Abstract: A memory circuit includes: a bistable circuit (30) that stores data; nonvolatile elements (MTJ1, MTJ2) that store data written in the bistable circuit in a nonvolatile manner, and restore data stored in a nonvolatile manner into the bistable circuit; and a control unit that stores data written in the bistable circuit in a nonvolatile manner and cuts off a power supply to the bistable circuit when the period not to read data from or write data into the bistable circuit is longer than a predetermined time period, and does not store data written in the bistable circuit in a nonvolatile manner and makes the supply voltage for the bistable circuit lower than a voltage during the period to read data from or write data into the bistable circuit when the period not to read or write data is shorter than the predetermined time period.

Abstract: A transistor includes: a piezoresistor through which carriers conduct; a source that injects the carriers into the piezoresistor; a drain that receives the carriers from the piezoresistor; a piezoelectric material that is located so as to surround the piezoresistor and applies a pressure to the piezoresistor; and a gate that applies a voltage to the piezoelectric material so that the piezoelectric material applies a pressure to the piezoresistor.

Abstract: A memory circuit includes: a bistable circuit (30) that writes data; nonvolatile elements (MTJ1, MTJ2) that store the data written in the bistable circuit into the nonvolataole element in a nonvolatile manner, and restore the data stored in a nonvolatile manner into the bistable circuit; and a determining unit (50) that does not store the data written in the bistable circuit into the nonvolatile elements when the data in the bistable circuit is the same as the data in the nonvolatile elements, but stores the data in the bistable circuit into the nonvolatile elements when the data in the bistable circuit is not the same as the data in the nonvolatile elements.

Abstract: In order to transfer a signal for driving a high-side semiconductor power switch, a signal transfer device includes a transmitting circuit, a receiving circuit, and an insulating transformer provided between the transmitting circuit and the receiving circuit. In the insulating transformer, a secondary side of a set transformer part and a secondary side of a reset transformer part are magnetically coupled. The magnetic coupling direction is formed so that a secondary-side terminal of the transformer part and a secondary-side terminal of the transformer part can have polarities reverse to each other. Thus, it is possible to provide a signal transfer device for transferring a signal through an insulating transformer, in which occurrence of common-mode noise can be suppressed and a countermeasure circuit against the noise can be simplified.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: In a startup circuit, an error amplifier receives a target voltage in a startup period that is a terminal voltage with a shape of a slope generated by charging a capacitor for soft starting with a current from a constant current circuit. A detecting circuit monitors variation of the terminal voltage and blocks pulse from a logic circuit until the terminal voltage, which has been zero volts at the moment of startup, reaches a predetermined threshold value. In this period, the detecting circuit disables the function of the error amplifier. It is not until the terminal voltage VCS reaches the predetermined threshold value and the PWM pulse begins to be delivered that the error amplifier is enabled. At this moment, startup control begins based on the difference between the terminal voltage and the feedback signal. Therefore, the output voltage never rises abruptly.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: An abnormal voltage detecting device monitors abnormal decrease in monitoring voltage during a start up period of a voltage generating apparatus. The abnormal voltage detecting device comprises a level shift circuit that generates a reference voltage for a start up period by reducing, in a predetermined amount, voltage from a reference voltage for soft starting, and further comprises a three input comparator that receives a monitoring voltage, a reference voltage Vref, and the reference voltage for the start up period, and that reverses a logical output when the monitoring voltage is lower than the reference voltage Vref and the reference voltage for the start up period. An abnormality detecting signal is delivered when the logical output of the three input comparator is reversed, and operation of an output circuit is inhibited until the reference voltage for the start up period exceeds a predetermined start up determining voltage.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: A sensor signal output circuit includes: a buffer amplifier which amplifies an output of a temperature sensor; an operational amplifier which amplifies an output of the buffer amplifier; an oscillator which generates a triangular wave signal; and a comparator which compares the triangular wave signal with an output of the operational amplifier to generate a PWM signal. After an offset adjusting resistor of the operational amplifier is adjusted at first temperature, the amplitude of the triangular wave signal is set to adjust the pulse width of the PWM signal at the first temperature. After that, a gain adjusting resistor of the operational amplifier is set to adjust the pulse width of the PWM signal at a second temperature.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: A memory circuit includes: a bistable circuit (30) that stores data; nonvolatile elements (MTJ1, MTJ2) that store data written in the bistable circuit in a nonvolatile manner, and restore data stored in a nonvolatile manner into the bistable circuit; and a control unit that stores data written in the bistable circuit in a nonvolatile manner and cuts off a power supply to the bistable circuit when the period not to read data from or write data into the bistable circuit is longer than a predetermined time period, and does not store data written in the bistable circuit in a nonvolatile manner and makes the supply voltage for the bistable circuit lower than a voltage during the period to read data from or write data into the bistable circuit when the period not to read or write data is shorter than the predetermined time period.

Abstract: A memory circuit includes: a bistable circuit (30) that writes data; nonvolatile elements (MTJ1, MTJ2) that store the data written in the bistable circuit into the nonvolataole element in a nonvolatile manner, and restore the data stored in a nonvolatile manner into the bistable circuit; and a determining unit (50) that does not store the data written in the bistable circuit into the nonvolatile elements when the data in the bistable circuit is the same as the data in the nonvolatile elements, but stores the data in the bistable circuit into the nonvolatile elements when the data in the bistable circuit is not the same as the data in the nonvolatile elements.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: A driver circuit has a detector circuit including a high side detection transistor, a resistor, and a low side detection transistor connected to a high side output transistor and a low side output transistor. A clamping circuit converts a high voltage amplitude change signal generated at a connection point of the high side detection transistor and resistor to a signal clamped to a voltage range applied on the low side. An OR circuit outputs a signal taking the logical sum of an inverted control signal and an output of a low side first stage drive circuit. A level shifter circuit outputs a level-shifted signal of the OR circuit to a high side first stage drive circuit. A second OR circuit outputs a signal wherein the logical sum of an output signal of the clamping circuit and the control signal is inverted to the low side first stage drive circuit.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.

Abstract: An abnormal voltage detecting device monitors abnormal decrease in monitoring voltage during a start up period of a voltage generating apparatus. The abnormal voltage detecting device comprises a level shift circuit that generates a reference voltage for a start up period by reducing, in a predetermined amount, voltage from a reference voltage for soft starting, and further comprises a three input comparator that receives a monitoring voltage, a reference voltage Vref, and the reference voltage for the start up period, and that reverses a logical output when the monitoring voltage is lower than the reference voltage Vref and the reference voltage for the start up period. An abnormality detecting signal is delivered when the logical output of the three input comparator is reversed, and operation of an output circuit is inhibited until the reference voltage for the start up period exceeds a predetermined start up determining voltage.

Abstract: A voltage controlled switching element gate drive circuit makes it possible to suppress an occurrence of a malfunction, while suppressing surge voltage, surge current, and switching noise, when switching in a voltage controlled switching element. A gate drive circuit that supplies a gate voltage to the gate of a voltage controlled switching element, thus driving the voltage controlled switching element, includes a high potential side switching element and low potential side switching element connected in series, first variable resistors interposed between at least the high potential side switching element and a high potential power supply or the low potential side switching element and a low potential power supply, and a control circuit that adjusts the resistance values of the first variable resistors.