Patents by Inventor Satoshi Teramoto

Satoshi Teramoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reflective liquid crystal display panel and device using same
    Patent number: 7675583
    Abstract: There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.
    Type: Grant
    Filed: November 21, 2005
    Date of Patent: March 9, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani, Jun Koyama, Satoshi Teramoto
  • DISPLAY DEVICE
    Publication number: 20100044714
    Abstract: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.
    Type: Application
    Filed: November 2, 2009
    Publication date: February 25, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • Liquid crystal display panel
    Patent number: 7667817
    Abstract: A laminated spacer portion formed by laminating various thin films that constitute thin-film transistors is disposed in peripheral driver circuits. As a result, even in a structure in which part of a sealing member is disposed above the peripheral driver circuits, pressure exerted from spacers in the sealing member is concentrated on the laminated spacer portion, whereby destruction of a thin-film transistor of the peripheral driver circuits can be prevented caused by the pressure from the sealing portion.
    Type: Grant
    Filed: July 24, 2007
    Date of Patent: February 23, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    Publication number: 20100041187
    Abstract: A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 ?m or less in width, and allowing the metal to react with silicon.
    Type: Application
    Filed: October 23, 2009
    Publication date: February 18, 2010
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuhiko TAKEMURA, Hongyong ZHANG, Satoshi TERAMOTO
  • Display device
    Patent number: 7646022
    Abstract: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: January 12, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Hongyong Zhang, Satoshi Teramoto
  • ACTIVE MATRIX DISPLAY AND FORMING METHOD THEREOF
    Publication number: 20090291612
    Abstract: An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved.
    Type: Application
    Filed: May 21, 2009
    Publication date: November 26, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei Yamazaki, Jun Koyama, Yuji Kawasaki, Toshimitsu Konuma, Satoshi Teramoto, Yoshiharu Hirakata
  • Hybrid circuit and electronic device using same
    Patent number: 7619282
    Abstract: There is disclosed a hybrid circuit in which a circuit formed of TFTs in integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are connected with the ceramic filter via the terminals. Thus, an RF module is constructed.
    Type: Grant
    Filed: February 28, 2006
    Date of Patent: November 17, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Teramoto
  • Thin film transistor incorporating an integrated capacitor and pixel region
    Patent number: 7615786
    Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: November 10, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuhiko Takemura, Satoshi Teramoto
  • SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
    Publication number: 20090261359
    Abstract: Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.
    Type: Application
    Filed: June 26, 2009
    Publication date: October 22, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Satoshi TERAMOTO
  • Semiconductor device and method for forming the same
    Patent number: 7602020
    Abstract: A thin film transistor device reduced substantially—in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film.
    Type: Grant
    Filed: September 18, 2006
    Date of Patent: October 13, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yasuhiko Takemura, Hongyong Zhang, Satoshi Teramoto
  • SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    Publication number: 20090242892
    Abstract: In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNy is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1×1015 to 1×1019 cm?3 and hydrogen at a concentration of 2×1019 to 5×1021 cm?3.
    Type: Application
    Filed: June 12, 2009
    Publication date: October 1, 2009
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Satoshi Teramoto
  • SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME
    Publication number: 20090200611
    Abstract: A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.
    Type: Application
    Filed: April 21, 2009
    Publication date: August 13, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuhiko Takemura, Satoshi Teramoto
  • Method of manufacturing a semiconductor device and manufacturing system thereof
    Patent number: 7569440
    Abstract: A method of manufacturing a semiconductor device, comprises the steps of: forming an amorphous silicon film on a substrate having an insulating surface; processing said amorphous silicon film by plasma of a gas that mainly contains hydrogen or helium; and giving an energy to said amorphous silicon film.
    Type: Grant
    Filed: May 23, 2005
    Date of Patent: August 4, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Teramoto, Naoto Kusumoto, Hideto Ohnuma
  • Semiconductor device having thin film transistor
    Patent number: 7557377
    Abstract: Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.
    Type: Grant
    Filed: August 26, 2004
    Date of Patent: July 7, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Teramoto
  • Method for manufacturing a semiconductor thin film
    Patent number: 7553716
    Abstract: A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.
    Type: Grant
    Filed: January 3, 2006
    Date of Patent: June 30, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Hisashi Ohtani, Akiharu Miyanaga, Satoshi Teramoto
  • Semiconductor device and fabrication method thereof
    Patent number: 7550765
    Abstract: Regions 106 which can be regarded as being monocrystalline are formed locally by irradiating with laser light, and at least the channel-forming region 112 is constructed using these regions. With thin-film transistors which have such a construction it is possible to obtain characteristics which are similar to those which employ monocrystals. Further, by connecting in parallel a plurality of such thin-film transistors it is possible to obtain characteristics which are effectively equivalent to those of a monocrystalline thin-film transistor in which the channel width has been increased.
    Type: Grant
    Filed: April 4, 2006
    Date of Patent: June 23, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Teramoto
  • SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    Publication number: 20090152631
    Abstract: A thin film transistor device reduced substantially in resistance between the source and the drain by incorporating a silicide film, which is fabricated by a process comprising forming a gate insulator film and a gate contact on a silicon substrate, anodically oxidizing the gate contact, covering an exposed surface of the silicon semiconductor with a metal, and irradiating an intense light such as a laser beam to the metal film either from the upper side or from an insulator substrate side to allow the metal coating to react with silicon to obtain a silicide film. The metal silicide layer may be obtained otherwise by tightly adhering a metal coating to the exposed source and drain regions using an insulator formed into an approximately triangular shape, preferably 1 ?m or less in width, and allowing the metal to react with silicon.
    Type: Application
    Filed: February 11, 2009
    Publication date: June 18, 2009
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yasuhiko TAKEMURA, Hongyong ZHANG, Satoshi TERAMOTO
  • Semiconductor device having SiOxNy film
    Patent number: 7547915
    Abstract: In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiOxNy is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1×1015 to 1×1019 cm?3 and hydrogen at a concentration of 2×1019 to 5×1021 cm?3.
    Type: Grant
    Filed: July 15, 2004
    Date of Patent: June 16, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Satoshi Teramoto
  • Active matrix display and forming method thereof
    Patent number: 7538849
    Abstract: An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved.
    Type: Grant
    Filed: January 12, 2004
    Date of Patent: May 26, 2009
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Jun Koyama, Yuji Kawasaki, Toshimitsu Konuma, Satoshi Teramoto, Yoshiharu Hirakata
  • Electronic Device and Method for Manufacturing the Same
    Publication number: 20090123643
    Abstract: An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms·cm?3 or less, carbon atoms at a concentration of 5×1018 atoms·cm?3 or less, and nitrogen atoms at a concentration of 7×1017 atoms·cm?3 or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.
    Type: Application
    Filed: October 23, 2008
    Publication date: May 14, 2009
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Satoshi Teramoto