Patents by Inventor Sean Kang
Sean Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240105330Abstract: Systems and methods for measuring the fill level of sharps in sharps containers are described. The system includes sensors for detecting a fill level in a sharps container and communications systems for reporting a sharps container fill status to local personnel through portable computing devices and central monitoring systems. The systems and methods are designed to improve deployment and collection of the sharps containers and their contents.Type: ApplicationFiled: August 5, 2022Publication date: March 28, 2024Inventors: Volodimir Bondarenko, Sean Bellinger, Clemente Receno, Dan Gabbay, Alejandro Cabrera, Mookwan Kang
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Publication number: 20230298893Abstract: An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.Type: ApplicationFiled: May 26, 2023Publication date: September 21, 2023Inventors: Keith Tatseun WONG, Thomas Jongwan KWON, Sean KANG, Ellie Y. YIEH
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Patent number: 11705337Abstract: An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.Type: GrantFiled: November 26, 2019Date of Patent: July 18, 2023Assignee: APPLIED MATERIALS, INC.Inventors: Keith Tatseun Wong, Thomas Jongwan Kwon, Sean Kang, Ellie Y. Yieh
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Publication number: 20230223268Abstract: Embodiments of the present disclosure generally relate to a method for etching a film stack with high selectivity and low etch recipe transition periods. In one embodiment, a method for etching a film stack having stacked pairs of oxide and nitride layers is described. The method includes transferring a substrate having a film stack formed thereon into a processing chamber, providing a first bias voltage to the substrate, etching an oxide layer of the film stack while providing the first bias voltage to the substrate, providing a second bias voltage to the substrate, the second bias voltage greater than the first bias voltage, and etching a nitride layer of the film stack while providing the second bias voltage to the substrate.Type: ApplicationFiled: January 10, 2022Publication date: July 13, 2023Inventors: Sean KANG, Olivier LUERE, Kenji TAKESHITA, Sanghyuk CHOI, Mengnan ZOU, Zihao DING
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Patent number: 11495470Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly.Type: GrantFiled: April 29, 2021Date of Patent: November 8, 2022Assignee: Applied Materials, Inc.Inventors: Hailong Zhou, Sean Kang, Kenji Takeshita, Rajinder Dhindsa, Taehwan Lee, Iljo Kwak
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Publication number: 20220336222Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly.Type: ApplicationFiled: April 29, 2021Publication date: October 20, 2022Inventors: Hailong ZHOU, Sean KANG, Kenji TAKESHITA, Rajinder DHINDSA, Taehwan LEE, Iljo KWAK
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Patent number: 10847360Abstract: Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.Type: GrantFiled: May 25, 2017Date of Patent: November 24, 2020Assignee: Applied Materials, Inc.Inventors: Keith Tatseun Wong, Sean Kang, Srinivas D. Nemani, Ellie Y. Yieh
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Patent number: 10622214Abstract: Methods and systems relating to processes for treating a tungsten film on a workpiece including supporting the workpiece in a chamber, introducing hydrogen gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the tungsten film on the workpiece to the hydrogen gas while the pressure in the chamber is at least 5 atmospheres.Type: GrantFiled: May 25, 2017Date of Patent: April 14, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Keith Tatseun Wong, Thomas Jongwan Kwon, Sean Kang, Ellie Y. Yieh
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Publication number: 20200098574Abstract: An annealing system is provided that includes a chamber body that defines a chamber, a support to hold a workpiece and a robot to insert the workpiece into the chamber. The annealing system also includes a first gas supply to provide a hydrogen gas, a pressure source coupled to the chamber to raise a pressure in the chamber to at least 5 atmospheres, and a controller configured to cause the robot to transport a workpiece having a metal film thereon into the chamber, where the metal film contains fluorine on a surface or embedded within the metal film, to cause the first gas supply to supply the hydrogen gas to the chamber and form atomic hydrogen therein, and to cause the pressure source to raise a pressure in the chamber to at least 5 atmospheres while the workpiece is held on the support in the chamber.Type: ApplicationFiled: November 26, 2019Publication date: March 26, 2020Inventors: Keith Tatseun WONG, Thomas Jongwan KWON, Sean KANG, Ellie Y. YIEH
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Patent number: 10529603Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.Type: GrantFiled: March 4, 2019Date of Patent: January 7, 2020Assignee: Micromaterials, LLCInventors: Qiwei Liang, Srinivas D. Nemani, Adib M. Khan, Venkata Ravishankar Kasibhotla, Sultan Malik, Sean Kang, Keith Tatseun Wong
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Patent number: 10424487Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: GrantFiled: October 24, 2017Date of Patent: September 24, 2019Assignee: Applied Materials, Inc.Inventors: Jungmin Ko, Tom Choi, Junghoon Kim, Sean Kang, Mang-Mang Ling
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Publication number: 20190198367Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.Type: ApplicationFiled: March 4, 2019Publication date: June 27, 2019Inventors: Qiwei LIANG, Srinivas D. NEMANI, Adib M. KHAN, Venkata Ravishankar KASIBHOTLA, Sultan MALIK, Sean KANG, Keith Tatseun WONG
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Publication number: 20190122902Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: ApplicationFiled: October 24, 2017Publication date: April 25, 2019Applicant: Applied Materials, Inc.Inventors: Jungmin Ko, Tom Choi, Junghoon Kim, Sean Kang, Mang-Mang Ling
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Patent number: 10242908Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as an oxide footing. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: GrantFiled: November 14, 2016Date of Patent: March 26, 2019Assignee: Applied Materials, Inc.Inventors: Sean Kang, Jungmin Ko, Oliver Luere
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Publication number: 20180342396Abstract: Methods and systems relating to processes for treating a tungsten film on a workpiece including supporting the workpiece in a chamber, introducing hydrogen gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the tungsten film on the workpiece to the hydrogen gas while the pressure in the chamber is at least 5 atmospheres.Type: ApplicationFiled: May 25, 2017Publication date: November 29, 2018Inventors: Keith Tatseun Wong, Thomas Jongwan Kwon, Sean Kang, Ellie Y. Yieh
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Publication number: 20180342384Abstract: Methods and systems relating to processes for treating a silicon nitride film on a workpiece including supporting the workpiece in a chamber, introducing an amine gas into the chamber and establishing a pressure of at least 5 atmospheres, and exposing the silicon nitride film on the workpiece to the amine gas while the pressure in the chamber is at least 5 atmospheres.Type: ApplicationFiled: May 25, 2017Publication date: November 29, 2018Inventors: Keith Tatseun Wong, Sean Kang, Srinivas D. Nemani, Ellie Y. Yieh
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Publication number: 20180258533Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.Type: ApplicationFiled: December 7, 2017Publication date: September 13, 2018Inventors: Qiwei Liang, Srinivas D. Nemani, Adib M. Khan, Venkata Ravishankar Kasibhotla, Sultan Malik, Sean Kang, Keith Tatseun Wong
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Patent number: 10062575Abstract: Processing methods may be performed to form recesses in a semiconductor substrate. The methods may include oxidizing an exposed silicon surface on a semiconductor substrate within a processing region of a semiconductor processing chamber. The methods may include forming an inert plasma within the processing region of the processing chamber. Effluents of the inert plasma may be utilized to modify the oxidized silicon. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified oxidized silicon from the semiconductor substrate.Type: GrantFiled: September 9, 2016Date of Patent: August 28, 2018Assignee: Applied Materials, Inc.Inventors: Tom Choi, Jungmin Ko, Sean Kang
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Patent number: 10049927Abstract: Aspects of the disclosure include methods of treating a substrate to remove one or more of voids, seams, and grain boundaries from interconnects formed on the substrate. The method includes heating the substrate in an environment pressurized at supra-atmospheric pressure. In one example, the substrate may be heated in a hydrogen-containing atmosphere.Type: GrantFiled: October 24, 2016Date of Patent: August 14, 2018Assignee: Applied Materials, Inc.Inventors: Bencherki Mebarki, Sean Kang, Keith Tatseun Wong, He Ren, Mehul B. Naik, Ellie Y. Yieh, Srinivas D. Nemani
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Publication number: 20180138075Abstract: Processing methods may be performed to remove unwanted materials from a substrate, such as an oxide footing. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.Type: ApplicationFiled: November 14, 2016Publication date: May 17, 2018Applicant: Applied Materials, Inc.Inventors: Sean Kang, Jungmin Ko, Oliver Luere