Abstract: According to a preferred aspect of this invention, locations of defects on a semiconductor wafer are found using semiconductor defect inspection instrumentation. Defect composition can also be determined using inspection instrumentation. Wafer defects are represented on a wafer defect map using markings wherein locations of the markings on the map correspond to the locations of the defects on the wafer. The markings also preferably represent a defect type and/or composition. Color-coded dots, for instance, can be used to represent like defect causes or types with like colors. Graphs can be prepared to display defect characteristics using distributions and skews to facilitate quick statistical analysis of the defects. In this manner, wafer defects can be analyzed quickly and efficiently based on characteristics thereof, including, for example, defect type, composition, and cause. This information can be used to help prevent future defects during mass production, thereby improving yield.

Abstract: Methods of manufacturing a semiconductor integrated circuit using selective disposable spacer technology and semiconductor integrated circuits manufactured thereby: The method includes forming a plurality of gate patterns on a semiconductor substrate. Gap regions between the gate patterns include first spaces having a first width and second spaces having a second width greater than the first width. Spacers are formed on sidewalls of the second spaces, and spacer layer patterns filling the first spaces are also formed together with the spacers. The spacers are selectively removed to expose the sidewalls of the first spaces. As a result, the semiconductor integrated circuit includes wide spaces enlarged by the removal of the spacers and narrow and deep spaces filled with the spacer layer patterns.

Abstract: Methods of manufacturing a semiconductor integrated circuit using selective disposable spacer technology and semiconductor integrated circuits manufactured thereby: The method includes forming a plurality of gate patterns on a semiconductor substrate. Gap regions between the gate patterns include first spaces having a first width and second spaces having a second width greater than the first width. Spacers are formed on sidewalls of the second spaces, and spacer layer patterns filling the first spaces are also formed together with the spacers. The spacers are selectively removed to expose the sidewalls of the first spaces. As a result, the semiconductor integrated circuit includes wide spaces enlarged by the removal of the spacers and narrow and deep spaces filled with the spacer layer patterns.

Abstract: An apparatus rotates a sample to facilitate an accurate analysis of the sample. The apparatus includes a sample stage on which a plurality of samples are supported, a rotatable cap and a linearly movable plate for placing a selected one of the samples at an analysis position, and a rotating stage that supports the sample stage, rotatable cap and movable plate. The rotating stage is rotatable about an axis of rotation that intersects the analysis position. Once the selected sample is placed at the analysis position by the rotation of the cap and the linear movement of the plate, the selected sample is rotated by the rotating stage. The analysis process can be selectively or sequentially carried out with respect to the plurality of samples with a high degree of efficiency and without the associated drive mechanisms experiencing high loads.

Abstract: Methods of manufacturing a semiconductor integrated circuit using selective disposable spacer technology and semiconductor integrated circuits manufactured thereby: The method includes forming a plurality of gate patterns on a semiconductor substrate. Gap regions between the gate patterns include first spaces having a first width and second spaces having a second width greater than the first width. Spacers are formed on sidewalls of the second spaces, and spacer layer patterns filling the first spaces are also formed together with the spacers. The spacers are selectively removed to expose the sidewalls of the first spaces. As a result, the semiconductor integrated circuit includes wide spaces enlarged by the removal of the spacers and narrow and deep spaces filled with the spacer layer patterns.

Abstract: An apparatus rotates a sample to facilitate an accurate analysis of the sample. The apparatus includes a sample stage on which a plurality of samples are supported, a rotatable cap and a linearly movable plate for placing a selected one of the samples at an analysis position, and a rotating stage that supports the sample stage, rotatable cap and movable plate. The rotating stage is rotatable about an axis of rotation that intersects the analysis position. Once the selected sample is placed at the analysis position by the rotation of the cap and the linear movement of the plate, the selected sample is rotated by the rotating stage. The analysis process can be selectively or sequentially carried out with respect to the plurality of samples with a high degree of efficiency and without the associated drive mechanisms experiencing high loads.

Abstract: Disclosed is a method for detecting nucleic acid hybridization by using intercalator binding to hybridized nucleic acid, wherein oxidation-reduction of transition metallic complex is induced to cause electrochemiluminescence, thereby providing a method for detecting nucleic acid hybridization without a special labeling.

Abstract: According to a preferred aspect of this invention, locations of defects on a semiconductor wafer are found using semiconductor defect inspection instrumentation. Defect composition can also be determined using inspection instrumentation. Wafer defects are represented on a wafer defect map using markings wherein locations of the markings on the map correspond to the locations of the defects on the wafer. The markings also preferably represent a defect type and/or composition. Color-coded dots, for instance, can be used to represent like defect causes or types with like colors. Graphs can be prepared to display defect characteristics using distributions and skews to facilitate quick statistical analysis of the defects. In this manner, wafer defects can be analyzed quickly and efficiently based on characteristics thereof, including, for example, defect type, composition, and cause. This information can be used to help prevent future defects during mass production, thereby improving yield.

Abstract: Method and device for detecting DNA by using electrochemiluminescence, wherein a probe DNA is immobilized on a chip, a target DNA is placed on the chip having the probe DNA immobilized thereon, for hybridization of the probe DNA and the target DNA, and an intercalator is fixed to the hybridized DNA. Then, an electrochemiluminescent reaction fluid is introduced into the chip having the DNA with a fixed intercalator, a preset voltage is applied to the chip for causing reaction between the intercalator and the electrochemiluminescent reaction fluid, and a light from the reaction is detected, and analyzed, whereby making a DNA detection process fast and simple, and a system of the device for detecting a DNA simple, to permit a device price low, and the DNA detection accurate.

Abstract: A process and a set of equipment for reactivating spent activated carbon onto which pollutants were adsorbed. The present process comprises subjecting the activated carbon to be reactivated in a mixed solution consisting of ethanol, sodium hydroxide solution and water to effectuate the desorption of the pollutants adsorbed on the activated carbon. The equipment includes (A) a mixing tank for mixing given amounts of water, ethanol and sodium hydroxide solution which are supplied from the respective receptacles thereof; (B) a reactivation reactor for receiving the mixed solution from the mixing tank and subjecting the spent activated carbon filled therein to the mixed solution to effect the desorption of the pollutants adsorbed on the spent activated carbon, wherein the reactivation reactor includes a unit for regulating temperature of the mixed solution; and (C) a storage tank for receiving the reactivated carbon.

Abstract: A process and a set of equipment for reactivating spent activated carbon onto which pollutants were adsorbed, are invented. The present process comprises subjecting the activated carbon to be reactivated in a mixed solution consisting of ethanol, sodium hydroxide solution and water to effectuate the desorption of the pollutants adsorbed on the activated carbon. The present equipment comprises (A) a mixing tank for mixing given amounts of water, ethanol and sodium hydroxide solution which are supplied from the respective receptacles thereof; (B) a reactivation reactor for receiving the mixed solution from the mixing tank and subjecting the spent activated carbon filled therein to the mixed solution to effect the desorption of the pollutants adsorbed on the spent activated carbon, wherein the reactivation reactor being provided with a means for regulating temperature of the mixed solution; and (C) a storage tank for receiving the reactivated carbon.

Abstract: A method of forming a contact structure in a semiconductor device is provided. In this method, a semiconductor layer, an ohmic metal layer, and a barrier metal layer are formed on the surface of a semiconductor substrate on which a metal contact hole has been formed. A compound material layer having a uniform thickness is formed on the bottom, sidewalls and lower corners of the contact hole by thermally reacting the semiconductor layer with the ohmic metal layer. Accordingly, when the contact hole exposes an impurity layer and portions of an isolation layer adjacent to the impurity layer, the junction leakage current characteristics of the impurity layer and a contact resistance are improved.

Abstract: A quantitative and qualitative analysis of a nitrogen (N) kinetic energy peak in a spectrum of a titanium nitride (TiN) film using Auger Electron Spectroscopy (AES). The N kinetic energy peak analysis is used to set the base energy level of the AES, and is achieved by selecting a kinetic energy of an N peak which does not overlap with the Ti kinetic energy peak.