Abstract: Embodiments of the present invention are directed to a semiconductor package with full plating on contact side surfaces. The semiconductor package includes a top surface, a bottom surface opposite the top surface, and side surfaces between the top and bottom surfaces. Contacts are located on peripheral edges of the bottom surface. Each of the contacts includes a first surface that is flush with the bottom surface and a second surface that is at one of the side surfaces. The first surface and the second surface of each of the contacts are continuously plated. Portions of an internal plating layer are exposed along the side surfaces of the semiconductor package. The semiconductor package has a molding compound at least partially encapsulating the contacts, wherein the surface of a first part of the molding compound and the surface of a second part of the molding compound have different surface texture.

Abstract: Embodiments of the present invention relate to a semiconductor package with a metal-plated shield. Surfaces of molding compound are roughened by an abrasion process such that the surfaces have an unnatural surface roughness that is rougher than a natural surface roughness. The roughened surfaces provide better adhesion of the metal-plated shield to the roughened surfaces than to untreated surfaces (e.g., surfaces with the natural surface roughness). A catalyst material can be deposited on the roughened surfaces of the molding compound before a metal layer is coated on the roughened surfaces of the molding compound to speed up the time for the metal layer to adhere to the roughened surfaces of the molding compound. The metal-plated shield can include plurality of metal layers plated on top of each other.

Abstract: Embodiments of the present invention are directed to a semiconductor package with improved thermal performance. The semiconductor package includes a package substrate comprising a top substrate surface and a bottom substrate surface. The package substrate comprises a thickness extending from the top substrate surface to the bottom substrate surface. A heat spreader is disposed on the top substrate surface. The heat spreader comprises a thickness extending from a top planar surface to a bottom planar surface of the heat spreader. The top planar surface of the heat spreader is defined with a die region and a non-die region surrounding the die region. A semiconductor die is directly disposed on the top planar surface of the heat spreader in the die region. The thickness of the heat spreader is greater relative to the thickness of the package substrate.

Abstract: Embodiments of the present invention are directed to a semiconductor package with partial plating on contact surfaces. The semiconductor package includes a top surface, a bottom surface that is opposite the top surface, and side surfaces between the top surface and the bottom surface. Each of the side surfaces includes a step such that the area of the bottom surface is smaller than the area of the top surface. The semiconductor package includes a plurality of contacts that is located at peripheral edges of the bottom surface. Each of the plurality of contacts includes a first surface that is flush with the bottom surface, a second surface that is flush with one of the side surfaces, and a curved surface located at a corresponding step. In some embodiments, the first surface and the curved surface are plated, while the second surface is exposed (not plated).

Abstract: An improved method for forming a semiconductor package is disclosed herein. The method includes forming a multi-layer package substrate having a first major surface and a second major surface opposite to the first major surface. The package substrate comprises a recess region. A semiconductor die is attached to the die region within the recess region. A dam structure is formed within the recess region. The dam structure surrounds the semiconductor die and extends upward to a height below the first major surface of the package substrate. A liquid encapsulant material is dispensed into the recess region. The liquid encapsulant material is surrounded by the dam structure. The liquid encapsulant extends upwardly to a height below the height of the dam structure. A package lid is attached to the package substrate.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using a laser to activate areas of each molding compound layer of the semiconductor package. Each compound filler in the molding compound layer has a metal interior and an insulating outermost shell. The activated molding compound areas in the molding compound layer become metallized in an electroless plating solution to build conductive paths on the molding compound surface, while properties of non-activated molding compound areas are not changed.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using an inkjet process to create conductive paths on each molding compound layer of the semiconductor package.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is fondled from multiple molding routing layers in a leadframe land grid array semiconductor package by using a laser to blast away un-designed conductive areas to create conductive paths on each molding compound layer of the semiconductor package.

Abstract: A semiconductor package includes terminals, each having an exposed surface that is flush with a bottom surface of the semiconductor package, and a layer of interconnection routings disposed within the semiconductor package. At least one interconnection routing is electrically coupled with a terminal and extends planarly therefrom. The semiconductor package also includes at least one die coupled with the layer of interconnection routings. In some embodiments, the semiconductor package also includes one or more additional intermediary layers. Each intermediary layer includes a via layer and an associated routing layer. The associated routing layer includes associated routings. At least one associated routing is electrically coupled with a terminal and extends planarly therefrom. Each via layer couples two routing layers. The semiconductor package also includes a locking mechanism for fastening a package compound with the interconnection routings and the terminals.

Abstract: A process for forming a semiconductor package. The process comprises forming a first leadframe strip mounted upon an adhesive tape. The first leadframe strip is at least partially encased in a first mold compound thereby forming a molded leadframe strip. At least one flip chip semiconductor device is mounted on the molded leadframe strip. The semiconductor device has conductive masses attached thereon to effectuate electrical contact between the semiconductor device and the molded leadframe. The conductive masses can be substantially spherical or cylindrical. Liquid encapsulant is dispensed on the semiconductor device to encapsulate the flip chip semiconductor device. A cavity is formed between the semiconductor device and the molded leadframe. The molded leadframe strip, the semiconductor device, and the conductive masses are at least partially encased in a second mold compound.

Abstract: A semiconductor package includes terminals, each having an exposed surface that is flush with a bottom surface of the semiconductor package, and a layer of interconnection routings disposed within the semiconductor package. At least one interconnection routing is electrically coupled with a terminal and extends planarly therefrom. The semiconductor package also includes at least one die coupled with the layer of interconnection routings. In some embodiments, the semiconductor package also includes one or more additional intermediary layers. Each intermediary layer includes a via layer and an associated routing layer. The associated routing layer includes associated routings. At least one associated routing is electrically coupled with a terminal and extends planarly therefrom. Each via layer couples two routing layers. The semiconductor package also includes a locking mechanism for fastening a package compound with the interconnection routings and the terminals.

Abstract: A semiconductor package includes terminals, each having an exposed surface that is flush with a bottom surface of the semiconductor package, and a layer of interconnection routings disposed within the semiconductor package. At least one interconnection routing is electrically coupled with a terminal and extends planarly therefrom. The semiconductor package also includes at least one die coupled with the layer of interconnection routings. In some embodiments, the semiconductor package also includes one or more additional intermediary layers. Each intermediary layer includes a via layer and an associated routing layer. The associated routing layer includes associated routings. At least one associated routing is electrically coupled with a terminal and extends planarly therefrom. Each via layer couples two routing layers. The semiconductor package also includes a locking mechanism for fastening a package compound with the interconnection routings and the terminals.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using a laser to activate areas of each molding compound layer of the semiconductor package. Each compound filler in the molding compound layer has a metal interior and an insulating outermost shell. The activated molding compound areas in the molding compound layer become metallized in an electroless plating solution to build conductive paths on the molding compound surface, while properties of non-activated molding compound areas are not changed.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using a laser to blast away un-designed conductive areas to create conductive paths on each molding compound layer of the semiconductor package.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a leadframe land grid array semiconductor package by using a laser to blast away un-designed conductive areas to create conductive paths on each molding compound layer of the semiconductor package.

Abstract: A process for forming land grid array semiconductor packages includes a leadframe that is supported by a substrate comprising mold compound. In some embodiments, at least one die is electrically coupled to the leadframe by bondwires. The package comprises a second mold compound to act as an encapsulant. An apparatus for forming a land grid array semiconductor package includes means for molding a leadframe, assembling thereon at least one semiconductor device, applying a second mold, and singulating to form individual devices. A land grid array package comprises a leadframe, a substrate for supporting the leadframe, at least one semiconductor device and a mold compound.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using a laser to activate areas of each molding compound layer of the semiconductor package. Each compound filler in the molding compound layer has a metal interior and an insulating outermost shell. The activated molding compound areas in the molding compound layer become metallized in an electroless plating solution to build conductive paths on the molding compound surface, while properties of non-activated molding compound areas are not changed.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using a laser to blast away un-designed conductive areas to create conductive paths on each molding compound layer of the semiconductor package.

Abstract: Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using an inkjet process to create conductive paths on each molding compound layer of the semiconductor package.

Abstract: A method of singulating semiconductor packages, the method comprising: providing a plurality of semiconductor dies coupled to a single common leadframe, wherein a molding compound at least partially encases the semiconductor dies and the leadframe; singulating the plurality of semiconductor dies, wherein the leadframe is at least partially cut between adjacent semiconductor dies, thereby forming exposed side surfaces on leads of the leadframe; and plating the exposed side surfaces of the leads with a plating material, wherein the plating material is a different material than the leads. In some embodiments, singulating the plurality of semiconductor dies comprises performing a full cut of the leadframe. In some embodiments, singulating the plurality of semiconductor dies comprises performing separate partial cuts of the leadframe.