Abstract: To provide a semiconductor device including a power semiconductor element having improved reliability. The semiconductor device has a cell region and a peripheral region formed outside the cell region. The n type impurity concentration of n type column regions in the cell region is made higher than that of n type column regions comprised of an epitaxial layer in the peripheral region. Further, a charge balance is kept in each of the cell region and the peripheral region and each total electric charge is set so that a total electric charge of first p type column regions and a total electric charge of n type column regions in the cell region become larger than a total electric charge of third p type column regions and n type column regions comprised of an epitaxial layer in the peripheral region, respectively.

Abstract: Reduction of power consumption of a semiconductor device is aimed. The semiconductor device includes a cell region where a vertical power MOSFET is formed and an intermediate region surrounding the cell region. In each of the cell region and the intermediate region, a plurality of p-type column regions and a plurality of n-type column regions are alternately formed. The n-type column region arranged in the cell region has a defect region formed therein, whereas the n-type column region arranged in the intermediate region does not have the defect region. A defect density in the n-type column region arranged in the cell region is larger than that in the n-type column region arranged in the intermediate region.

Abstract: In a semiconductor device including a super junction structure that p-type columns and n-type columns are periodically arranged, a depth of a p-type column region in a cell region that a semiconductor element is formed is made shallower than a depth of a p-type column region in an intermediate region which surrounds the cell region. Thereby, a breakdown voltage of the cell region becomes lower than a breakdown voltage of the intermediate region. An avalanche breakdown phenomenon is caused to occur preferentially in the cell region in which even when an avalanche current is generated, the current is dispersed and smoothly flows. Thereby, it is possible to avoid local current constriction and breakage incidental thereto and consequently it becomes possible to improve avalanche resistance (an avalanche current amount with which a semiconductor device comes to be broken).

Abstract: To provide a semiconductor device including a power semiconductor element having improved reliability. The semiconductor device has a cell region and a peripheral region formed outside the cell region. The n type impurity concentration of n type column regions in the cell region is made higher than that of n type column regions comprised of an epitaxial layer in the peripheral region. Further, a charge balance is kept in each of the cell region and the peripheral region and each total electric charge is set so that a total electric charge of first p type column regions and a total electric charge of n type column regions in the cell region become larger than a total electric charge of third p type column regions and n type column regions comprised of an epitaxial layer in the peripheral region, respectively.

Abstract: Properties of a semiconductor device are improved. A semiconductor device having a superjunction structure, in which p-type column regions and n-type column regions are periodically arranged, is configured as follows. Each n-type column region has a vertical section including an n-type epitaxial layer located between trenches and a tapered embedded n-type epitaxial film disposed on a side face of the trench. Each p-type column region includes an embedded p-type epitaxial film disposed within the trench. The tapered embedded n-type epitaxial film is thus provided on the sidewall of the trench in which the p-type column region is to be disposed, thereby the p-type column region is allowed to have an inverted trapezoidal shape, leading to an increase in margin for a variation in concentration of a p-type impurity in the p-type column region. On resistance can be reduced by lateral diffusion of an n-type impurity (for example, As).

Abstract: In a semiconductor device including a super junction structure that p-type columns and n-type columns are periodically arranged, a depth of a p-type column region in a cell region that a semiconductor element is formed is made shallower than a depth of a p-type column region in an intermediate region which surrounds the cell region. Thereby, a breakdown voltage of the cell region becomes lower than a breakdown voltage of the intermediate region. An avalanche breakdown phenomenon is caused to occur preferentially in the cell region in which even when an avalanche current is generated, the current is dispersed and smoothly flows. Thereby, it is possible to avoid local current constriction and breakage incidental thereto and consequently it becomes possible to improve avalanche resistance (an avalanche current amount with which a semiconductor device comes to be broken).

Abstract: A tandem control method is applied to a position control apparatus. The tandem control method controls one object to be controlled by individually driving a first driving shaft and a second driving shaft. A speed difference between the first driving shaft and the object to be controlled is amplified and added to a torque command value of the first driving shaft. A speed difference between the second driving shaft and the object to be controlled is amplified and added to a torque command value of the second driving shaft.

Abstract: A super junction structure having a high aspect ratio is formed. An epitaxial layer is dividedly formed in layers using the trench fill process, and when each of the layers has been formed, trenches are formed in that layer. For example, when a first epitaxial layer has been formed, first trenches are formed in the epitaxial layer. Subsequently, when a second epitaxial layer has been formed, second trenches are formed in the epitaxial layer. Subsequently, when a third epitaxial layer has been formed, third trenches are formed in the third epitaxial layer.

Abstract: A disturbance suppressing system is incorporated in a servo control apparatus. In the disturbance suppressing system, a component e introduced in an output of a target plant due to a disturbance estimate error is amplified in a disturbance suppressing controller having a frequency characteristic corresponding to a magnitude of a plant error, which is a difference in transfer characteristics between the target plant and the plant model, and the amplified component e is fed back to a control input.

Abstract: A super junction structure having a high aspect ratio is formed. An epitaxial layer is dividedly formed in layers using the trench fill process, and when each of the layers has been formed, trenches are formed in that layer. For example, when a first epitaxial layer has been formed, first trenches are formed in the epitaxial layer. Subsequently, when a second epitaxial layer has been formed, second trenches are formed in the epitaxial layer. Subsequently, when a third epitaxial layer has been formed, third trenches are formed in the third epitaxial layer.

Abstract: A fully-closed loop position controller with a velocity control system based on a velocity feedback of mixed velocities of a motor velocity and a load velocity. The fully-closed loop position controller identifies a ratio of load moment of inertia in real time to select an optimum mix gain in accordance with a changing ratio of load moment of inertia such that a position loop gain and a speed loop gain can be varied accordingly. The fully-closed loop position controller controls the load position based on the mix gain, the position loop gain, and the velocity loop gain.

Abstract: Reduction of power consumption of a semiconductor device is aimed. The semiconductor device includes a cell region where a vertical power MOSFET is formed and an intermediate region surrounding the cell region. In each of the cell region and the intermediate region, a plurality of p-type column regions and a plurality of n-type column regions are alternately formed. The n-type column region arranged in the cell region has a defect region formed therein, whereas the n-type column region arranged in the intermediate region does not have the defect region. A defect density in the n-type column region arranged in the cell region is larger than that in the n-type column region arranged in the intermediate region.

Abstract: A semiconductor device which solves the following problem of a super junction structure: due to a relatively high concentration in the body cell region (active region), in peripheral areas (peripheral regions or junction end regions), it is difficult to achieve a breakdown voltage equivalent to or higher than in the cell region through a conventional junction edge terminal structure or resurf structure. The semiconductor device includes a power MOSFET having a super junction structure formed in the cell region by a trench fill technique. Also, super junction structures having orientations parallel to the sides of the cell region are provided in a drift region around the cell region.

Abstract: A position control device for driving one control target, using two drive shafts, has position control units provided to the respective drive shafts.

Abstract: A manufacturing method of a power MOSFET employs a hard mask film over a portion of the wafer surface as a polishing stopper, between two successive polishing steps. After embedded epitaxial growth is performed in a state where a hard mask film for forming trenches is present in at least a scribe region of a wafer, primary polishing is performed by using the hard mask film as a stopper, and secondary polishing is then performed after the hard mask film is removed.

Abstract: A method for manufacturing a semiconductor device including a cell region and a peripheral region formed outside the cell region, comprising the steps of (a) providing a semiconductor substrate including a first epitaxial layer of a first conductivity type formed over a main surface thereof, (b) doping a lower band gap impurity for making the band gap smaller than the band gap of the first epitaxial layer before doping into the first epitaxial layer in the cell region, and thereby forming a lower band gap region, (c) after the step (b), forming a plurality of first column regions of a second conductivity type which is the opposite conductivity type to the first conductivity type in such a manner as to be separated from one another in the first epitaxial layer extending from the cell region to the peripheral region, and (d) after the step (c), forming a second epitaxial layer.

Abstract: The information terminal device (1) of the present invention includes an operation determining section (43). The operation determining section (43) releases locking of an operation carried out with respect to an active application in the information terminal device (1), in a case where a holding of the information terminal device (1) by a user is detected while the operation is being locked. This prevents the user from carrying out an unintended operation with respect to an active application, instead of making operations complex.

Abstract: A position control device for driving one control target, using two drive shafts, has position control units provided to the respective drive shafts.

Abstract: A super junction structure having a high aspect ratio is formed. An epitaxial layer is dividedly formed in layers using the trench fill process, and when each of the layers has been formed, trenches are formed in that layer. For example, when a first epitaxial layer has been formed, first trenches are formed in the epitaxial layer. Subsequently, when a second epitaxial layer has been formed, second trenches are formed in the epitaxial layer. Subsequently, when a third epitaxial layer has been formed, third trenches are formed in the third epitaxial layer.

Abstract: In a semiconductor device including a super junction structure that p-type columns and n-type columns are periodically arranged, a depth of a p-type column region in a cell region that a semiconductor element is formed is made shallower than a depth of a p-type column region in an intermediate region which surrounds the cell region. Thereby, a breakdown voltage of the cell region becomes lower than a breakdown voltage of the intermediate region. An avalanche breakdown phenomenon is caused to occur preferentially in the cell region in which even when an avalanche current is generated, the current is dispersed and smoothly flows. Thereby, it is possible to avoid local current constriction and breakage incidental thereto and consequently it becomes possible to improve avalanche resistance (an avalanche current amount with which a semiconductor device comes to be broken).