Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data. This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.

Abstract: A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks. A plurality of voltage supplies provide the voltages needed in the array and in the peripheral circuits. The power supplies are organized to match their power output to the power demand and to maintain a desired ratio of power production capability and decoupling capacitance. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. A powerup sequence circuit is provided to control the powerup of the chip.

Abstract: A memory device includes a memory array, a plurality of external lines, a command buffer, and control logic. The plurality of external lines is adapted for receiving an external command. The command buffer is adapted to store at least one command buffer entry. The control logic is coupled to the plurality of external lines and the command buffer. The control logic is adapted to access the memory array based on one of the command buffer entry and the external command. A method for providing commands to a memory device is provided. The memory device includes a command buffer, control logic and a memory array. The method includes reading a first buffered command from the command buffer. The first buffered command is provided to the control logic. The memory array is accessed based on the first buffered command.

Abstract: A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to data lines. A datapath is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mux, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks.

Abstract: A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to data lines. A datapath is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mux, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks.

Abstract: A semiconductor dynamic random-access memory device which embodies numerous features that collectively and/or individually prove beneficial and advantageous with regard to such considerations as have been described above. The disclosed memory device is a 64 Mbit dynamic random-access memory device which comprises eight substantially identical 8 Mbit partial array blocks or PABs, with each pair of PABs comprising a 16 Mbit quadrant of the device. Between the top two quadrants and between the bottom two quadrants are column blocks containg I/O read/write circuitry, column redundancy fuses, and column decode circuitry. Column select lines originate from the column blocks and extend right and left therefrom across the width of each quadrant. Each PAB in the memory array comprises eight substantially identical 1 Mbit sub-array blocks or SABs.

Abstract: A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to data lines. A datapath is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mux, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks.

Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data. This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.

Abstract: A structure and method to improve sense amplifier operation in memory circuits is provided. An illustrative method of the present invention includes taking the predecoded the row address signals (i.e. RA123<n>, LPHe<n>, LPHo<n>) that run down the rowdriver seams in a memory array (peripheral circuitry), and decoding those address signals in the sense amplifier gaps. The decoding is done to fire a signal that runs up the sense amplifier gap and biases the sense amplifier to fire in one direction or the other. Exemplary embodiments of the present invention are as follows. One method of the present invention includes putting two small n-channel transistors in parallel with each of the cross-coupled n-channel transistors in the n-sense amplifier. The gates of the two small n-channel transistors are initially low. Then, depending on the intended direction for biasing the sense amplifier, the gate of one of the small n-channel transistors would go to DVC2 until the p-sense amplifier fires.

Abstract: A semiconductor memory architecture is provided where isolation between adjacent memory cell pairs is accomplished by using an isolation transistor incorporating a programmable gate voltage to minimize subthreshold leakage. A testkey is provided internal to the memory chip that can be enabled while the memory chip is in a test mode. The testkey is capable of testing the isolation transistors for excessive leakage. The testkey is coupled to a translator, responsible for converting control signals from the testkey to isolation gate voltages. The testkey is used to determine whether the isolation transistor is leaky. The translator may adjust the isolation gate voltage to turn the transistors off harder. The present invention may further include an antifuse to permanently change the isolation gate voltage to a suitable value when the semiconductor leaves the testing mode.

Abstract: A memory cell stores a logical “1” at a reduced voltage of Vcc/2 with a cell-plate voltage of Vcc/4. A pair of complementary digit lines are initially biased to Vcc/2. Because the digit lines are biased to Vcc/2 and a “1” is stored as Vcc/2, no voltage delta appears on the digit line when the access transistor is turned on. A sense amplifier is biased to favor a logical “1” if there is no voltage differential between the digit lines in order for the data sense amplifier to correctly interpret having no voltage delta as a logical “1”. The row address is used to determine which digit line has the cell charge and which digit line is the reference. Using this approach, the gate voltages of the access device and of the isolation device do not have to be higher than Vcc. The use of lower cell voltage produces immediate gains in static refresh times due to the reduced leakage currents.

Abstract: A ROM is embedded within an array of DRAM cells by changing a single mask in a DRAM fabrication process to selectively short circuit the DRAM capacitor lower electrode to its own wordline to create a read-only “1” or to the wordline of an adjacent cell to create a read only “0”.

Abstract: A memory device includes a memory array, a plurality of external lines, a command buffer, and control logic. The plurality of external lines is adapted for receiving an external command. The command buffer is adapted to store at least one command buffer entry. The control logic is coupled to the plurality of external lines and the command buffer. The control logic is adapted to access the memory array based on one of the command buffer entry and the external command. A method for providing commands to a memory device is provided. The memory device includes a command buffer, control logic and a memory array. The method includes reading a first buffered command from the command buffer. The first buffered command is provided to the control logic. The memory array is accessed based on the first buffered command.

Abstract: A ROM is embedded within an array of DRAM cells by changing a single mask in a DRAM fabrication process to selectively short circuit the DRAM capacitor lower electrode to its own wordline to create a read-only “1” or to the wordline of an adjacent cell to create a read only “0”.

Abstract: A structure and method to improve sense amplifier operation in memory circuits is provided. An illustrative method of the present invention includes taking the predecoded the row address signals (i.e. RA123<n>, LPHe<n>, LPHo<n>) that run down the rowdriver seams in a memory array (peripheral circuitry), and decoding those address signals in the sense amplifier gaps. The decoding is done to fire a signal that runs up the sense amplifier gap and biases the sense amplifier to fire in one direction or the other. Exemplary embodiments of the present invention are as follows. One method of the present invention includes putting two small n-channel transistors in parallel with each of the cross-coupled n-channel transistors in the n-sense amplifier. The gates of the two small n-channel transistors are initially low. Then, depending on the intended direction for biasing the sense amplifier, the gate of one of the small n-channel transistors would go to DVC2 until the p-sense amplifier fires.

Abstract: A memory device includes a memory array, a plurality of external lines, a command buffer, and control logic. The plurality of external lines is adapted for receiving an external command. The command buffer is adapted to store at least one command buffer entry. The control logic is coupled to the plurality of external lines and the command buffer. The control logic is adapted to access the memory array based on one of the command buffer entry and the external command. A method for providing commands to a memory device is provided. The memory device includes a command buffer, control logic and a memory array. The method includes reading a first buffered command from the command buffer. The first buffered command is provided to the control logic. The memory array is accessed based on the first buffered command.

Abstract: A ROM is embedded within an array of DRAM cells by changing a single mask in a DRAM fabrication process to selectively short circuit the DRAM capacitor lower electrode to its own wordline to create a read-only "1" or to the wordline of an adjacent cell to create a read only "0".

Abstract: A memory cell stores a logical "1" at a reduced voltage of V.sub.CC /2 with a cell-plate voltage of V.sub.CC /4. A pair of complementary digit lines are initially biased to V.sub.CC /2. Because the digit lines are biased to V.sub.CC /2 and a "1" is stored as V.sub.CC /2, no voltage delta appears on the digit line when the access transistor is turned on. A sense amplifier is biased to favor a logical "1" if there is no voltage differential between the digit lines in order for the data sense amplifier to correctly interpret having no voltage delta as a logical "1". The row address is used to determine which digit line has the cell charge and which digit line is the reference. Using this approach, the gate voltages of the access device and of the isolation device do not have to be higher than V.sub.CC. The use of lower cell voltage produces immediate gains in static refresh times due to the reduced leakage currents.

Abstract: A structure and method to improve sense amplifier operation in memory circuits is provided. An illustrative method of the present invention includes taking the predecoded the row address signals (i.e. RA123<n>, LPHe<n>, LPHo<n>) that run down the rowdriver seams in a memory array (peripheral circuitry), and decoding those address signals in the sense amplifier gaps. The decoding is done to fire a signal that runs up the sense amplifier gap and biases the sense amplifier to fire in one direction or the other. Exemplary embodiments of the present invention are as follows. One method of the present invention includes putting two small n-channel transistors in parallel with each of the cross-coupled n-channel transistors in the n-sense amplifier. The gates of the two small n-channel transistors are initially low. Then, depending on the intended direction for biasing the sense amplifier, the gate of one of the small n-channel transistors would go to DVC2 until the p-sense amplifier fires.

Abstract: A method and memory circuits for increasing the data bandwidth per microprocessor operation cycle is provided. The memory circuits provide the additional bandwidth without additional input/output (I/O) pins or requiring decreased cycle times. Multiple bits of data are passed through a single input/output pin with each operation cycle. The multiple bits of data are stored in or retrieved from multiple memory cells in each cycle. The I/O pins carry analog signals which represent multiple values of binary data. This method of compressing data can be applied to any device that would benefit from the ability to transfer more data through a limited number of I/O pins.