Abstract: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

Abstract: A defect detection method for a sensor in which a fixing member provides a seal between a sensor element and tubular metallic members, the method being capable of detecting breakage of a conductor caused by breakage of the element.

Abstract: A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

Abstract: Techniques for successively fabricating liquid crystal cells at low cost, using two resinous substrates wound on their respective rolls. A color filter and an electrode pattern are formed by printing techniques. Furthermore, an orientation film is printed. These manufacturing steps are carried out successively by rotating various rolls.

Abstract: A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.

Abstract: Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.

Abstract: An image display system comprises a first liquid crystal projector which projects a counterclockwise-rotating, circularly polarized light beam to form an image containing specific visual information on a screen and a second liquid crystal projector which projects a clockwise-rotating, circularly polarized light beam to form a white image on the same screen. When viewed with the naked eye, a combination of the two images projected on the screen appears totally white. A viewer wearing a dedicated viewing device equipped with an optical filter which allows counterclockwise-rotating, circularly polarized light to pass through can selectively see the image projected by the first liquid crystal projector.

Abstract: There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

Abstract: A gas sensor (100) includes an oxygen pump cell (135) and an oxygen-concentration detection cell (150) laminated together with a spacer (145) interposed therebetween. The spacer (145) has a gas detection chamber (145c) which faces electrodes (137, 152) of the cells (135, 150). The oxygen-concentration detection cell (150) produces an output voltage corresponding to the concentration of oxygen in the gas detection chamber (145c). The oxygen pump cell (135) pumps oxygen into and out of the measurement chamber (145c) such that the output voltage of the oxygen-concentration detection cell (150) becomes equal to a predetermined target voltage. A leakage portion mainly formed of zirconia is disposed between which electrically connects the oxygen-concentration detection cell (150) and the oxygen pump cell (135).

Abstract: There is provided a control apparatus for a gas sensor, which has a sensor element equipped with first and second oxygen pumping cells. The sensor control apparatus is configured to drive the first oxygen pumping cell to adjust the oxygen concentration of gas under measurement, drive the second oxygen pumping cell to produce a flow of electric current according to the amount of oxygen pumped out of the oxygen concentration adjusted gas by the second oxygen pumping cell, perform specific drive control to control the amount of oxygen pumped by the second oxygen pumping cell to a predetermined level after startup of the sensor element and before the application of the drive voltage between the electrodes of the second oxygen pumping cell.

Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

Abstract: In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNy is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1×1015 to 1×1019 cm?3 and hydrogen at a concentration of 2×1019 to 5×1021 cm?3.

Abstract: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the o electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

Abstract: In a structure in which six active matrix regions 103 to 108 are integrated on one glass substrate, horizontal scanning control circuits 101 and 102 are commonly disposed for the respective active matrix regions 103 to 105 and 106 to 108. Then the horizontal scanning control circuits 101 and 102 are operated at different timings, and images formed by the active matrix regions 103 to 105 and 106 to 108 are synthesized and projected. With this operation, the horizontal scanning frequency required for one horizontal scanning control circuit can be made half of the horizontal scanning frequency of the display screen.

Abstract: A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

Abstract: In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the matrix region are added with a metal element for promoting the crystallization of silicon at a concentration of 1×1016 to 5×1019 cm?3, no metal element is added to the active region of the TFTs for the matrix region. The channel forming regions of at least a part of the TFTs constituting the peripheral circuit and the channel forming regions of the TFTs for the matrix region are formed by a silicon semiconductor thin film having a monodomain structure.

Abstract: A sensor control apparatus is disclosed, including a preliminary control for supplying a constant current to a second oxygen pump cell of a gas sensor for a constant period of time so as to control to a constant level the amount of oxygen pumped out from a second measurement chamber (S40 to S50). At the beginning of drive control (S55 to S80), oxygen is pumped back into the second measurement chamber. During the pumping back operation, an NOX concentration correspondence value has a large time course change and is not stable. The NOX concentration correspondence value is corrected using correction data common among gas sensors, wherein the timing for applying the correction data is adjusted by making use of an application time determined in accordance with individual differences of each gas sensor.

Abstract: An anomaly diagnosing apparatus and method for a gas sensor which includes a heater control section; a measurement section which outputs a detection signal for detecting an internal resistance of the gas sensor through a solid electrolyte via connection terminals and the electrodes within the gas sensor and which measures the internal resistance of the gas sensor based on a response signal input via the connection terminals in response to the output of the detection signal; and a diagnosing section which heats the solid electrolyte by use of the heater control section, obtains, after the start of heating, a first time required to reach a first resistance and a second time required to reach a second resistance different from the first resistance, and determines whether or not the gas sensor is anomalous by comparing a predetermined threshold value and a ratio of the first to second times.

Abstract: An apparatus and method for individually detecting NO and NO2 concentrations as NOX components of an object gas. An NO concentration corresponding value is obtained from a first detection element not having a reduction section. An NO concentration corresponding value is obtained from a second detection element having a reduction section, and having an NO2/NO sensitivity ratio greater than that of the first detection element. The difference ?C between the NO concentration corresponding values of the two detection elements is obtained, and divided by the difference ?S between the NO2/NO sensitivity ratios of the two detection elements, whereby an NO2 concentration corresponding value is obtained. A value obtained by multiplying the NO2 concentration corresponding value by the NO2/NO sensitivity ratio of the second detection element is subtracted from the NO concentration corresponding value of the second detection element, whereby an NO concentration corresponding value is obtained.