Abstract: There is provided a gas sensor element for detecting the concentration of a specific gas component in gas under measurement, which includes a plate-shaped element body and a porous protection layer. The element body has, at one end portion thereof, a gas sensing portion formed with a solid electrolyte substrate and a pair of electrodes. The porous protection layer has a porous structure formed of ceramic particles and surrounds at least the circumference of the one end portion of the element body. In the present invention, the porous protection layer has an inner region, an intermediate region and an outer region laminated together in order of mention from the element body toward the outside. The intermediate region has a porosity lower than those of the inner and outer regions. There is also provided a gas sensor with such a gas sensor element.

Abstract: In a structure in which six active matrix regions 103 to 108 are integrated on one glass substrate, horizontal scanning control circuits 101 and 102 are commonly disposed for the respective active matrix regions 103 to 105 and 106 to 108. Then the horizontal scanning control circuits 101 and 102 are operated at different timings, and images formed by the active matrix regions 103 to 105 and 106 to 108 are synthesized and projected. With this operation, the horizontal scanning frequency required for one horizontal scanning control circuit can be made half of the horizontal scanning frequency of the display screen.

Abstract: A sensor control device for controlling a current application state of a gas sensor element when measuring a specific gas component concentration in a gas to be measured using the gas sensor element, which sensor control device includes: at least one cell having a solid electrolyte body and a pair of electrodes; a sensor heating unit as defined herein; an oxygen reference pole generating unit as defined herein; a damage avoidance time elapse determining unit as defined herein; and a reference generation current application permitting unit as defined herein.

Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

Abstract: A display device of the present invention includes a thin film transistor in a pixel region formed over a substrate, the thin film transistor including an active layer and a gate electrode with a gate insulating film interposed between the active layer and the gate electrode, a silicon nitride film formed over the thin film transistor, a resin film formed over the silicon nitride film, an inorganic insulating film formed over the resin film; a metal layer formed over the substrate; and a sealing material formed over the metal layer, wherein the sealing material covers a region where the resin film is not formed over the silicon nitride film.

Abstract: There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

Abstract: [Objective] To provide a gas sensor in which the insulation among conduction members is stably secured through stable maintenance of the insulation property of a separator provided within a sheath, whereby a normal output can be obtained from a detection element. [Means for Solution] Coating layers 64 and 69 of fluorine or a fluorine compound are formed on the surface of a separator 60 (a front separator 61 and a rear separator 66) of an NOx sensor. The coating layers 64 and 69 have water impermeability and water repellency. Even in the case where moisture contained in the atmosphere within a sheath 30 forms dew on the surface of the separator 60, the coating layers 64 and 69 having water impermeability prevent soaking of moisture into the separator 60, to thereby secure the insulation property of the separator 60.

Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

Abstract: There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

Abstract: A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 ?m or less in width, and allowing the metal to react with silicon.

Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.

Abstract: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

Abstract: Using a gas detection voltage Vs output from a terminal CU, a determination is made at to whether, after startup of an air-fuel ratio detection apparatus (1), a full-range air-fuel ratio sensor (10) has reached a semi-activated state in which a determination can be made as to whether the air-fuel ratio is on the rich or lean side based on a change in a gas detection signal Vic. After determining that the sensor has reached the semi-activated state, the signal Vic is compared with a threshold to determine whether the air-fuel ratio is on the rich or lean side. In the apparatus (1), the potential difference between an outer pump electrode of a pump cell (14) and a reference electrode of an oxygen concentration measurement cell (24) is obtained via a first differential amplification circuit (53) as the gas detection signal Vic, the signal Vic being highly responsive to a change in air-fuel ratio of exhaust gas.

Abstract: [Objective] An object is to provide a sensor control apparatus and a sensor-control-apparatus control method which can reduce variation in startup time among a plurality of times of execution of detection processing, in consideration of variation in output characteristic among a plurality of gas sensors. [Means for Solution] In a sensor control apparatus, before drive control (S55 to S80) is started, preliminary control is executed so as to supply a constant current to a second oxygen pump cell over a constant time, to thereby control to a constant level the amount of oxygen pumped from a second measurement chamber to the outside of the second measurement chamber (S40 to 50). The preliminary control is executed under control conditions of the sensor control apparatus which are determined for each gas sensor and are associated with the amount of oxygen pumped from the second measurement chamber to the outside thereof.

Abstract: A prismatic multilayer gas sensor element and method of making the same, the prismatic multilayer gas sensor element (1) having a substantially rectangular cross section, and including a gas-sensing cell portion (2) formed at a distal end portion of the prismatic gas sensor element (1); and a posterior lead portion (3) adjoining the gas-sensing cell portion (2). The longitudinal lateral surfaces of the posterior lead portion (3) are coated with a non-porous alumina layer (11), the non-porous alumina layer (11) having a multilayered structure including at least a joining layer (11a) and a surface layer (11b). The longitudinal lateral surface of the gas-sensing portion (2) is not coated with a non-porous alumina layer.

Abstract: There are disclosed TFTs having improved reliability. An interlayer dielectric film forming the TFTs is made of a silicon nitride film. Other interlayer dielectric films are also made of silicon nitride. The stresses inside the silicon nitride films forming these interlayer dielectric films are set between ?5×109 and 5×109 dyn/cm2. This can suppress peeling of the interlayer dielectric films and difficulties in forming contact holes. Furthermore, release of hydrogen from the active layer can be suppressed. In this way, highly reliable TFTs can be obtained.

Abstract: A charge coupled device is manufactured by using a crystalline silicon film that is formed by growing a crystal in parallel with a substrate by utilizing the nickel element with an amorphous silicon film used as a starting film. The crystal growth direction is made coincident with the charge transfer direction. As a result, the charge coupled device is given high charge transfer efficiency.

Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

Abstract: An object of the present invention is to provide a technology of reducing a nickel element in the silicon film which is crystallized by using nickel. An extremely small amount of nickel is introduced into an amorphous silicon film which is formed on the glass substrate. Then this amorphous silicon film is crystallized by heating. At this time, the nickel element remains in the crystallized silicon film. Then an amorphous silicon film is formed on the surface of the silicon film crystallized with the action of nickel. Then the amorphous silicon film is further heat treated. By carrying out this heat treatment, the nickel element is dispersed from the crystallized silicon film into the amorphous silicon film with the result that the nickel density in the crystallized silicon film is lowered.