Abstract: A method for driving a self-scanning light-emitting element array, in which a power consumed in a write signal limiting resistor provided outside a chip to suppress a temperature rising of an optical writing head. The difference between High-level and Low-level in a circuitry in the driver circuit for controlling the light-emitting portion in the chip is set so as to be lower than the difference between High-level and Low-level in a circuitry in the driver circuit for controlling the transfer portion in the chip. A power consumed in a write signal limiting resistor provided outside the chip may be decreased to suppress the temperature rising of the optical writing head.

Abstract: A self-scanning light-emitting device is provided in which the number of bonding pads can be decreased, i.e. 2 or 3. The device comprises an array of a plurality of three-terminal light-emitting elements; electrical means having unidirectional characteristic to voltage or current for connecting the control electrodes of neighboring light-emitting elements to each other; two clock pulse lines for applying two-phase clock pulses alternately to one of two terminals except the control electrode of each light-emitting element; and a power supply line connected to each of the control electrodes of the light-emitting elements via a load resistor, respectively. The resistance of the load resistor connected to the light-emitting element to be turned on at first is selected to be smaller than that of other resistors. As a result, the bonding pad for the start pulse may be omitted.

Abstract: Dihydropyridine derivatives of the following formula, analogs thereof and pharmaceutically acceptable salts thereof have an activity of selectively inhibiting the action of N-type calcium channel. They are used as remedies for various diseases relating to the N-type calcium channel.

Abstract: A dihydropyridine compound of the formula: 1

Abstract: A dimensional light-emitting element array device is provided. The device comprises a light-emitting element array in which a plurality of three-terminal light-emitting thyristors are arranged in X-Y matrix of N rows×M columns; a plurality of row lines to each thereof an anode of the thyristor on a corresponding row of the matrix is connected; one clock line to which all the row lines are connected; a plurality of row address lines to each thereof a gate of the thyristor on a corresponding row and a 0th column of the matrix is connected; and a plurality of column address lines to each thereof a gate of the thyristor on a corresponding column of 1st-Mth columns of the matrix is connected.

Abstract: A dimensional light-emitting element array device is provided. The device comprises a light-emitting element array in which a plurality of three-terminal light-emitting thyristors are arranged in X-Y matrix of N rows×M columns; a plurality of row lines to each thereof an anode of the thyristor on a corresponding row of the matrix is connected; one clock line to which all the row lines are connected; a plurality of row address lines to each thereof a gate of the thyristor on a corresponding row and a 0th column of the matrix is connected; and a plurality of column address lines to each thereof a gate of the thyristor on a corresponding column of 1st-Mth columns of the matrix is connected.

Abstract: A process of manufacture has the steps of forming a metal film on the insulating substrate, applying photoresist on the metal film, exposing the photoresist to light to form a photoresist pattern by developing, etching the metal film with the photoresist pattern as an etching mask, forming an insulating film on the insulating substrate by making the insulating substrate with the photoresist pattern contact a liquid-phase deposition treatment liquid, and removing the photoresist pattern or the combination of the photoresist pattern and the insulating film thereon. Through these steps, the metal film for use as the metal wiring to effect contact with the electrode of the TFT is buried in the surface of the insulating substrate. Consequently, the resistance of the metal wiring can greatly be reduced. Thereby, it is produced a thin film transistor capable of rendering an large area, large capacity display possible and free from a difference in level.

Abstract: A self-scanning, light-emitting device comprises an array of cells or blocks each having a self-scanning transfer element and a light-emitting element. Turn-on state of the transfer element is transferred to the subsequent transfer element in synchronism with clock pulses. Each light-emitting element is connected to the corresponding transfer element so as to emit light upon supplying current under an ON state of the transfer element. The light-emitting array generates a light image in accordance with a light emission current.