Abstract: A semiconductor relay includes: a substrate; a semiconductor layer of a direct transition type which is on the substrate and which has semi-insulating properties; a p-type semiconductor layer on at least part of the semiconductor layer; a first electrode; and a second electrode. The first electrode is electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer. The second electrode is spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, and the first electrode includes a first opening part.

Abstract: A nitride semiconductor device includes: a substrate; an n-type drift layer; a p-type blocking layer; a gate opening which penetrates through the blocking layer to the drift layer; an electron transport layer and an electron supply layer provided on an inner face of the gate opening; a gate electrode above the electron supply layer and covering the gate opening; a source opening penetrating through the electron supply layer and the electron transport layer to the blocking layer; a source electrode covering the source opening, the source electrode being connected to the electron supply layer, the electron transport layer, and the blocking layer; and a drain electrode on a side of the substrate opposite from a side on which the blocking layer is located. A bottom face of the gate electrode is closer to the drain electrode than a bottom face of the blocking layer is.

Abstract: Nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity above the substrate; a second nitride semiconductor layer of a second conductivity different from the first conductivity, above the first nitride semiconductor layer a first opening penetrating through the second nitride semiconductor layer; an electron transport layer and an electron supply layer disposed along inner surfaces of the first opening, in stated sequence from the substrate-side; a gate electrode above the electron supply layer, covering the first opening; a source electrode connected to the electron supply layer and the electron transport layer, at a position separated from the gate electrode; and a drain electrode on a surface of the substrate opposite to a surface on which the first nitride semiconductor layer is disposed. At least part of the second nitride semiconductor layer is fixed to a potential different from a potential of the source electrode.

Abstract: A motor with a speed reducer includes a motor (4) received in a motor housing (2), a speed reducer (5) received in the motor housing (2) and that is driven by receiving power from a motor shaft of the motor (4) and that reduces rotation of a rotor boss (43) and outputs the reduced rotation, and a drive shaft (7) received in the motor housing (2), connected to an output shaft (58) of the speed reducer (5) via a transmission belt (6) and that drives a driven body, wherein the rotor boss (43) and the output shaft (58) are disposed coaxially, and the output shaft (58) and the drive shaft (7) are disposed parallel in a radial direction.

Abstract: An unsaturated polyester resin composition includes an unsaturated polyester, a polymerizable monomer, a low profile agent, and aluminum hydroxide. The unsaturated polyester is a polymerized product of polybasic acid and polyhydric alcohol. The polybasic acid contains unsaturated polybasic acid, and the unsaturated polybasic acid is blended in an amount of 80 mol % or more relative to 100 mol % the polybasic acid. The low profile agent contains polyvinyl acetate, and the polyvinyl acetate is blended in an amount of 3 parts by mass or more and 10 parts by mass or less relative to 100 parts by mass of a total amount of the unsaturated polyester, polymerizable monomer, and low profile agent. The aluminum hydroxide is blended in an amount of 150 parts by mass or more and 300 parts by mass or less relative to 100 parts by mass of a total amount of the unsaturated polyester, polymerizable monomer, and low profile agent.

Abstract: A drying system includes a nozzle attached to an air supply duct of a drying chamber that blows out heated air inside the duct toward an object to be dried inside the chamber. The nozzle includes a horn-shaped inner-side surface made of pairs of first and second inner-side surfaces that respectively face each other in first and second directions, an opening width of the second surfaces in the second direction gradually increasing forward in a direction in which the air is blown and being 2 to 25 times inclusive larger than an opening width in the first direction. The drying system includes: the duct with the nozzles; a feeding device feeding air to the duct; and a heating device heats the fed air. The feeding device feeds air to the duct such that the air blown out from the nozzle spreads more in the first direction than in the second.

Abstract: According to one embodiment, a user detection system includes a camera, a boundary detector, a user detector and a controller. The camera is installed in a peripheral region of a door, and captures a running region when opening or closing the door and a region near the door. The boundary detector detects a boundary between a first structure and a second structure in the region near the door based on an image captured by the camera. The user detector detects whether there is a user in the running region based on a result detected by the boundary detector. The controller controls an open/close operation of the door based on a result detected by the user detector.

Abstract: A parasitic capacitance and a leak current in a nitride semiconductor device are reduced. For example, a 100 nm-thick buffer layer made of AlN, a 2 ?m-thick undoped GaN layer, and 20 nm-thick undoped AlGaN having an Al composition ratio of 20% are epitaxially grown in this order on, for example, a substrate made of silicon, and a source electrode and a drain electrode are formed so as to be in ohmic contact with the undoped AlGaN layer. Further, in the undoped GaN layer and the undoped AlGaN layer immediately below a gate wire, a high resistance region, the resistance of which is increased by, for example, ion implantation with Ar or the like, is formed, and a boundary between the high resistance region and an element region is positioned immediately below the gate wire.

Abstract: A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer of a first conductivity type; a second nitride semiconductor layer of a second conductivity type; an electron transport layer and an electron supply layer provided, in that order from a side on which the substrate is located, above the second nitride semiconductor layer and on an inner surface of a first opening; a gate electrode provided above the electron supply layer and covering the first opening; a source electrode provided in a second opening and connected to the second nitride semiconductor layer; a drain electrode; a third opening at an outermost edge part in a plan view of the substrate; and a potential fixing electrode provided in the third opening, the potential fixing electrode being connected to the second nitride semiconductor layer and in contact with neither the electron transport layer nor the electron supply layer.

Abstract: A nitride semiconductor device includes: a substrate having a first main surface and a second main surface; a first nitride semiconductor layer of a first conductivity type provided above the first main surface; a second nitride semiconductor layer of a second conductivity type provided above the first nitride semiconductor layer; a first opening which penetrates through the second nitride semiconductor layer to the first nitride semiconductor layer; an electron transport layer provided above the second nitride semiconductor layer and on an inner surface of the first opening; a gate electrode provided above the electron transport layer and covering the first opening; a source electrode connected to the second nitride semiconductor layer; a drain electrode provided on a second main surface-side of the substrate; and a high-resistance layer provided between the second nitride semiconductor layer and the electron transport layer in the first opening, the high-resistance layer including a nitride semiconductor.

Abstract: A semiconductor relay includes: a substrate; a semiconductor layer of a direct transition type which is on the substrate and which has semi-insulating properties; a p-type semiconductor layer on at least part of the semiconductor layer; a first electrode; and a second electrode. The first electrode is electrically connected to the semiconductor layer and in contact with the p-type semiconductor layer. The second electrode is spaced apart from the first electrode and at least partially in contact with one of the semiconductor layer and the substrate, and the first electrode includes a first opening part.

Abstract: A parasitic capacitance and a leak current in a nitride semiconductor device are reduced. For example, a 100 nm-thick buffer layer made of AlN, a 2 ?m-thick undoped GaN layer, and 20 nm-thick undoped AlGaN having an Al composition ratio of 20% are epitaxially grown in this order on, for example, a substrate made of silicon, and a source electrode and a drain electrode are formed so as to be in ohmic contact with the undoped AlGaN layer. Further, in the undoped GaN layer and the undoped AlGaN layer immediately below a gate wire, a high resistance region, the resistance of which is increased by, for example, ion implantation with Ar or the like, is formed, and a boundary between the high resistance region and an element region is positioned immediately below the gate wire.

Abstract: A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.

Abstract: A nitride semiconductor device includes a substrate; a first nitride semiconductor layer above the substrate; a block layer above the first nitride semiconductor layer; a first opening penetrating through the block layer; an electron transit layer and an electron supply layer provided sequentially above the block layer and along an inner surface of the first opening; a gate electrode provided above the electron supply layer to cover the first opening; a second opening penetrating through the electron supply layer and the electron transit layer; a source electrode provided in the second opening; and a drain electrode. When the first main surface is seen in a plan view, (i) the first opening and the source electrode each are elongated in a predetermined direction, and (ii) at least part of an outline of a first end of the first opening in a longitudinal direction follows an arc or an elliptical arc.

Abstract: According to one embodiment, an elevator passenger detection system comprises an image capturing unit, a detection area setting unit, and a detection processing unit. The image capturing unit captures an image in a predetermined range including a vicinity of a doorway at which a door is opened or closed, from an inside of a car. The detection area setting unit sets a detection area on a front return panel provided on at least one of sides of a doorway of the car, on the captured image obtained by the image capturing unit. The detection processing unit detects presence of a passenger or an object, based on the image in the detection area set by the detection area setting unit.

Abstract: According to one embodiment, an image detection system includes an imaging apparatus, an edge extraction unit, a specific-edge extraction unit, a candidate area extraction unit, and a to-be-detected area determination unit. The edge extraction unit extracts edges each representing a boundary line between areas with different features. The specific-edge extraction unit extracts specific edges including at least remaining edges present in background image and input image. The candidate area extraction unit extracts candidate areas for a preset area to be detected. The to-be-detected area determination unit determines the area to be detected from candidate areas extracted.

Abstract: A circulation channel circularly supplying air heated by a burner is connected to a drying chamber into which a painted workpiece is supplied. The circulation channel includes a flame holding cylinder surrounding a flame of the burner and a casing surrounding the flame holding cylinder from outside and protrudes further than the flame holding cylinder toward a front end side, opposite to a side of the burner, of the flame holding cylinder. The casing includes a low temperature air inlet port that introduces low temperature air from outside into the casing, an exhaust port that exhausts high temperature air heated by the burner and the low temperature air to the circulation channel, and a mixing mechanism that is formed in the casing and mixes the high temperature air and the low temperature air before the high temperature air and the low temperature air are exhausted from the exhaust port.

Abstract: A semiconductor device includes: a substrate; a first nitride semiconductor layer disposed on the substrate; a second nitride semiconductor layer disposed on the first nitride semiconductor layer; a first opening penetrating the second nitride semiconductor layer; an electron transit layer and an electron supply layer which are formed along an upper surface of the second nitride semiconductor layer and a recessed surface of the first opening; a gate electrode disposed above the electron supply layer; a second opening penetrating the electron supply layer and the electron transit layer; a source electrode disposed to cover the second opening and electrically connected to the second nitride semiconductor layer; and a drain electrode disposed on a back surface of the substrate. The electron supply layer has a side surface formed along a side surface of the first opening. The gate electrode is not disposed on the side surface of the electron supply layer.

Abstract: A drying system includes a nozzle attached to an air supply duct of a drying chamber that blows out heated air inside the duct toward an object to be dried inside the chamber. The nozzle includes a horn-shaped inner-side surface made of pairs of first and second inner-side surfaces that respectively face each other in first and second directions, an opening width of the second surfaces in the second direction gradually increasing forward in a direction in which the air is blown and being 2 to 25 times inclusive larger than an opening width in the first direction. The drying system includes: the duct with the nozzles; a feeding device feeding air to the duct; and a heating device heats the fed air. The feeding device feeds air to the duct such that the air blown out from the nozzle spreads more in the first direction than in the second.