Abstract: A semiconductor device includes a support substrate, a buried insulation film, provided on the support substrate, having a thickness of 5 to 10 nm, a silicon layer provided on the buried insulation film, a MOSFET provided in the silicon layer, and a triple-well region provided in the support substrate under the MOSFET.

Abstract: In a semiconductor device, source/drain layers have a low resistivity region and an extension region extending from the low resistivity region toward the channel region. The extension regions are lower in impurity concentration and shallower in depth than the low resistivity regions. The device also has a first impurity-doped layer formed in the channel region between the source/drain layers, a second impurity-doped layer formed under the first impurity-doped layer, and a third impurity-doped layer formed under the second impurity-doped layer. The first impurity-doped layer is equal or less in junction depth than the extension regions. The second impurity doped layer has impurity concentration and thickness to be fully depleted due to a built-in potential as created between the first and third impurity-doped layers.

Abstract: In a semiconductor device, source/drain layers have a low resistivity region and an extension region extending from the low resistivity region toward the channel region. The extension regions are lower in impurity concentration and shallower in depth than the low resistivity regions. The device also has a first impurity-doped layer formed in the channel region between the source/drain layers, a second impurity-doped layer formed under the first impurity-doped layer, and a third impurity-doped layer formed under the second impurity-doped layer. The first impurity-doped layer is equal or less injunction depth than the extension regions. The second impurity doped layer has impurity concentration and thickness to be fully depleted due to a built-in potential as created between the first and third impurity-doped layers.

Abstract: A semiconductor device includes an active layer having a first side surface, a second side surface perpendicular to the first side surface and a third side surface opposite to the second side surface, a first gate electrode arranged on the first side surface with a first gate insulating film disposed therebetween, a second gate electrode formed of a material different from that of the first gate electrode and arranged on the second side surface with a second gate insulating film disposed therebetween, and a third gate electrode formed of a material different from that of the first gate electrode and arranged on the third side surface with a third gate insulating film disposed therebetween.

Abstract: An aspect of the present invention provides a semiconductor device that includes a first transistor including a source region, a drain region provided in the same device region as the source region, and a loop-shaped gate electrode region, and a second transistor sharing, with the first transistor, the loop-shaped gate electrode region and the source region or the drain region.

Abstract: There is provided a MISFET which suppresses a short-channel effect in a deep submicron region and has a low parasitic resistance, a low parasitic capacitance, and a small drain junction leakage current. A shallow concave is formed in a channel forming portion and an extension region forming portion of a MISFET, shallow ion implantation for forming an extension region is performed to a bottom surface of the shallow concave. Deep ion implantation for forming a source/drain region is performed to a silicon substrate adjacent to the concave, and the position of a peak concentration of the shallow ion implantation is caused to coincide with the position of a peak concentration of the deep ion implantation, so that a MISFET which suppresses a short-channel effect and has a low source/drain parasitic resistance, a low source/drain parasitic capacitance, and a small drain junction leakage current generated by SALICIDE steps can be provided.

Abstract: A semiconductor device includes an active layer having a first side surface, a second side surface perpendicular to the first side surface and a third side surface opposite to the second side surface, a first gate electrode arranged on the first side surface with a first gate insulating film disposed therebetween, a second gate electrode formed of a material different from that of the first gate electrode and arranged on the second side surface with a second gate insulating film disposed therebetween, and a third gate electrode formed of a material different from that of the first gate electrode and arranged on the third side surface with a third gate insulating film disposed therebetween.

Abstract: There is disclosed a semiconductor device having: a semiconductor substrate; a first gate electrode constructed of a multi-layered stack member provided in a memory region, formed with memory cells, of a surface area of the semiconductor substrate so that the first gate electrode is insulated by a first insulating layer from the semiconductor substrate; and a second gate electrode provided in a logic region, formed with a logic circuit for controlling at least the memory cells, of the surface area of the semiconductor substrate so that the second gate electrode is insulated by a second insulating layer from the semiconductor substrate, wherein said layer, brought into contact with the first insulating layer, of the first gate electrode and the layer, brought into contact with the second insulating layer, of the second gate electrode, are composed of materials different from each other.

Abstract: A semiconductor device Having: a semiconductor substrate; a first gate electrode constructed of a multi-layered stack member provided in a memory region, formed with memory cells, so that the first gate electrode is insulated by a first insulating layer from the semiconductor substrate; and a second gate electrode provided in a logic region, formed with a logic circuit for controlling at least the memory cells, so that the second gate electrode is insulated by a second insulating layer from a semiconductor substrate, wherein said layer, brought into contact with the first insulating layer, of the first gate electrode and the layer, brought into contact with the second insulating layer, of the second gate electrode, are composed of materials different from each other, and a method for making the same.

Abstract: There is provided a MISFET which suppresses a short-channel effect in a deep submicron region and has a low parasitic resistance, a low parasitic capacitance, and a small drain junction leakage current. A shallow concave is formed in a channel forming portion and an extension region forming portion of a MISFET, shallow ion implantation for forming an extension region is performed to a bottom surface of the shallow concave. Deep ion implantation for forming a source/drain region is performed to a silicon substrate adjacent to the concave, and the position of a peak concentration of the shallow ion implantation is caused to coincide with the position of a peak concentration of the deep ion implantation, so that a MISFET which suppresses a short-channel effect and has a low source/drain parasitic resistance, a low source/drain parasitic capacitance, and a small drain junction leakage current generated by SALICIDE steps can be provided.

Abstract: There is provided a MISFET which suppresses a short-channel effect in a deep submicron region and has a low parasitic resistance, a low parasitic capacitance, and a small drain junction leakage current. A shallow concave is formed in a channel forming portion and an extension region forming portion of a MISFET, shallow ion implantation for forming an extension region is performed to a bottom surface of the shallow concave. Deep ion implantation for forming a source/drain region is performed to a silicon substrate adjacent to the concave, and the position of a peak concentration of the shallow ion implantation is caused to coincide with the position of a peak concentration of the deep ion implantation, so that a MISFET which suppresses a short-channel effect and has a low source/drain parasitic resistance, a low source/drain parasitic capacitance, and a small drain junction leakage current generated by SALICIDE steps can be provided.

Abstract: There is provided a MISFET which suppresses a short-channel effect in a deep submicron region and has a low parasitic resistance, a low parasitic capacitance, and a small drain junction leakage current. A shallow concave is formed in a channel forming portion and an extension region forming portion of a MISFET, shallow ion implantation for forming an extension region is performed to a bottom surface of the shallow concave. Deep ion implantation for forming a source/drain region is performed to a silicon substrate adjacent to the concave, and the position of a peak concentration of the shallow ion implantation is caused to coincide with the position of a peak concentration of the deep ion implantation, so that a MISFET which suppresses a short-channel effect and has a low source/drain parasitic resistance, a low source/drain parasitic capacitance, and a small drain junction leakage current generated by SALICIDE steps can be provided.

Abstract: There is disclosed a semiconductor device having: a semiconductor substrate; a first gate electrode constructed of a multi-layered stack member provided in a memory region, formed with memory cells, of a surface area of the semiconductor substrate so that the first gate electrode is insulated by a first insulating layer from the semiconductor substrate; and a second gate electrode provided in a logic region, formed with a logic circuit for controlling at least the memory cells, of the surface area of the semiconductor substrate so that the second gate electrode is insulated by a second insulating layer from the semiconductor substrate, wherein said layer, brought into contact with the first insulating layer, of the first gate electrode and the layer, brought into contact with the second insulating layer, of the second gate electrode, are composed of materials different from each other.

Abstract: There is disclosed a semiconductor device having: a semiconductor substrate; a first gate electrode constructed of a multi-layered stack member provided in a memory region, formed with memory cells, of a surface area of the semiconductor substrate so that the first gate electrode is insulated by a first insulating layer from the semiconductor substrate; and a second gate electrode provided in a logic region, formed with a logic circuit for controlling at least the memory cells, of the surface area of the semiconductor substrate so that the second gate electrode is insulated by a second insulating layer from the semiconductor substrate, wherein said layer, brought into contact with the first insulating layer, of the first gate electrode and the layer, brought into contact with the second insulating layer, of the second gate electrode, are composed of materials different from each other.

Abstract: A semiconductor projection is formed on a semiconductor substrate of the first conductivity type and has a semiconductor layer of the first conductivity type. The semiconductor projection has a top surface and side surfaces. A gate electrode is formed above at least the side surfaces of the semiconductor projection. Source and drain regions are formed in the side surfaces of the semiconductor projection on opposite sides of the gate electrode. First and second device isolation insulating films are formed on the semiconductor substrate on opposite sides of the semiconductor projection. A first impurity region is formed in the semiconductor substrate below the first device isolation insulating film. A second impurity region is formed in the semiconductor substrate below the second device isolation insulating film. The first and second impurity regions are in contact with each other in the semiconductor substrate below the semiconductor projection.

Abstract: MOSFETS are formed by implanting at least a portion of a semiconductor substrate with a depart of a first type to form a first well region, annealing the first well region, implanting the annealed first well region with nitrogen; forming a gate insulator above at least a portion of the first well region; and providing a gate electrode above the gate oxide and providing source/drain regions in the substrate below the gate oxide about the gate electrode.

Abstract: In a DRAM, a plurality of first MOSFETs are formed in a cell region on a semiconductor substrate based on the minimum design rule, and a first gate side-wall having a side-wall insulation film is formed on the side-wall portion of a first gate electrode of each of the first MOSFETs. At least one second MOSFET is formed in a peripheral circuit region on the semiconductor substrate, and a second gate side-wall having side-wall insulation films is formed on the side-wall portion of a second gate electrode of the second MOSFET. Both the first MOSFETs, which is capable of forming a fine contact hole self-aligned with the first gate electrode, and the second MOSFET, which is capable of sufficiently mitigating the parasitic resistance while suppressing the short channel effect, can be formed on the same substrate.

Abstract: A semiconductor device includes a semiconductor substrate, a gate electrode as formed over a surface of the substrate with a gate dielectric film interposed therebetween, source/drain layers formed in said semiconductor substrate to oppose each other with a channel region residing between these layers at a location beneath the gate electrode, the source/drain layers each having a low resistivity region and an extension region being formed to extend from this low resistivity region toward the channel region side and being lower in impurity concentration and shallower in depth than the low resistivity region, a first impurity-doped layer of a first conductivity type formed in the channel region between the source/drain layers, a second impurity-doped layer of a second conductivity type formed under the first impurity-doped layer, and a third impurity-doped layer of the first conductivity type formed under the second impurity-doped layer, wherein the first impurity-doped layer is equal or less in junction depth

Abstract: A semiconductor projection is formed on a semiconductor substrate of the first conductivity type and has a semiconductor layer of the first conductivity type. The semiconductor projection has a top surface and side surfaces. A gate electrode is formed above at least the side surfaces of the semiconductor projection. Source and drain regions are formed in the side surfaces of the semiconductor projection on opposite sides of the gate electrode. First and second device isolation insulating films are formed on the semiconductor substrate on opposite sides of the semiconductor projection. A first impurity region is formed in the semiconductor substrate below the first device isolation insulating film. A second impurity region is formed in the semiconductor substrate below the second device isolation insulating film. The first and second impurity regions are in contact with each other in the semiconductor substrate below the semiconductor projection.

Abstract: There is provided a MISFET which suppresses a short-channel effect in a deep submicron region and has a low parasitic resistance, a low parasitic capacitance, and a small drain junction leakage current. A shallow concave is formed in a channel forming portion and an extension region forming portion of a MISFET, shallow ion implantation for forming an extension region is performed to a bottom surface of the shallow concave. Deep ion implantation for forming a source/drain region is performed to a silicon substrate adjacent to the concave, and the position of a peak concentration of the shallow ion implantation is caused to coincide with the position of a peak concentration of the deep ion implantation, so that a MISFET which suppresses a short-channel effect and has a low source/drain parasitic resistance, a low source/drain parasitic capacitance, and a small drain junction leakage current generated by SALICIDE steps can be provided.