Abstract: The electronic device includes a housing, a substrate disposed in an interior of the housing, an electronic element mounted on the substrate, a first cooling member in contact with the electronic element and configured to absorb heat generated by the electronic element, and a second cooling member spaced apart from the electronic element and configured to circulate air into and out of the housing.

Abstract: Disclosed is a motion amplification device including: an encoder receiving a first frame and a second frame arbitrarily adjacent in an image, and decomposing the first frame into first shape information and first texture information and decomposing the second frame into second shape information and second texture information; a first module generating a third frame in which a motion of an object is amplified based on the first shape information, the second shape information, and the second texture information; a second module analyzing an intensity of the motion based on the first shape information, the second shape information, and the first texture information; and a third module generating amplification image data indicating the intensity of the motion on the third frame.

Abstract: A battery pack with has improved safety. The battery pack includes a plurality of battery modules having at least one battery cell and provided in plurality to be arranged side by side with each other so that a predetermined gap is formed between facing battery modules.

Abstract: A sensor shifting actuator includes a fixed body; a moving body disposed in the fixed body and including an image sensor having an imaging surface; a supporting substrate disposed in the fixed body and configured to support the moving body so that the moving body is movable with respect to the fixed body in first and second directions parallel to the imaging surface of the image sensor; and a driver configured to move the moving body in either one or both of the first and second directions. The supporting substrate includes a movable portion coupled to the moving body, a fixed portion coupled to the fixed body, and a connection portion disposed between the movable portion and the fixed portion. The movable portion and the connection portion are movable together in the first direction, and the movable portion is movable with respect to the connection portion in the second direction.

Abstract: A spectroscopic analysis method having improved accuracy and correlation, a method for fabricating a semiconductor device using the same, and a substrate process system using the same are provided. The spectroscopic analysis method includes receiving plasma light emitted from plasma to generate an emission spectrum, detecting n (here, n is a natural number of 2 or more) peak wavelengths from the emission spectrum, generating a plurality of correlation factor time series from correlation factors between the peak wavelengths, filtering the plurality of correlation factor time series, and analyzing the plasma, using the filtered correlation factor time series.

Abstract: A multilayer electronic component according to an example embodiment may include: a body including a plurality of dielectric layers, a first internal electrode, a second internal electrode, and a margin pattern; and an external electrode disposed on the body. The first and second internal electrodes may be alternately disposed in a first direction with the dielectric layer interposed therebetween, and the margin pattern may be disposed in a position different from the first and second internal electrodes in the first direction and may be disposed so as not to overlap the first internal electrode or the second internal electrode in the first direction.

Abstract: A lens includes a light-transmitting portion and a light-shielding portion adjacent to at least a portion of the light-transmitting portion and integrated with the light-transmitting portion. The light-shielding portion includes at least one of carbon nanotubes and carbon black.

Abstract: Disclosed are an ionic liquid, an electrolyte including the ionic liquid, and a lithium secondary battery including the same. The ionic liquid is capable of forming a film having high ionic conductivity on an anode upon reductive decomposition of cations contained therein, and delaying the decomposition of anions.

Abstract: The subject matter of this specification can be embodied in, among other things, a graphene plasmon resonator that includes a planar patterned layer having a collection of electrically conductive segments, and a collection of dielectric segments, each dielectric segment defined between a corresponding pair of the electrically conductive segments, a graphene layer substantially parallel to the planar patterned layer and overlapping the collection of electrically conductive segments, and a planar dielectric layer between the planar patterned layer and the graphene layer.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: This document relates to methods and materials for detecting the presence or absence of misfolded polypeptides in a sample. For example, methods and materials for amplifying a sample (e.g., a biological sample or an environmental sample) such that misfolded polypeptides present in the sample can aggregate to form fibrils and/or globular polypeptide aggregates and contacting the amplified sample with a solution containing metal nanoparticles (e.g., gold nanoparticles) or one or more organic dyes (e.g., Congo Red) to detect the presence or absence of fibrils and/or globular polypeptide aggregates are provided. In some cases, methods and materials for determining if a mammal (e.g., a human) has a proteinopathy based, at least in part, in the presence or absence of misfolded polypeptides in a sample obtained from the mammal are provided.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: The subject matter of this specification can be embodied in, among other things, a graphene plasmon resonator that includes a planar patterned layer having a collection of electrically conductive segments, and a collection of dielectric segments, each dielectric segment defined between a corresponding pair of the electrically conductive segments, a graphene layer substantially parallel to the planar patterned layer and overlapping the collection of electrically conductive segments, and a planar dielectric layer between the planar patterned layer and the graphene layer.

Abstract: A wireless circuit including an electrode array with a nanoscale dielectric disposed between two electrodes allows for wirelessly powered manipulation of particles in a liquid solution, air, or gaseous media via dielectrophoretic forces. The electrode array includes a first electrode, a second electrode, and a nanoscale dielectric layer between the first and second electrode. An inductive coupler is operatively coupled to the electrode array and configured to receive wireless power or wireless signals.

Abstract: Devices, systems, and methods for applying a dielectrophoretic force on a particle include: a cell defining at least one channel for confining the particle; and a first electrode and a second electrode electrically isolated from the first electrode, at least one of the first and second electrodes being formed from a two-dimensional (2D) material providing an atomically sharp edge. The first and second electrodes are arranged sufficiently close to one another and sufficiently close to the channel such that application of a sufficient voltage across the first and second electrodes generates an electric field in at least part of the channel, the electric field having an electric field gradient sufficient to apply the dielectrophoretic force on the particle in the channel.

Abstract: The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face of the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.

Abstract: A microfluidic device includes a bottom electrode, a dielectric layer on the bottom electrode, one or more top electrodes on a region of the dielectric layer, Each of the one or more top electrodes has a sidewall that forms a sidewall angle with an outer surface of the dielectric layer that is less than 180 degrees. The sidewall of each of the one or more top electrodes and a portion of the outer surface of the dielectric layer adjacent to the sidewall define a microchannel region for transporting an open microchannel of a fluid. Such microfluidic devices may enable transport of small microchannels using low voltages.