Abstract: Improve a breakdown voltage and reliability of a semiconductor device. A plurality of semiconductor elements is formed in a cell region. A termination region surrounds the cell region in plan view. In a semiconductor substrate of the termination region, a p-type RESURF region is formed to reach a predetermined depth from an upper surface of the semiconductor substrate. The RESURF region is annularly formed in the termination region to surround the cell region in plan view. The RESURF region contains boron as an impurity.

Abstract: A position control device for a target plant includes a coefficient calculation unit that performs temporary operation of the target plant so as to reverse a direction of travel of the target plant with backlash compensation turned off and calculates a coefficient for reverse detection for each of a plurality of backlash portions, based on a position command value at a timing when a position deviation between a position detection value for a load end and the position command value increases rapidly, a reverse detection unit that operates the target plant with the backlash compensation turned on and detects a timing when a load-side transmission torque is reversed, based on the coefficient, the position command value, and a moment of inertia of the entire load, and a compensation value calculation unit that increases or decreases a backlash compensation value at the timing when reverse is detected.

Abstract: A control device, which is configured to control current of a three-phase alternating current motor by d-q axis control, includes a q-axis current controller configured to receive, as one input, an acceleration torque command value ?f calculated based on a position command value X, and output a controller output voltage ?eq to be added to a q-axis voltage command value vq*. The q-axis current controller calculates, based on the acceleration torque command value ?f, an acceleration q-axis current command value iqf*, which is a current command value corresponding to the acceleration torque command value ?f, and adds, to the controller output voltage ?eq, a value obtained by multiplying the acceleration q-axis current command value iqf* by an IP coefficient KIP indicating a ratio of switching between PI control and I-P control and by a q-axis proportional gain Gqp.

Abstract: A position control apparatus detects currents of processing object phases which flow through the three-phase AC motor, applies offset compensation processing to current detected values of the processing object phases based on offset compensation amounts, and controls the three-phase AC motor based on the current detected values of the processing object phases after the offset compensation processing. Processing of obtaining the offset compensation amounts includes processing of obtaining a Fourier coefficient of a frequency component of a torque ripple based on a torque command value signal, processing of obtaining torque amplitude components of the processing object phases, and processing of obtaining the offset compensation amounts with respect to the processing object phases based on the torque amplitude components of the processing object phases.

Abstract: A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.

Abstract: To improve characteristics of a semiconductor device. A first p-type semiconductor region having an impurity of a conductivity type opposite from that of a drift layer is arranged in the drift layer below a trench, and a second p-type semiconductor region is further arranged that is spaced at a distance from a region where the trench is formed as seen from above and that has the impurity of the conductivity type opposite from that of the drift layer. The second p-type semiconductor region is configured by a plurality of regions arranged at a space in a Y direction (depth direction in the drawings). Thus, it is possible to reduce the specific on-resistance while maintaining the breakdown voltage of the gate insulating film by providing the first and second p-type semiconductor regions and further by arranging the second p-type semiconductor region spaced by the space.

Abstract: A control device, which is configured to control current of a three-phase alternating current motor by d-q axis control, includes a q-axis current controller configured to receive, as one input, an acceleration torque command value ?f calculated based on a position command value X, and output a controller output voltage ?eq to be added to a q-axis voltage command value vq*. The q-axis current controller calculates, based on the acceleration torque command value ?f, an acceleration q-axis current command value iqf*, which is a current command value corresponding to the acceleration torque command value ?f, and adds, to the controller output voltage ?eq, a value obtained by multiplying the acceleration q-axis current command value iqf* by an IP coefficient KIP indicating a ratio of switching between PI control and I-P control and by a q-axis proportional gain Gqp.

Abstract: A position control apparatus detects currents of processing object phases which flow through the three-phase AC motor, applies offset compensation processing to current detected values of the processing object phases based on offset compensation amounts, and controls the three-phase AC motor based on the current detected values of the processing object phases after the offset compensation processing. Processing of obtaining the offset compensation amounts includes processing of obtaining a Fourier coefficient of a frequency component of a torque ripple based on a torque command value signal, processing of obtaining torque amplitude components of the processing object phases, and processing of obtaining the offset compensation amounts with respect to the processing object phases based on the torque amplitude components of the processing object phases.

Abstract: A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.

Abstract: A torque ripple and a position error caused by an offset error of the current sensor affects an electrical angle frequency of a motor. In an apparatus of the present disclosure, a computation device executes a power spectrum computing process when a three-phase alternating current motor is at a constant speed, and a value obtained by subtracting a position command value from a position detected by a position detector is fast Fourier transformed, to compute a power spectrum of a position error signal at the electrical angle frequency. Then, the computation device executes an offset correction computing process, to evaluate the power spectrum and to update an offset correction amount. By repeatedly executing these processes when the three-phase alternating current motor is driven at a constant speed, the torque ripple and position error caused by the offset error are reduced.

Abstract: To improve characteristics of a semiconductor device. A first p-type semiconductor region having an impurity of a conductivity type opposite from that of a drift layer is arranged in the drift layer below a trench, and a second p-type semiconductor region is further arranged that is spaced at a distance from a region where the trench is formed as seen from above and that has the impurity of the conductivity type opposite from that of the drift layer. The second p-type semiconductor region is configured by a plurality of regions arranged at a space in a Y direction (depth direction in the drawings). Thus, it is possible to reduce the specific on-resistance while maintaining the breakdown voltage of the gate insulating film by providing the first and second p-type semiconductor regions and further by arranging the second p-type semiconductor region spaced by the space.

Abstract: A position control device includes a subtracter for subtracting a q-axis current detection value iq from a q-axis current command value iq* to output a q-axis current error ?iq, an adder for adding a q-axis current compensation amount iqc* for compensating for response timing of q-axis current to the q-axis current error ?iq, a q-axis current controller for amplifying an output of the adder by I-P control to calculate a q-axis voltage error ?vq and calculating a q-axis voltage command value vq* on the basis of the q-axis voltage error ?vq, and a second adder for adding a q-axis voltage feedforward amount vqf corresponding to a time derivative value s·iq of the q-axis current to the q-axis voltage command value vq* to calculate a final q-axis voltage command value.

Abstract: In a vertical power MOSFET having a superjunction structure, the withstand voltage of the power MOSFET can be ensured even if the aspect ratios of an n-type column region and a p-type column region are increased so as to vary the impurity concentration of the p-type column region. P-type semiconductor regions PR1 are formed on the sides of an n-type column NC1 adjacent to a p-type column region PC1. In this configuration, the p-type semiconductor region PR1 is formed from the upper end of the n-type column region NC1 to about a half depth of a height from the upper end to the lower end of the side of the n-type column region NC1. This inclines the sides of the overall p-type column region including the p-type semiconductor regions PR1 and the p-type column region PC1.

Abstract: A controller for a motor determines a voltage limit circle based on a velocity of the motor, a DC bus voltage of an inverter, calculates a q axis current limit value based on the voltage limit circle and a predetermined current limit circle, determines, as a q axis current command value, a value obtained through a limit process which is applied using the q axis current limit value to a q axis current value calculated in accordance with a torque command value, and determines a corresponding d axis current value based on the q axis current command value.

Abstract: An aspect of the present invention allows a natural, humanlike conversation to be carried out between electronic apparatus. The audio adjustment device (1) includes: a sound analyzing section (21) for analyzing a second sound outputted from a second electronic apparatus; and an element adjusting section (24) for adjusting a first element characterizing the first sound, the first element being adjusted on a basis of either a content of a text in the second sound or a second element characterizing the second sound, the content of the text in the second sound and the second element being obtained by analysis by the sound analyzing section (21).

Abstract: A torque ripple and a position error caused by an offset error of the current sensor affects an electrical angle frequency of a motor. In an apparatus of the present disclosure, a computation device executes a power spectrum computing process when a three-phase alternating current motor is at a constant speed, and a value obtained by subtracting a position command value from a position detected by a position detector is fast Fourier transformed, to compute a power spectrum of a position error signal at the electrical angle frequency. Then, the computation device executes an offset correction computing process, to evaluate the power spectrum and to update an offset correction amount. By repeatedly executing these processes when the three-phase alternating current motor is driven at a constant speed, the torque ripple and position error caused by the offset error are reduced.

Abstract: A position control device includes a subtracter for subtracting a q-axis current detection value iq from a q-axis current command value iq* to output a q-axis current error ?iq, an adder for adding a q-axis current compensation amount iqc* for compensating for response timing of q-axis current to the q-axis current error ?iq, a q-axis current controller for amplifying an output of the adder by I-P control to calculate a q-axis voltage error ?vq and calculating a q-axis voltage command value vq* on the basis of the q-axis voltage error ?vq, and a second adder for adding a q-axis voltage feedforward amount vqf corresponding to a time derivative value s·iq of the q-axis current to the q-axis voltage command value vq* to calculate a final q-axis voltage command value.

Abstract: A position control apparatus is provided that can perform accurate nonlinear compensation control immediately after the apparatus is activated. At a time of acceleration, a signal amplification ratio is calculated and designated for each signal vector element based on information related to acceleration/deceleration at a starting time and the structure of a signal vector that is determined for a target plant, and as a result, a signal vector for which the strength of linear independence is increased is generated. Because the strength of the linear independence condition of the signal vector is increased, the speed of convergence of identification for a low-frequency disturbance element, such as a gravitational torque or a sliding-mode load torque, can be increased.

Abstract: A controller for a motor determines a voltage limit circle based on a velocity of the motor, a DC bus voltage of an inverter, calculates a q axis current limit value based on the voltage limit circle and a predetermined current limit circle, determines, as a q axis current command value, a value obtained through a limit process which is applied using the q axis current limit value to a q axis current value calculated in accordance with a torque command value, and determines a corresponding d axis current value based on the q axis current command value.

Abstract: A drift layer is formed over a semiconductor substrate which is an SiC substrate. The drift layer includes first to third n-type semiconductor layers and a p-type impurity region. Herein, an impurity concentration of the second n-type semiconductor layer is higher than an impurity concentration of the first n-type semiconductor layer and an impurity concentration of the third n-type semiconductor layer. Also, in plan view, the second semiconductor layer located between the p-type impurity regions adjacent to each other overlaps with at least a part of a gate electrode formed in a trench.