Patents by Inventor Scott Robert Summerfelt

Scott Robert Summerfelt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reference generator system and methods for reading ferroelectric memory cells using reduced bitline voltages
    Patent number: 6970371
    Abstract: Methods (200) and systems (108) are provided for reading data from ferroelectric memory cells (106) in which charge is removed from a sense amp input (SABL/SABLB) prior to application of a plateline signal (PL) to the target cell capacitor (CFE). Where the sense amp input (SABL/SABLB) is initially precharged to zero volts, the extraction of charge provides a negative voltage on the data bitline (BL/BLB) when the plateline signal (PL) is applied, allowing adequate voltage to be applied across the cell capacitor (CFE) together with reduced plateline voltages (PL).
    Type: Grant
    Filed: May 17, 2004
    Date of Patent: November 29, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Scott Robert Summerfelt, Hugh P. McAdams
  • Ferroelectric memory cell with angled cell transistor active region and methods for fabricating the same
    Patent number: 6967365
    Abstract: Ferroelectric memory cells and fabrication methods are provided in which the memory cell comprises a ferroelectric capacitor in a capacitor layer above a semiconductor body, and a cell transistor with first and second source/drains formed in an active region of the semiconductor body. The active region extends along a first axis in the semiconductor body, and the cell includes a gate electrically coupled with a wordline structure that extends along a second axis, wherein the first axis and the second axis are oblique.
    Type: Grant
    Filed: July 15, 2003
    Date of Patent: November 22, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Scott Robert Summerfelt, Katsushi Boku
  • Enhanced storage states in an memory
    Patent number: 6807080
    Abstract: A memory with mechanisms for enhancing storage states without boosting voltages to levels that damage storage cell structures. A storage cell according to the present teachings includes a storage structure capable of switching storage states. A memory according to the present teachings includes means for writing the storage cell by applying a first voltage to a first node of the storage structure and for applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: October 19, 2004
    Assignees: Agilent Technologies, Inc., Texas Instrument, Inc.
    Inventors: Jurgen Thomas Rickes, Hugh Pryor McAdams, Scott Robert Summerfelt
  • Enhanced storage states in an memory
    Publication number: 20030214830
    Abstract: A memory with mechanisms for enhancing storage states without boosting voltages to levels that damage storage cell structures. A storage cell according to the present teachings includes a storage structure capable of switching storage states. A memory according to the present teachings includes means for writing the storage cell by applying a first voltage to a first node of the storage structure and for applying a second voltage to a second node of the storage structure such that the first and second voltages have opposite polarities.
    Type: Application
    Filed: May 17, 2002
    Publication date: November 20, 2003
    Inventors: Jurgen Thomas Rickes, Hugh Pryor McAdams, Scott Robert Summerfelt