Abstract: Systems, methods and apparatuses which may be capable of achieving better voltage distribution within a voltage domain are disclosed. Embodiments of the present invention may provide a power distribution network capable of achieving a flatter voltage distribution throughout a voltage domain to which the power distribution network is coupled. More specifically, a power distribution network may comprise multiple power supplies and voltage sensors, each power supply operable to provide power to the voltage domain. A power supply may supply voltage to the voltage domain while one or more additional power supplies may supply power to the voltage domain in the vicinity of a voltage sensor based on the voltage sensed at the voltage sensor. In this way, voltage fluctuation across a voltage domain may be reduced without significantly increasing the power consumption of the semiconductor device.

Abstract: Systems and methods for reducing the latency of data transfers between memory cells by enabling data to be transferred directly between sense amplifiers in the memory system. In one embodiment, a memory system uses a conventional DRAM memory structure having a pair of first-level sense amplifiers, a second-level sense amplifier and control logic for the sense amplifiers. Each of the sense amplifiers is configured to be selectively coupled to a data line. In a direct data transfer mode, the control logic generates control signals that cause the sense amplifiers to transfer data from a first one of the first-level sense amplifiers (a source sense amplifier) to the second-level sense amplifier, and from there to a second one of the first-level sense amplifiers (a destination sense amplifier.) The structure of these sense amplifiers is conventional, and the operation of the system is enabled by modified control logic.

Abstract: Systems and methods for identifying the power usage characteristics of software programs and using the information to determine the manner in which the software programs will be executed, thereby improving the management of power within the device executing the programs. One embodiment comprises a method for selecting execution modes of software programs to improve power consumption associated with execution of the programs. The method includes identifying a plurality of programs to be executed, where the programs may have multiple execution modes. Each program may have multiple program modules, each of which is the program configured to execute in a corresponding execution mode. Each program module has an associated power profile. The program module, hence execution mode, for each program is selected based on the associated power profile, and is then executed according to the selected execution mode.

Abstract: Systems and methods for detecting phase-locked loop circuit lock. In particular, a lock detector configured to detect PLL stability for a user-defined period of time prior to asserting a PLL-lock-detected output. Stability may be indicated by a counter inserted into a PLL circuit and arranged between a phase-frequency detector and a charge pump. Because the counter value is acted upon by the phase-frequency detector, PLL lock is indicated by counter value stability. The digital counter value may be provided to a digital charge pump and a lock detector simultaneously. The lock detector includes registers and difference detectors to determine when the difference between counter values is below a user-defined tolerance. The lock detector may include a variable timer to avoid false indications of lock which may occur when counter values are sampled with the same frequency as a fluctuation frequency of the counter value.

Abstract: Systems and methods for determining power profiles associated with software programs. The power profiles may be multi-value profiles and they may be used to modify the programs to alter the power usage characteristics and corresponding power profiles of the programs. One embodiment comprises a system including a data processor, a power measurement unit and a memory. The power measurement unit is coupled to the data processor to determine a profile of the power used by the data processor during execution of a software program. The memory stores the power profile. The power measurement unit and memory may be integrated on the same chip as the data processor. The system may determine and store the power profile without interrupting execution of the program. The power profile may include multiple power level values associated with intervals during the execution of the program, over-threshold counts, or other power metrics.

Abstract: Systems and methods for reducing the effects of the operation of logic on a phase-locked loop (PLL) circuit are disclosed. These systems and methods may allow a PLL circuit to compensate for the anticipated effects of an instruction before, substantially simultaneously with, or after the execution of the instruction. More particularly, logic associated with the issue of instructions in a system may provide a signal to a PLL in the system based on an instruction. The PLL may then be adjusted to compensate for the anticipated effects of the instruction based on this control signal.

Abstract: Phased-lock loop (PLL) system and method for compensating current leakage where current leakage may include gate-leak current attributable to a gate capacitor. In particular, providing a compensation current to an input node of a voltage-controlled oscillator (VCO) to substantially compensate current leakage and therefore reduce PLL jitter. The PLL circuit includes a compensation charge pump which receives input from a counter and in turn provides a counter-value-proportional compensation current. The counter value increments and decrements according to up and down inputs from a phase frequency detector. The counter value is fixed when the PLL circuit is locked. The PLL circuit is driven to lock by the compensation charge pump, with or without the aid of another charge pump. While the PLL is locked, the compensation charge pump may provide a fixed counter-value-proportional compensation current.

Abstract: Systems and methods for increasing the yield of devices incorporating set-associative cache memories by selectively avoiding the use of cache entries that include defects. In one embodiment, a cache replacement manager determines in which of n possible entries data will be replaced. The cache replacement manager is configured to take into account whether each cache entry is defective when determining whether to select that entry as the destination entry for new data. The cache manager unit may implement a least-recently-used policy in selecting the cache entry in which the new data will be replaced. The cache replacement manager then treats any defective entries as if they hold the most recently used data, and thereby avoids selecting defective entries as the destination for new data. In one embodiment, the cache performs index translation before indexing into each set of cache entries in order to effectively redistribute defective entries among the indices.

Abstract: Phased-lock loop (PLL) system and method for compensating current leakage where current leakage may include gate-leak current attributable to a gate capacitor. In particular, providing a compensation current to an input node of a voltage-controlled oscillator (VCO) to substantially compensate current leakage and therefore reduce PLL jitter. The PLL circuit includes a compensation charge pump which receives input from a counter and in turn provides a counter-value-proportional compensation current. The counter value increments and decrements according to up and down inputs from a phase frequency detector. The counter value is fixed when the PLL circuit is locked. The PLL circuit is driven to lock by the compensation charge pump, with or without the aid of another charge pump. While the PLL is locked, the compensation charge pump may provide a fixed counter-value-proportional compensation current.

Abstract: Systems and methods for detecting phase-locked loop circuit lock. In particular, a lock detector configured to detect PLL stability for a user-defined period of time prior to asserting a PLL-lock-detected output. Stability may be indicated by a counter inserted into a PLL circuit and arranged between a phase-frequency detector and a charge pump. Because the counter value is acted upon by the phase-frequency detector, PLL lock is indicated by counter value stability. The digital counter value may be provided to a digital charge pump and a lock detector simultaneously. The lock detector includes registers and difference detectors to determine when the difference between counter values is below a user-defined tolerance. The lock detector may include a variable timer to avoid false indications of lock which may occur when counter values are sampled with the same frequency as a fluctuation frequency of the counter value.

Abstract: Systems and methods for reducing the effects of the operation of logic on a phase-locked loop (PLL) circuit are disclosed. These systems and methods may allow a PLL circuit to compensate for the anticipated effects of an instruction before, substantially simultaneously with, or after the execution of the instruction. More particularly, logic associated with the issue of instructions in a system may provide a signal to a PLL in the system based on an instruction. The PLL may then be adjusted to compensate for the anticipated effects of the instruction based on this control signal.

Abstract: Systems and methods for improved semiconductor device performance are disclosed. In particular, presented are improved semiconductor systems and methods for configuring conductors to reduce impedance variation caused by proximity and/or density and/or operation of connection-bumps. The invention includes adding impedance-reducing conductive features which add no additional functionality to the semiconductor device. The added features may be arranged in areas of sparse connection-bump density. Impedance-reducing conductive features may include metal lines added between functional metal lines, where placement between adjacent functional lines may vary. Impedance-reducing conductive features may be added to any one or combination of conductive layers, and added features may act upon any one or combination of functional features. Further, added features may be electrically active and responsive to semiconductor device operation.

Abstract: A memory cell array includes spare elements for saving a defective cell. Fuse sets each contain a defective address and mapping information indicative of the relationship between the fuse sets and the spare elements. When the defective address matches an input address, each fuse set outputs a signal for activating a corresponding spare element. The number of the fuse sets within a chip is smaller than the number of the spare elements.

Abstract: A memory cell array includes spare elements for saving a defective cell. Fuse sets each contain a defective address and mapping information indicative of the relationship between the fuse sets and the spare elements. When the defective address matches an input address, each fuse set outputs a signal for activating a corresponding spare element. The number of the fuse sets within a chip is smaller than the number of the spare elements.

Abstract: A memory cell array includes spare elements for saving a defective cell. Fuse sets each contain a defective address and mapping information indicative of the relationship between the fuse sets and the spare elements. When the defective address matches an input address, each fuse set outputs a signal for activating a corresponding spare element. The number of the fuse sets within a chip is smaller than the number of the spare elements.

Abstract: A memory cell array includes spare elements for saving a defective cell. Fuse sets each contain a defective address and mapping information indicative of the relationship between the fuse sets and the spare elements. When the defective address matches an input address, each fuse set outputs a signal for activating a corresponding spare element. The number of the fuse sets within a chip is smaller than the number of the spare elements.

Abstract: This invention provides ways to intercept abnormal power signals to prevent damaging the memory in a semiconductor. To achieve this, the semiconductor memory comprises a first control signal line controlling a selection from row addresses, a second control signal line controlling a selection from column addresses, a first voltage control means cutting off the first control signal line in case that predetermined number of control signals are abnormal, and a second voltage control means cutting off the second control signal line in case that predetermined number of control signals are abnormal.

Abstract: A memory cell array includes spare elements for saving a defective cell. Fuse sets each contain a defective address and mapping information indicative of the relationship between the fuse sets and the spare elements. When the defective address matches an input address, each fuse set outputs a signal for activating a corresponding spare element. The number of the fuse sets within a chip is smaller than the number of the spare elements.

Abstract: A memory cell array includes spare elements for saving a defective cell. Fuse sets each contain a defective address and mapping information indicative of the relationship between the fuse sets and the spare elements. When the defective address matches an input address, each fuse set outputs a signal for activating a corresponding spare element. The number of the fuse sets within a chip is smaller than the number of the spare elements.

Abstract: A memory cell array includes spare elements for saving a defective cell. Fuse sets each contain a defective address and mapping information indicative of the relationship between the fuse sets and the spare elements. When the defective address matches an input address, each fuse set outputs a signal for activating a corresponding spare element. The number of the fuse sets within a chip is smaller than the number of the spare elements.