Patents by Inventor Samuel E. Bradshaw

Samuel E. Bradshaw has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10831596
    Abstract: A first tier of error correcting code operations on a data block may be performed. The first tier of error correcting code operations on the data block may be determined to be associated with an unsuccessful correction of an error of the data block. Responsive to determining that the first tier of error correcting code operations on the data block are associated with the unsuccessful correction of the error of the data block, a remix operation on the data block to change a logical to physical association of the data block from a first logical association to a second logical association may be performed.
    Type: Grant
    Filed: January 22, 2018
    Date of Patent: November 10, 2020
    Assignee: Micron Technology, Inc.
    Inventor: Samuel E. Bradshaw
  • Patent number: 10810097
    Abstract: A technique of receiving a write transaction directed to a group of memory parcels of a memory device from a client source. The technique determines a state of a first indicator used to indicate which one of two data structures contains a newer mapping of the group of memory parcels, while the other data structure contains an older mapping of the group of memory parcels. The technique determines a state of a second indicator used to indicate which one of the two data structures is in current use for the group of memory parcels and compares the states of the two indicators. When a data structure in current use does not contain the newer mapping, the technique changes the state of the second indicator to the state of the first indicator. The technique writes content of the write transaction to storage locations based on the newer mapping.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: October 20, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Samuel E. Bradshaw, Justin Eno
  • Patent number: 10810119
    Abstract: A process for wear-leveling in a memory subsystem where references to invalidated chunks and a write count for each of the invalidated chunks of a memory subsystem are received by a wear-leveling manager. The wear-leveling manager orders the received references to the invalidated chunks of the memory subsystem in a tracking structure based on the write count of each of the invalidated chunks, and provides a reference to at least one of the invalidated chunks based on the ordering from the tracking structure to a write scheduler to service a write request, wherein the memory subsystem is wear-leveled by biasing the order of the invalidated chunks to prioritize low write count chunks.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: October 20, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Justin Eno, Samuel E. Bradshaw
  • Patent number: 10802907
    Abstract: A computer-implemented method for writing data to a first media using a set of data structures to reduce potential errors when reading the data from the first media is described. The method includes writing, user data to a set of memory cells in the first media; and storing, in response to writing the user data to the set of memory cells, a first set of parity bits associated with the user data in a first buffer that is held within a second media separate from the first media and is a different type than the first media, wherein the first set of parity bits provide error correction information for correcting errors introduced to the user data while stored in the set of memory cells or read from the set of memory cells.
    Type: Grant
    Filed: March 20, 2018
    Date of Patent: October 13, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventor: Samuel E. Bradshaw
  • Patent number: 10795810
    Abstract: A wear-leveling process for a memory subsystem selects a source chunk to be removed from a usable address space of the memory subsystem to distribute wear across all available chunks in the memory subsystem. The memory subsystem has a plurality of non-volatile memory components. The plurality of non-volatile memory components includes a plurality of chunks including at least one chunk in an unusable address space of the memory subsystem. The wear-leveling process copies valid data of the source chunk to a destination chunk in the unusable address space of the memory subsystem and assigns the destination chunk to a location in the usable address space of the memory subsystem occupied by the source chunk.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: October 6, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Samuel E. Bradshaw, Justin Eno
  • Patent number: 10761740
    Abstract: A method for performing wear leveling in a memory subsystem. The method includes adding, in response to a wear-leveling event, a migration association map entry to a migration association map to control copying of a first set of managed units from a first memory segment to a second set of managed units of a second memory segment, wherein adding the migration association map entry includes setting an exchange pointer of the migration association map entry to a value that references an unused managed unit in the first memory segment and copying the first set of managed units to the second set of managed units beginning with a managed unit in the first set of managed units following the managed unit referenced by the exchange pointer of the first segment metadata table entry.
    Type: Grant
    Filed: May 23, 2019
    Date of Patent: September 1, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Samuel E. Bradshaw, Justin Eno
  • Publication number: 20200251176
    Abstract: Exemplary methods, apparatuses, and systems include determining that data in a group of memory cells of a first memory device is to be moved to a spare group of memory cells. The group of memory cells spans a first dimension and a second dimension that is orthogonal to the first dimension and the spare group of memory cells also spans the first dimension and the second dimension. The data is read from the group of memory cells along the first dimension of the group of memory cells. The data is written to the spare group of memory cells along the second dimension of the spare group of memory cells.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Inventors: Samuel E. Bradshaw, Justin Eno
  • Publication number: 20200211645
    Abstract: An example method includes determining a time between writes in place to a particular memory cell, incrementing a disturb count corresponding to a neighboring memory cell by a particular count increment that is based on the time between the writes to the particular memory cell, and determining whether to check a write disturb status of the neighboring memory cell based on the incremented disturb count.
    Type: Application
    Filed: March 9, 2020
    Publication date: July 2, 2020
    Inventors: Edward C. McGlaughlin, Samuel E. Bradshaw
  • Publication number: 20200192750
    Abstract: Exemplary methods, apparatuses, and systems include a memory controller receiving a user payload to be written to a memory. The memory controller determines a plurality of locations within the memory within which the user payload will be written. After detecting the destination of the user payload, the memory controller detects, within a data structure, the presence of an identifier of a first location within a user data portion of the plurality of locations. The memory controller writes the user payload to the user data portion of the plurality of locations and, in response to detecting the presence of the identifier in the data structure, writes a copy of one or more bits in the user payload written to the first location to a spare data portion of the plurality of locations.
    Type: Application
    Filed: February 20, 2020
    Publication date: June 18, 2020
    Inventors: Samuel E. Bradshaw, Justin Eno, Sean Stephen Eilert, Sai krishna Mylavarapu
  • Patent number: 10665322
    Abstract: Remapping portions of a memory system having a plurality of non-volatile memory dice. A processing device performs a first error analysis of subslice elements to identify a first group of a predetermined number of subslice elements having highest error rates. The processing device determines which of the subslice elements are user subslice elements and remaps user subslice elements of the first group to spare subslice elements to remove subslice elements having the highest rates from a user space of the memory system. The processing device performs a second error analysis to identify a second group of subslice elements having the highest error rates and identifies user subslice elements of the first group that is/are not in the second group. For an identified user subslice element or elements of the first group not in the second group, the processing device reverses the remapping to reinstate removed subslice element(s) back into the user space.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: May 26, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Samuel E. Bradshaw, Justin Eno
  • Patent number: 10658067
    Abstract: Exemplary methods, apparatuses, and systems include a controller that determines that a group of memory cells of a first memory device has an elevated error rate. In response to determining the elevated error rate, the controller identifies a spare group of memory cells. The group of memory cells and the spare group of memory cells span a first dimension and a second dimension that is orthogonal to the first dimension. The controller reads a portion of a logical unit from the group of memory cells along the first dimension of the group. The controller further determines that the group of memory cells and the spare group of memory cells have strong disturb effects in different dimensions and, in response to that determination, writes the portion of the logical unit to the spare group of memory cells along the second dimension of the spare group.
    Type: Grant
    Filed: May 14, 2018
    Date of Patent: May 19, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Samuel E. Bradshaw, Justin Eno
  • Publication number: 20200142792
    Abstract: A technique of receiving a write transaction directed to a group of memory parcels of a memory device from a client source. The technique determines a state of a first indicator used to indicate which one of two data structures contains a newer mapping of the group of memory parcels, while the other data structure contains an older mapping of the group of memory parcels. The technique determines a state of a second indicator used to indicate which one of the two data structures is in current use for the group of memory parcels and compares the states of the two indicators. When a data structure in current use does not contain the newer mapping, the technique changes the state of the second indicator to the state of the first indicator. The technique writes content of the write transaction to storage locations based on the newer mapping.
    Type: Application
    Filed: November 7, 2018
    Publication date: May 7, 2020
    Inventors: Samuel E. Bradshaw, Justin Eno
  • Patent number: 10643719
    Abstract: A method is described, which includes reading first raw data from a set of memory cells at an indicated address and determining a number of errors in the first raw data. In response to determining that the number of errors is greater than a threshold, the set of memory cells are flagged for rereading. In response to flagging the set of memory cells for rereading, second raw data is read from the set of memory cells and a comparison is performed based on the first raw data and the second raw data to determine a number of non-read disturbance errors. In response to the comparison, the threshold is modified based on the number of non-read disturbance errors.
    Type: Grant
    Filed: September 4, 2018
    Date of Patent: May 5, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventor: Samuel E. Bradshaw
  • Patent number: 10613925
    Abstract: Exemplary methods, apparatuses, and systems include a memory controller receiving a user payload to be written to a memory. The memory controller determines a plurality of locations within the memory within which the user payload will be written. After detecting the destination of the user payload, the memory controller detects, within a data structure, the presence of an identifier of a first location within a user data portion of the plurality of locations. The memory controller writes the user payload to the user data portion of the plurality of locations and, in response to detecting the presence of the identifier in the data structure, writes a copy of one or more bits in the user payload written to the first location to a spare data portion of the plurality of locations.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: April 7, 2020
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Samuel E. Bradshaw, Justin Eno, Sean Stephen Eilert, Sai krishna Mylavarapu
  • Publication number: 20200097394
    Abstract: A process for wear-leveling in a memory subsystem where references to invalidated chunks and a write count for each of the invalidated chunks of a memory subsystem are received by a wear-leveling manager. The wear-leveling manager orders the received references to the invalidated chunks of the memory subsystem in a tracking structure based on the write count of each of the invalidated chunks, and provides a reference to at least one of the invalidated chunks based on the ordering from the tracking structure to a write scheduler to service a write request, wherein the memory subsystem is wear-leveled by biasing the order of the invalidated chunks to prioritize low write count chunks.
    Type: Application
    Filed: September 21, 2018
    Publication date: March 26, 2020
    Inventors: Justin ENO, Samuel E. BRADSHAW
  • Publication number: 20200081829
    Abstract: A wear-leveling process for a memory subsystem selects a source chunk to be removed from a usable address space of the memory subsystem to distribute wear across all available chunks in the memory subsystem. The memory subsystem has a plurality of non-volatile memory components. The plurality of non-volatile memory components includes a plurality of chunks including at least one chunk in an unusable address space of the memory subsystem. The wear-leveling process copies valid data of the source chunk to a destination chunk in the unusable address space of the memory subsystem and assigns the destination chunk to a location in the usable address space of the memory subsystem occupied by the source chunk.
    Type: Application
    Filed: September 10, 2018
    Publication date: March 12, 2020
    Inventors: Samuel E. BRADSHAW, Justin ENO
  • Patent number: 10586592
    Abstract: An example method includes determining a time between writes in place to a particular memory cell, incrementing a disturb count corresponding to a neighboring memory cell by a particular count increment that is based on the time between the writes to the particular memory cell, and determining whether to check a write disturb status of the neighboring memory cell based on the incremented disturb count.
    Type: Grant
    Filed: August 23, 2018
    Date of Patent: March 10, 2020
    Assignee: Micron Technology, Inc.
    Inventors: Edward C. McGlaughlin, Samuel E. Bradshaw
  • Publication number: 20200075109
    Abstract: A method is described, which includes reading first raw data from a set of memory cells at an indicated address and determining a number of errors in the first raw data. In response to determining that the number of errors is greater than a threshold, the set of memory cells are flagged for rereading. In response to flagging the set of memory cells for rereading, second raw data is read from the set of memory cells and a comparison is performed based on the first raw data and the second raw data to determine a number of non-read disturbance errors. In response to the comparison, the threshold is modified based on the number of non-read disturbance errors.
    Type: Application
    Filed: September 4, 2018
    Publication date: March 5, 2020
    Inventor: Samuel E. Bradshaw
  • Publication number: 20200066360
    Abstract: A group of sectors of a memory is provisioned for a logical volume such that an unprovisioned capacity of the memory interleaves at least a subset of the group of sectors to provide proximity disturb isolation. A request to access the memory is received, the request including a logical address within the logical volume. A sector within the group of sectors is identified, the sector corresponding to the logical address, and the requested access is performed in the sector within the group of sectors.
    Type: Application
    Filed: August 21, 2018
    Publication date: February 27, 2020
    Inventors: Justin ENO, Samuel E. BRADSHAW
  • Publication number: 20200066341
    Abstract: An example method includes determining a time between writes in place to a particular memory cell, incrementing a disturb count corresponding to a neighboring memory cell by a particular count increment that is based on the time between the writes to the particular memory cell, and determining whether to check a write disturb status of the neighboring memory cell based on the incremented disturb count.
    Type: Application
    Filed: August 23, 2018
    Publication date: February 27, 2020
    Inventors: Edward C. McGlaughlin, Samuel E. Bradshaw