Abstract: A charged particle beam drawing apparatus includes: a stage configured to support a specimen as a drawing target; and an airtight drawing chamber formed into a box shape provided with a side wall and a bottom plate, and configured to house the stage. The bottom plate includes: multiple support portions connected to the side wall and configured to support the stage; and a curved portion connected to the support portions and having a convex shape curved outward.

Abstract: A charged particle beam drawing apparatus includes: a stage configured to support a specimen as a drawing target; and an airtight drawing chamber formed into a box shape provided with a side wall and a bottom plate, and configured to house the stage. The bottom plate includes: multiple support portions connected to the side wall and configured to support the stage; and a curved portion connected to the support portions and having a convex shape curved outward.

Abstract: A charged particle beam drawing apparatus includes: a stage configured to support a specimen as a drawing target; and an airtight drawing chamber formed into a box shape provided with a side wall and a bottom plate, and configured to house the stage. The bottom plate includes: multiple support portions connected to the side wall and configured to support the stage; and a curved portion connected to the support portions and having a convex shape curved outward.

Abstract: A plurality of wafers are loaded on a susceptor installed in a reaction chamber, and the wafers are heated, and process gas is fed from a plurality of stages of openings formed in a gas feed nozzle installed so as to pass through the center of the susceptor, the process gas is fed obliquely downward from the uppermost openings, and the process gas feeding directions are changed to the reaction chamber relatively. The thickness of deposits on the wall of the reaction chamber is suppressed, the maintenance cycle of film forming equipment is extended, and the throughput can be improved.

Abstract: A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.