Abstract: In described examples an integrated circuit (IC) has multiple layers of dielectric material overlying at least a portion of a surface of a substrate. A trench is etched through the layers of dielectric material to expose a portion the substrate to form a trench floor, the trench being surrounded by a trench wall formed by the layers of dielectric material. A metal perimeter band surrounds the trench adjacent the trench wall, the perimeter band being embedded in one of the layers of the dielectric material.

Abstract: In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.

Abstract: In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

Abstract: A method includes measuring a first signal from a set of pyroelectric devices at a first temperature and measuring a second signal from a set of piezoelectric devices at a first acceleration. The method also includes measuring a third signal from the set of pyroelectric devices at a second temperature and measuring a fourth signal from the set of piezoelectric devices at a second acceleration. The method further includes adjusting a piezoelectric calibration using the first, second, third, and fourth signals.

Abstract: In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Abstract: In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

Abstract: In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Abstract: For sensing pH of a fluid, a heating apparatus of a semiconductor die controls a temperature of the fluid to a first temperature. A first voltage of a gate of a floating gate transistor of the semiconductor die is measured while the temperature of the fluid is at the first temperature. Also, the heating apparatus controls the temperature of the fluid to a second temperature that is different than the first temperature. A second voltage of the gate is measured while the temperature of the fluid is at the second temperature. The pH of the fluid is determined based on the first and second voltages, the first temperature and the second temperature.

Abstract: In described examples, a microelectromechanical system (MEMS) is located on a substrate. A silicon nitride (SiN) layer on a portion of the substrate. A mechanical structure has first and second ends. The first end is embedded in the SiN layer, and the second end is cantilevered from the SiN layer.

Abstract: A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

Abstract: A method includes measuring a first signal from a set of pyroelectric devices at a first temperature and measuring a second signal from a set of piezoelectric devices at a first acceleration. The method also includes measuring a third signal from the set of pyroelectric devices at a second temperature and measuring a fourth signal from the set of piezoelectric devices at a second acceleration. The method further includes adjusting a piezoelectric calibration using the first, second, third, and fourth signals.

Abstract: In an integrated circuit, a metal-insulator-metal (MIM) diode includes: a first metallization structure level having a first metal layer; a first dielectric layer over the first metal layer; a metal contact or via on the first metal layer and extending through a portion of the first dielectric layer; and a second metallization structure level having a second metal layer; and a second dielectric layer over the second metal layer. The diode has a first electrode on the metal contact or via, a multilayer dielectric structure on the first electrode, and a second electrode between the multilayer dielectric structure and the second metal layer.

Abstract: In described examples an integrated circuit (IC) has multiple layers of dielectric material overlying at least a portion of a surface of a substrate. A trench is etched through the layers of dielectric material to expose a portion the substrate to form a trench floor, the trench being surrounded by a trench wall formed by the layers of dielectric material. A metal perimeter band surrounds the trench adjacent the trench wall, the perimeter band being embedded in one of the layers of the dielectric material.

Abstract: In described examples of a CMOS IC, an ultrasonic transducer having terminals is formed on a substrate of the IC. CMOS circuitry having ultrasonic signal terminals is formed on the substrate. At least one metal interconnect layer overlies the ultrasonic transducer and the CMOS circuitry. The at least one metal interconnect layer connects the CMOS circuitry ultrasonic signal terminals to the terminals of the ultrasonic transducer.

Abstract: A piezoelectric sensor with: (i) a capacitive element, comprising piezoelectric material; (ii) a pre-conditioning circuit, comprising circuitry for establishing a polarization of the capacitive element in a polarizing mode; and (iii) signal amplification circuitry for providing a piezoelectric-responsive output signal, in response to charge across the capacitive element in a sensing mode.

Abstract: In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Abstract: In described examples of an integrated circuit (IC) there is a substrate of semiconductor material having a first region with a first transistor formed therein and a second region with a second transistor formed therein. An isolation trench extends through the substrate and separates the first region of the substrate from the second region of the substrate. An interconnect region having layers of dielectric is disposed on a top surface of the substrate. A dielectric polymer is disposed in the isolation trench and in a layer over the backside surface of the substrate. An edge of the polymer layer is separated from the perimeter edge of the substrate by a space.

Abstract: In an integrated circuit, a metal-insulator-metal (MIM) diode includes: a first metallization structure level having a first metal layer; a first dielectric layer over the first metal layer; a metal contact or via on the first metal layer and extending through a portion of the first dielectric layer; and a second metallization structure level having a second metal layer; and a second dielectric layer over the second metal layer. The diode has a first electrode on the metal contact or via, a multilayer dielectric structure on the first electrode, and a second electrode between the multilayer dielectric structure and the second metal layer.

Abstract: An acceleration change sensor includes a flexible member comprising extensions extending from a central portion. Piezoelectric capacitors are provided on respective extensions. A proof mass is coupled to the flexible member and offset from each extension of the plurality of extensions.

Abstract: An integrated circuit (IC) including a semiconductor surface layer of a substrate including functional circuitry having circuit elements formed in the semiconductor surface layer configured together with a Metal-Insulator-Metal capacitor (MIM) capacitor on the semiconductor surface layer for realizing at least one circuit function. The MIM capacitor includes a multilevel bottom capacitor plate having an upper top surface, a lower top surface, and sidewall surfaces that connect the upper and lower top surfaces (e.g., a bottom plate layer on a three-dimensional (3D) layer or the bottom capacitor plate being a 3D bottom capacitor plate). At least one capacitor dielectric layer is on the bottom capacitor plate. A top capacitor plate is on the capacitor dielectric layer, and there are contacts through a pre-metal dielectric layer to contact the top capacitor plate and the bottom capacitor plate.