Patents by Inventor Satoshi Inaba

Satoshi Inaba has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200345407
    Abstract: A generator that includes a drive circuit connected to a surgical instrument including a vibration system having a probe and an ultrasonic transducer, which supplies power to the ultrasonic transducer. The control circuit detects a first trigger causing the control circuit to perform a resonance-point search on the vibration system. Upon detecting the first trigger, the control circuit determines a resonance point of a frequency of vibration of the probe by performing the resonance-point search, and upon determining the resonance point, causes the drive circuit to execute a standby operation. The control circuit then detects a second trigger causing the surgical instrument to treat the living tissue, and upon detecting the second trigger, causes the drive circuit to execute an actual output operation by increasing the supply of power to the surgical instrument such that the surgical instrument treats the living tissue.
    Type: Application
    Filed: July 22, 2020
    Publication date: November 5, 2020
    Applicant: OLYMPUS CORPORATION
    Inventors: Kizuku INABA, Kenichi KIMURA, Satoshi HONDA
  • Patent number: 10821835
    Abstract: A self-cooled reactor apparatus includes: a pair of frames attached to a vehicular mount, a coil disposed between the pair of frames and fixed to the frames, a cover disposed between the pair of frames, and a protective member. The coil is covered by the cover having at least a portion thereof in which through-holes are formed. The protective member, while retaining a flow passage for air from the through-holes to the coil, blocks a space between the through-hole and the coil in a penetration direction of the through-holes.
    Type: Grant
    Filed: October 9, 2015
    Date of Patent: November 3, 2020
    Assignee: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Satoshi Inaba, Yuki Ishimori
  • Patent number: 10759937
    Abstract: A polyketone composition includes: (A) a polyketone having, in a main chain, a structural unit represented by the following Formula (I); and (B) an epoxy compound. In Formula (I), X represents a bivalent group that has from 1 to 50 carbon atoms and that may have a substituent group, Y represents a bivalent hydrocarbon group that has from 1 to 30 carbon atoms and that may have a substituent group, and n represents an integer from 1 to 1500.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: September 1, 2020
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Hiroshi Matsutani, Nanako Mizuguchi, Satoshi Asaka, Misao Inaba, Yohei Ishikawa, Keiko Kudoh, Katsuya Maeyama
  • Patent number: 10707404
    Abstract: In a piezoelectric element, internal stress generated in an inactive portion at the time of sintering when a piezoelectric element is fabricated or stress applied from the outside to the inactive portion is absorbed by a recess of a lower surface of a first through hole conductor and a recess of an upper surface of a second through hole conductor. Accordingly, for example, deformation, rupture, or the like of the through hole conductor is prevented, and conduction failure or disconnection of an electrode layer or a through hole conductor is prevented. Further, in the inactive portion, since a protrusion of the piezoelectric layer enters the recess of the through hole conductor, a holding force of the piezoelectric layer with respect to the through hole conductor increases, and deformation of the through hole conductor is prevented or obstructed.
    Type: Grant
    Filed: July 3, 2017
    Date of Patent: July 7, 2020
    Assignee: TDK CORPORATION
    Inventors: Yoshiki Ohta, Satoshi Sasaki, Yoshiaki Ohta, Takahiro Kezuka, Katsuya Inaba, Rin Sato, Kazushi Tachimoto, Masayoshi Inoue, Yuzo Komatsu
  • Publication number: 20200172494
    Abstract: Cystic fibrosis is developed through mutation of Cystic Fibrosis Transmembrane conductance Regulator (CFTR), which is one type of chloride channel. An object of the present invention is to provide compounds effective in the treatment of cystic fibrosis that open a chloride channel different from CFTR, which is the cause of the disease, and do not depend on CFTR. Compounds of the present invention are compounds or pharmaceutically acceptable salts thereof that open calcium dependent chloride channels (CaCCs) via G-protein coupled receptor 39 (GPR39) agonism to have strong chloride ion-secretory action, and are represented by the following general formula (I): General formula (I): wherein, X represents a carboxyl group or a tetrazolyl group; Q represents a C1-C3 alkylene group, an oxygen atom, a sulfur atom, etc.; G represents a phenyl group where the phenyl group may have 1 to 3 substituents independently selected from the group consisting of a halogen atom, a cyano group, a C1-C6 alkyl group, etc.
    Type: Application
    Filed: December 26, 2017
    Publication date: June 4, 2020
    Applicant: Daiichi Sankyo Company, Limited
    Inventors: Yasuyuki Takeda, Yamato Suzuki, Toshiharu Noji, Hidenobu Murafuji, Satoshi Muneoka, Hidekazu Inoue, Bitoku Takahashi, Rie Inaba
  • Patent number: 10574011
    Abstract: Provided is a dummy tape assembly (60) that is attached to a rotary connector. The dummy tape assembly (60) includes a tape body (70) including a plurality of dummy tape portions (61) and a folding back portion (62) integrally formed therein. The plurality of dummy tape portions (61) differ in length in a length direction. The folding back portion (62) connects the dummy tape portions (61) to each other at end portions in the length direction of the dummy tape portions (61) in a folded state. The plurality of dummy tape portions (61) each include attachment holes (63) near both ends in length direction of each of the plurality of dummy tape portion (61), the openings being configured to allow the tape body (70) to be attached to the rotary connector (1).
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: February 25, 2020
    Assignees: FURUKAWA ELECTRIC CO., LTD., FURUKAWA AUTOMOTIVE SYSTEMS INC.
    Inventors: Satoshi Tanaka, Hiroaki Inaba, Katsumi Takubo
  • Publication number: 20190389729
    Abstract: A graphite film has a higher degree of thermal diffusion property in one in-plane direction and a method produces the graphite film. The graphite film includes a first axial direction, which is a direction having the highest thermal diffusivity in a film surface, and a second axial direction orthogonal to the first axial direction in the film surface. A value obtained by dividing the thermal diffusivity in the first axial direction by a thermal diffusivity in the second axial direction is not less than 1.020 and not more than 1.300.
    Type: Application
    Filed: February 5, 2018
    Publication date: December 26, 2019
    Applicant: KANEKA CORPORATION
    Inventors: Keisuke INABA, Yusuke OHTA, Satoshi KATAYAMA, Makoto KUTSUMIZU, Yasushi NISHIKAWA
  • Publication number: 20190241044
    Abstract: A refrigerant cycle provides a heat pump cycle apparatus. An outdoor heat exchanger, a control valve, and a refrigerant container are arranged in series in this order. The outdoor heat exchanger provides a passage in which a passage cross-sectional area of the refrigerant changes. When the outdoor heat exchanger is used as a condenser, the flow direction of the refrigerant is a direction in which the passage cross-sectional area becomes relatively small. When the outdoor heat exchanger is used as an evaporator, the flow direction of the refrigerant is a direction in which the passage cross-sectional area becomes relatively large. In both flow directions, the refrigerant container acts as a receiver.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 8, 2019
    Inventors: Satoshi ITO, Atsushi INABA
  • Publication number: 20190219463
    Abstract: A stress measurement device for strengthened glass includes a polarization phase difference variable member configured to vary a polarization phase difference of a laser light by one wavelength of the laser light or more; an imaging element configured to image a plurality of times at a predetermined time interval a scattered light emitted according to the laser light with the varied polarization phase difference entering the strengthened glass, and obtain a plurality of images; and an arithmetic unit configured to measure a periodic change in luminance of the scattered light using the plurality of images, calculate a change in a phase of the change in luminance, and calculate a stress distribution in a depth direction from a surface of the strengthened glass based on the change in the phase.
    Type: Application
    Filed: March 25, 2019
    Publication date: July 18, 2019
    Applicants: ORIHARA INDUSTRIAL CO., LTD., AGC Inc.
    Inventors: Shuji ORIHARA, Yoshio ORIHARA, Satoshi OGAMI, Seiji INABA
  • Patent number: 10351670
    Abstract: An aromatic polyketone including, in a structural unit, at least one alicyclic skeleton and at least one carbon atom bound by two rotatable single bonds, or an aromatic polyketone including a structural unit represented by the following Formula (1), the following Formula (2), or the following Formula (4), and a structural unit represented by the following Formula (5) is provided.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: July 16, 2019
    Assignee: HITACHI CHEMICAL COMPANY, LTD.
    Inventors: Nanako Mizuguchi, Hiroshi Matsutani, Satoshi Asaka, Misao Inaba, Katsuya Maeyama
  • Patent number: 10327675
    Abstract: The present invention has an objective of evaluating a motor function of a subject with a neurodegenerative disease with high accuracy using a motor function analysis system that utilizes a wrist joint movement of the subject. The motor function analysis system includes: a display unit for displaying image information including a moving target image and a cursor image for tracking the target image; a moving unit used by the subject to move the cursor image; and an analyzer for detecting the tracking status of the target image tracked by the cursor image and analyzing the frequency of the movement components contained in the tracking status.
    Type: Grant
    Filed: April 30, 2014
    Date of Patent: June 25, 2019
    Assignee: TOKYO METROPOLITAN INSTITUTE OF MEDICAL SCIENCE
    Inventors: Shinji Kakei, Jongho Lee, Satoshi Orimo, Akira Inaba, Yasuhiro Okada
  • Patent number: 10311929
    Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: June 4, 2019
    Assignees: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Hisanori Aikawa, Tatsuya Kishi, Keisuke Nakatsuka, Satoshi Inaba, Masaru Toko, Keiji Hosotani, Jae Yun Yi, Hong Ju Suh, Se Dong Kim
  • Publication number: 20180268980
    Abstract: A self-cooled reactor apparatus includes: a pair of frames attached to a vehicular mount, a coil disposed between the pair of frames and fixed to the frames, a cover disposed between the pair of frames, and a protective member. The coil is covered by the cover having at least a portion thereof in which through-holes are formed. The protective member, while retaining a flow passage for air from the through-holes to the coil, blocks a space between the through-hole and the coil in a penetration direction of the through-holes.
    Type: Application
    Filed: October 9, 2015
    Publication date: September 20, 2018
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Satoshi INABA, Yuki ISHIMORI
  • Publication number: 20180102156
    Abstract: According to an embodiment, a resistance change memory includes a semiconductor substrate, a transistor having a control terminal, a first terminal and a second terminal, the transistor provided on the semiconductor substrate, an insulating layer covering the transistor, a first conductive line connected to the first terminal and provided on the insulating layer, a second conductive line provided on the insulating layer, and a resistance change element connected between the second terminal and the second conductive line. The first conductive line has a width greater than a width of the second conductive line in a direction in which the first and second conductive lines are arranged.
    Type: Application
    Filed: December 8, 2017
    Publication date: April 12, 2018
    Applicants: TOSHIBA MEMORY CORPORATION, SK HYNIX INC.
    Inventors: Hisanori AIKAWA, Tatsuya KISHI, Keisuke NAKATSUKA, Satoshi INABA, Masaru TOKO, Keiji HOSOTANI, Jae Yun YI, Hong Ju SUH, Se Dong KIM
  • Patent number: 9773838
    Abstract: According to one embodiment, there is provided a magnetoresistive memory device. The memory device includes active areas arranged on a semiconductor substrate, resistance change elements arrayed to matrix in an X direction and a Y direction above the substrate, and selective transistors provided to correspond to the respective resistance change elements. A plurality of gate electrodes of the selective transistors are spaced apart at regular intervals in the X direction and arranged along the Y direction. Each of the active areas is provided to cross two of the gate electrodes adjacent to each other, such as to be along the X direction at a portion crossing the gate electrodes, and formed to be inclined with respect to the X direction between the adjacent gate electrodes.
    Type: Grant
    Filed: March 10, 2015
    Date of Patent: September 26, 2017
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventor: Satoshi Inaba
  • Patent number: 9542988
    Abstract: According to one embodiment, a semiconductor memory device includes a memory cell, a bit line connected to the memory cell, a sense circuit which senses data of the memory cell based on second current that flows through the memory cell and first current, a first transistor of a first conductivity type, which is connected to the bit line and through which the second current flows, and a second transistor of the first conductivity type, through which the first current flows.
    Type: Grant
    Filed: March 9, 2016
    Date of Patent: January 10, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Satoshi Inaba
  • Patent number: 9515183
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate having a trench and including an active area including a channel area formed along an inner surface of the trench and source/drain areas formed at both ends of the channel area and sandwiching the trench, a gate insulating film formed on the inner surface of the trench, and a gate electrode formed in the trench in which the gate insulating film is provided. A main surface of the semiconductor substrate has {100} plane orientation, a portion of the channel area parallel to a side surface of the trench has {110} channel plane orientation and has <100> channel orientation in a channel length direction, and tensile stress in the channel length direction and compressive stress in a channel width direction are applied to the portion of the channel area parallel to the side surface of the trench.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: December 6, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Satoshi Inaba
  • Patent number: 9450059
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate with a groove for forming an embedded gate therein, and a gate electrode embedded via a gate insulator film in the groove. A portion of the semiconductor substrate near the gate electrode is doped with a chemical element which is inactive in the semiconductor substrate.
    Type: Grant
    Filed: January 21, 2014
    Date of Patent: September 20, 2016
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventor: Satoshi Inaba
  • Publication number: 20160268432
    Abstract: According to one embodiment, a semiconductor device includes a semiconductor substrate having a trench and including an active area including a channel area formed along an inner surface of the trench and source/drain areas formed at both ends of the channel area and sandwiching the trench, a gate insulating film formed on the inner surface of the trench, and a gate electrode formed in the trench in which the gate insulating film is provided. A main surface of the semiconductor substrate has {100} plane orientation, a portion of the channel area parallel to a side surface of the trench has {110} channel plane orientation and has <100> channel orientation in a channel length direction, and tensile stress in the channel length direction and compressive stress in a channel width direction are applied to the portion of the channel area parallel to the side surface of the trench.
    Type: Application
    Filed: September 2, 2015
    Publication date: September 15, 2016
    Inventor: Satoshi INABA
  • Publication number: 20160071907
    Abstract: According to one embodiment, there is provided a magnetoresistive memory device. The memory device includes active areas arranged on a semiconductor substrate, resistance change elements arrayed to matrix in an X direction and a Y direction above the substrate, and selective transistors provided to correspond to the respective resistance change elements. A plurality of gate electrodes of the selective transistors are spaced apart at regular intervals in the X direction and arranged along the Y direction. Each of the active areas is provided to cross two of the gate electrodes adjacent to each other, such as to be along the X direction at a portion crossing the gate electrodes, and formed to be inclined with respect to the X direction between the adjacent gate electrodes.
    Type: Application
    Filed: March 10, 2015
    Publication date: March 10, 2016
    Inventor: Satoshi INABA