Abstract: A wireless circuit including an electrode array with a nanoscale dielectric disposed between two electrodes allows for wirelessly powered manipulation of particles in a liquid solution, air, or gaseous media via dielectrophoretic forces. The electrode array includes a first electrode, a second electrode, and a nanoscale dielectric layer between the first and second electrode. An inductive coupler is operatively coupled to the electrode array and configured to receive wireless power or wireless signals.

Abstract: Devices, systems, and methods for applying a dielectrophoretic force on a particle include: a cell defining at least one channel for confining the particle; and a first electrode and a second electrode electrically isolated from the first electrode, at least one of the first and second electrodes being formed from a two-dimensional (2D) material providing an atomically sharp edge. The first and second electrodes are arranged sufficiently close to one another and sufficiently close to the channel such that application of a sufficient voltage across the first and second electrodes generates an electric field in at least part of the channel, the electric field having an electric field gradient sufficient to apply the dielectrophoretic force on the particle in the channel.

Abstract: The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face of the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.

Abstract: A microfluidic device includes a bottom electrode, a dielectric layer on the bottom electrode, one or more top electrodes on a region of the dielectric layer, Each of the one or more top electrodes has a sidewall that forms a sidewall angle with an outer surface of the dielectric layer that is less than 180 degrees. The sidewall of each of the one or more top electrodes and a portion of the outer surface of the dielectric layer adjacent to the sidewall define a microchannel region for transporting an open microchannel of a fluid. Such microfluidic devices may enable transport of small microchannels using low voltages.

Abstract: A variable impeller for a pump is proposed. The variable impeller includes a hub to which a shaft is mounted, a plurality of vanes radially arranged around the hub outward from the hub, and extension wings tightly locked to the plurality of vanes and extending length of each of the vanes. The length of the vane is adjusted in response to the pumping head that is changed by a flow rate of fluid, the pump is operated within a high efficiency section, an expensive impeller rotation speed control device is not required, and energy is reduced by reducing power consumption of the pump. In addition, during the work of changing the pumping head, the replacement of the extension wings may be quickly completed while only a part of a pump housing is opened to expose only the impeller without separating the entire assembly of the impeller from the pump.

Abstract: A dielectrophoretic (DEP) sensor includes a graphene electrode adjacent a channel for confining a target particle in a liquid, a surface probe attached to a surface of the graphene electrode, the surface probe having a selective reaction with the target particle, and a voltage source electrically connected to the graphene electrode and configured to apply a voltage to the graphene electrode to cause DEP trapping of the target particle at the graphene electrode.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.

Abstract: Devices, systems, and methods for applying a dielectrophoretic force on a particle include: a cell defining at least one channel for confining the particle; and a first electrode and a second electrode electrically isolated from the first electrode, at least one of the first and second electrodes being formed from a two-dimensional (2D) material providing an atomically sharp edge. The first and second electrodes are arranged sufficiently close to one another and sufficiently close to the channel such that application of a sufficient voltage across the first and second electrodes generates an electric field in at least part of the channel, the electric field having an electric field gradient sufficient to apply the dielectrophoretic force on the particle in the channel.

Abstract: A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.

Abstract: The subject matter of this specification can be embodied in, among other things, a photodetector that includes a semiconductor substrate, a semiconductor annulus on a planar face the semiconductor substrate, and a metal layer on the semiconductor substrate, wherein the metal layer comprises a first region surrounding the semiconductor annulus and comprises a second region filling an interior region to the semiconductor annulus, and the metal layer in the first region forms a Schottky junction with the semiconductor ring.

Abstract: Devices, systems, and methods for applying a dielectrophoretic force on a particle include: a cell defining at least one channel for confining the particle; and a first electrode and a second electrode electrically isolated from the first electrode, at least one of the first and second electrodes being formed from a two-dimensional (2D) material providing an atomically sharp edge. The first and second electrodes are arranged sufficiently close to one another and sufficiently close to the channel such that application of a sufficient voltage across the first and second electrodes generates an electric field in at least part of the channel, the electric field having an electric field gradient sufficient to apply the dielectrophoretic force on the particle in the channel.

Abstract: The subject matter of this specification can be embodied in, among other things, a graphene plasmon resonator that includes a planar patterned layer having a collection of electrically conductive segments, and a collection of dielectric segments, each dielectric segment defined between a corresponding pair of the electrically conductive segments, a graphene layer substantially parallel to the planar patterned layer and overlapping the collection of electrically conductive segments, and a planar dielectric layer between the planar patterned layer and the graphene layer.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.

Abstract: A light-emitting element according to an embodiment of the present document has a transparent electrode having an opening, and the transparent electrode has a protrusion on a side surface of the opening. A second electrode pad is arranged on the opening of the transparent electrode, and abuts the protrusion. Accordingly, peeling of the second electrode pad can be prevented, thereby improving the reliability of the light-emitting element.

Abstract: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract: A hybrid drying apparatus including: a bed portion having a horizontally disposed top surface; an object-to-be-dried supplying portion configured to spread an object to be dried on the top surface of the bed portion; and a driving unit configured to rotate and drive the bed portion or the object-to-be-dried supplying portion, wherein the object to be dried supplied from the object-to-be-dried supplying portion is spread on the top surface of the bed portion while the bed portion or the object-to-be-dried supplying portion is rotated, and the top surface of the bed portion is heated in such a manner that a lower portion of the bed portion is primarily heated so that the bed portion is used to dry the object to be dried coated on the top surface of the bed portion by the object-to-be-dried supplying portion.

Abstract: A semiconductor device includes: a first stack structure; a second stack structure adjacent to the first stack structure in a first direction; a first insulating layer including protrusion parts protruding in a second direction intersecting the first direction and including a concave part defined between the protrusion parts; and a second insulating layer located between the first stack structure and the second stack structure, the second insulating layer inserted into the concave part and the second insulating layer in contact with at least one protrusion part among the protrusion parts.