Abstract: A method for forming a trench with a flared opening in a dielectric layer comprises providing a semiconductor substrate having a dielectric layer deposited thereon, depositing and patterning a photoresist layer atop the dielectric layer to form at least two photoresist structures, applying a plasma etch to define a flared trench profile in the photoresist structures, and applying a dry etch chemistry to etch a trench in the dielectric layer using the photoresist structures as a mask, wherein the flared trench profile is transferred from the photoresist structures to the dielectric layer. The dry etch chemistry may comprise an anisotropic plasma etch.