Abstract: A conductive layer is formed beneath a runner in an integrated circuit. The conductive layer is also formed within vias. The conductive layer preserves electrical connection should the runner separate due, perhaps, to electromigration or stress voiding. The conductive layer also provides protection against various failures or defects which may occur in the runner material within the vias.

Abstract: An integrated circuit includes a doped polysilicon/silicide ("polycide") gate electrode. The doped polysilicon layer comprises sub-layers. The sub-layers are formed by varying the silicon deposition conditions, typically including the deposition rate, while decreasing the dopant concentration. The metal silicide layer is then formed on top of the doped polysilicon layer. An improvement in uniformity and planarity of the structure is obtained as a result of stress accommodation. In addition, the sub-layers reduce the channeling effect that occurs during high energy source/drain dopant implantation. These effects allow for a reduced stack height of the gate electrode, resulting in improvements in very small (sub-micron) device structures.

Abstract: A method of forming a transistor is disclosed. Conventional fabrication techniques direct an ion implantation beam toward a substrate upon which a gate has already been formed. If the gate stack is too low relative to the incident beam energy, the dopant species may channel thorugh the gate stack, adversely affecting transistor performance. The present invention prevents channeling through this gate by covering the gate with a protective layer before ion implantation.