Abstract: This disclosure concerns a memory including memory cell arrays including word lines extending in a first direction, bit lines extending in a second direction crossing the first direction, and memory cells provided to respectively correspond to cross-points in form of a lattice constituted by the word lines and the bit lines; sense amplifiers provided to respectively correspond to the bit lines and reading data stored in the memory cells; and bit line drivers provided to the bit lines and operating the bit lines when data is written to the memory cells, wherein the bit line drivers access the memory cells adjacent to a first memory cell diagonally with respect to the form of the lattice for writing the data to the adjacent memory cells during a data write operation without changing data stored in the memory cells adjacent to the first memory cell in the first and the second directions.

Abstract: Plural memory cell arrays laminated on the semiconductor substrate each includes a plurality of first wirings and second wirings formed to intersect with each other. The control circuit provides, in a non-selected second memory cell array that shares the first wiring with a selected first memory cell array, and a non-selected third memory cell array located more distant from the first memory cell array than the second memory cell array, the first potential to all of the first wirings and all of the second wirings. It also provides, in a non-selected fourth memory cell array that shares the second wiring with the first memory cell array and a non-selected fifth memory cell array located more distant from the first memory cell array than the fourth memory cell array, the second potential to all of the first wirings and all of the second wirings.

Abstract: A semiconductor storage device includes: a memory cell array having memory cells; and a control circuit configured to apply a first voltage to a selected one of first wirings as well as a second voltage to a selected one of second wirings. The control circuit includes: a signal output circuit configured to output a first signal based on a first current flowing through a selected memory cell and a reference current; and a current retaining circuit configured to retain a second current flowing through the first wirings or a wiring electrically connected to the first wirings during a certain period of time. The signal output circuit is configured to determine the first current based on the second current retained by the current retaining circuit. The control circuit is configured to stop application of the first voltage to the first wirings based on the first signal.

Abstract: A semiconduct or memory device comprises a memory cell array including a plurality of memory cells arranged at intersections of word lines and bit lines; a read/write circuit operative to execute data read/write to the memory cell; and an operational circuit operative to compare certain length data read out by the read/write circuit from plural ones of the memory cells with certain length data to be written in the plural memory cells to make a decision, and create a flag representing the decision result. The read/write circuit inverts each bit in the certain length data to be written in the memory cells in accordance with the flag, and writes only rewrite-intended data of the certain length data and the flag. The read/write circuit reads the certain length data together with the flag corresponding thereto, and inverts each bit in the certain length data in accordance with the flag.

Abstract: Systems and methods for reducing the latency of data transfers between memory cells by enabling data to be transferred directly between sense amplifiers in the memory system. In one embodiment, a memory system uses a conventional DRAM memory structure having a pair of first-level sense amplifiers, a second-level sense amplifier and control logic for the sense amplifiers. Each of the sense amplifiers is configured to be selectively coupled to a data line. In a direct data transfer mode, the control logic generates control signals that cause the sense amplifiers to transfer data from a first one of the first-level sense amplifiers (a source sense amplifier) to the second-level sense amplifier, and from there to a second one of the first-level sense amplifiers (a destination sense amplifier.) The structure of these sense amplifiers is conventional, and the operation of the system is enabled by modified control logic.

Abstract: Systems and methods for reducing instability and writability problems arising from relative variations between voltages at which memory cells and logic components that access the memory cells operate by inhibiting memory accesses when the voltages are not within an acceptable operating range. One embodiment comprises a pipelined processor having logic components which receive power at a first voltage and a set of SRAM cells which receive power at a second voltage. A critical condition detector is configured to monitor the first and second voltages and to determine whether the ratio of these voltages is within an acceptable range. When the voltages are not within the acceptable range, an exception is generated, and an exception handler stalls the processor pipeline to inhibit accesses to the SRAM cells. When the voltages return to the acceptable range, the exception handler resumes the pipeline and completes handling of the exception.

Abstract: This disclosure concerns a memory including: word lines extending to a first direction; bit lines extending to a second direction crossing the first direction; a memory cell array including cell blocks each including memory cells respectively provided corresponding to intersection points of the word lines and the bit lines; and sense amplifiers provided corresponding to the bit lines, wherein the sense amplifiers copies existing data stored in a first cell block within the memory cell array to a plurality of memory cells, the memory cells being included in second and third cell blocks different from the first cell block, and alternately arranged in an extension direction of the word lines and also alternately arranged in an extension direction of the bit lines, and the sense amplifiers reads data from the second cell block or the third cell block, at a time of outputting data to outside of the sense amplifiers.

Abstract: A resistance change memory device including: a cell array having a resistance change type of memory cells disposed at the cross-points of word lines and bit lines, the resistance value of the memory cell being reversibly settable; a word line driver circuit configured to apply a selecting drive voltage to one selected in the word lines; and a bit line driver circuit configured to drive multiple bit lines in such a manner that a set mode and a reset mode are set simultaneously for multiple memory cells selected by the selected word line, the set mode being for changing a selected memory cell from a first resistance state into a second resistance state while the reset mode is for changing a selected memory cell from the second resistance state into the first resistance state.

Abstract: A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R0, R1 and R2 (R0<R1<R2) are selectively set, wherein resistance gaps ?R1(=R1?R0) and ?R2(=R2?R1) are set to satisfy the relationship of ?R1>?R2.

Abstract: This disclosure concerns a memory including memory cell arrays including word lines extending in a first direction, bit lines extending in a second direction crossing the first direction, and memory cells provided to respectively correspond to cross-points in form of a lattice constituted by the word lines and the bit lines; sense amplifiers provided to respectively correspond to the bit lines and reading data stored in the memory cells; and bit line drivers provided to the bit lines and operating the bit lines when data is written to the memory cells, wherein the bit line drivers access the memory cells adjacent to a first memory cell diagonally with respect to the form of the lattice for writing the data to the adjacent memory cells during a data write operation without changing data stored in the memory cells adjacent to the first memory cell in the first and the second directions.

Abstract: Systems and methods for reducing instability and writability problems arising from relative variations between a memory cell voltage (Vcell) and a logic voltage (Vdd) by inhibiting assertion of word line signals that enable accesses to the memory cells when the voltages are not within an acceptable operating range. One embodiment comprises a system having a critical condition detector configured to monitor the voltages and to determine whether the voltages are within an acceptable range. When the voltages are not within the acceptable range, the system inhibits assertion of the word lines to the memory cells. Memory accesses which fail because of the inhibited word line signals are retried by a memory controller when the critical conditions that caused the signals to be inhibited no longer exist.

Abstract: A semiconductor integrated circuit device includes: a semiconductor substrate, on which diffusion layers are formed; and multilayered wirings stacked above the semiconductor substrate to be connected to the diffusion layers via contact plugs, wherein a first wring and a second wiring formed thereabove are connected to the diffusion layers via first contact plug(s) and second contact plugs, respectively, and the number of the second contact plugs arrayed in parallel is set to be greater than that of the first contact plug(s).

Abstract: A resistance change memory device includes: a memory chip having memory cells of a resistance change type; and a heater so attached to the memory chip as to apply a temperature bias to the memory chip.

Abstract: Systems and methods for determining local voltages provided by a power distribution network to an integrated circuit chip by applying an external voltage to a power distribution network, firing a set of current sources distributed across the chip and measuring local voltages on the chip. The current sources may, for example, comprise a clock tree carrying a free-running clock signal, or multiple individual current source structures. The voltages may be measured, for instance, by units comprising voltage controlled oscillators (VCO's) coupled to counters which determine the corresponding oscillation frequencies and registers which store the resulting oscillation counts. The measured voltages may be used to identify non-uniformities in the voltage applied across the chip, as well as to determine local differences in the resistance of the power distribution network.

Abstract: Systems and methods for providing power to on-chip components of an integrated circuit with improved uniformity through the use of a split power plane. One embodiment comprises a system having an integrated circuit chip, a power distribution network coupled to the integrated circuit chip, and a power plane coupled to the power distribution network. The power plane is divided into two or more separate sections, each of which is separately connected to the power distribution network.

Abstract: Systems and methods for determining electrical characteristics of systems such as power distribution networks using one-dimensional stimulation of the systems in place of conventional three-dimensional simulation. One embodiment comprises a method for determining the resistance of a power distribution network for an integrated circuit, and includes defining a one-dimensional model of the power distribution network, performing multiple simulations of the one-dimensional model, including each simulation generating a result for the desired network characteristic, and aggregating the results of the simulations. The one-dimensional model comprises an equation in which the overall resistance of the power distribution network is equal to the sum of a coefficient and a representative component resistance value for each layer of the network. The equation is solved for multiple sets of component resistance values to generate a set of network resistance values that are aggregated into a probability distribution.

Abstract: Systems and methods for improved semiconductor device performance are disclosed. In particular, presented are improved semiconductor systems and methods for configuring conductors to reduce impedance variation caused by proximity and/or density and/or operation of connection-bumps. The invention includes adding impedance-reducing conductive features which add no additional functionality to the semiconductor device. The added features may be arranged in areas of sparse connection-bump density. Impedance-reducing conductive features may include metal lines added between functional metal lines, where placement between adjacent functional lines may vary. Impedance-reducing conductive features may be added to any one or combination of conductive layers, and added features may act upon any one or combination of functional features. Further, added features may be electrically active and responsive to semiconductor device operation.

Abstract: Systems and methods for reducing instability and writability problems arising from relative variations between a memory cell voltage (Vcell) and a logic voltage (Vdd) by inhibiting assertion of word line signals that enable accesses to the memory cells when the voltages are not within an acceptable operating range. One embodiment comprises a system having a critical condition detector configured to monitor the voltages and to determine whether the voltages are within an acceptable range. When the voltages are not within the acceptable range, the system inhibits assertion of the word lines to the memory cells. Memory accesses which fail because of the inhibited word line signals are retried by a memory controller when the critical conditions that caused the signals to be inhibited no longer exist.

Abstract: Systems and methods for reducing the latency of data transfers between memory cells by enabling data to be transferred directly between sense amplifiers in the memory system. In one embodiment, a memory system uses a conventional DRAM memory structure having a pair of first-level sense amplifiers, a second-level sense amplifier and control logic for the sense amplifiers. Each of the sense amplifiers is configured to be selectively coupled to a data line. In a direct data transfer mode, the control logic generates control signals that cause the sense amplifiers to transfer data from a first one of the first-level sense amplifiers (a source sense amplifier) to the second-level sense amplifier, and from there to a second one of the first-level sense amplifiers (a destination sense amplifier.) The structure of these sense amplifiers is conventional, and the operation of the system is enabled by modified control logic.

Abstract: Systems and methods for reducing instability and writability problems arising from relative variations between voltages at which memory cells and logic components that access the memory cells operate by inhibiting memory accesses when the voltages are not within an acceptable operating range. One embodiment comprises a pipelined processor having logic components which receive power at a first voltage and a set of SRAM cells which receive power at a second voltage. A critical condition detector is configured to monitor the first and second voltages and to determine whether the ratio of these voltages is within an acceptable range. When the voltages are not within the acceptable range, an exception is generated, and an exception handler stalls the processor pipeline to inhibit accesses to the SRAM cells. When the voltages return to the acceptable range, the exception handler resumes the pipeline and completes handling of the exception.