Abstract: A display device includes pixels connected to scan lines and data lines, each pixel including a driving transistor and at least one light emitting element, and a timing controller configured to generate output data using external input data. The timing controller includes a first compensator configured generate first data by correcting the external input data using at least one of optical measurement information, a threshold voltage of each of the driving transistors, mobility information, dimming information, and temperature information, and an afterimage compensator configured to generate second data based on age information of each light emitting element and the first data, generate third data based on a current amount corresponding to the first data and a current amount corresponding to the second data, and generate the age information by accumulating the third data.

Abstract: Disclosed herein are an apparatus and method for a multi-cloud service platform. The apparatus includes one or more processors and executable memory for storing at least one program executed by the one or more processors. The at least one program may receive a service request from a user client device, generate a multi-cloud infrastructure service using multiple clouds in response to the service request, make the multiple clouds interoperate with mufti-cloud infrastructure in order to provide the multi-cloud infrastructure service, and generate a multi-cloud application runtime environment corresponding to the multi-cloud infrastructure service.

Abstract: A silicon-carbon containing electrode material includes a porous carbon structure including pores, and a silicon-containing coating formed on the porous carbon structure. A volume ratio of mesopores is 70% or more based on a total pore volume of the porous carbon structure. A weight ratio of silicon is 30 wt % or more based on a total weight of the electrode material. A high-capacity secondary battery is effectively implemented by using silicon-carbon containing electrode material.

Abstract: Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.

Abstract: A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.

Abstract: A resolution controller for a stretchable display includes a resolution-setting multiplexer module to receive a resolution selecting signal and to apply a gate in panel (GIP) selecting signal, in response to the resolution selecting signal, and a GIP module configured to generate a gate driving signal in response to the GIP selecting signal applied by the resolution-setting multiplexer module, and apply the gate driving signal to a pixel driving flexible printed circuit board (FPCB) of the stretchable display to drive an open pixel depending on a stretched state of the stretchable display.

Abstract: A secondary battery includes an electrode assembly having a positive electrode provided with a positive electrode tab, a separator, and a negative electrode provided with a negative electrode tab, the positive electrode, the separator, and the negative electrode being wound, the electrode assembly having a core part at a center thereof; a can configured to receive the electrode assembly therein, the negative electrode tab being connected to the can; a cap assembly coupled to an opening of the can, the positive electrode tab being connected to the cap assembly; and a reinforcing member provided on an end of the separator exposed beyond the positive electrode or the negative electrode to prevent heat of the positive electrode tab or the negative electrode tab from being transferred to the separator.

Abstract: A monoclonal antibody or an antigen-binding fragment thereof according to an embodiment of the present invention can bind to lymphocyte-activation gene 3 (LAG-3) including a heavy chain variable region and a light chain variable region and inhibit the activity thereof. Thus it is expected to be useful for the development of immunotherapeutic agents for various disorders that are associated with LAG-3.

Abstract: A plasticizer composition including a citrate-based material and an epoxidized oil, and the plasticizer composition capable of maintaining an excellent plasticization efficiency and providing an improved mechanical properties and stress resistance when compared with conventional phthalate-based plasticizer products.

Abstract: Disclosed herein are an apparatus and method for mutual authentication of quantum entities based on Measurement-Device-Independent Quantum Key Distribution (MDI-QKD). The method may include configuring a quantum input form based on an authentication key shared in advance with a counterpart entity, applying polarization modulation to the configured quantum input form, transmitting the quantum input form to which polarization modulation is applied to a quantum measurement device, and authenticating the counterpart entity by checking whether the counterpart entity configures a quantum input form according to the shared authentication key using a measurement result and information about polarization modulation.

Abstract: Disclosed are methods and apparatuses for transmitting data using a random access procedure in a communication system. An operation method of a terminal in a communication system includes transmitting a first MsgA including an RA preamble #i and a payload to a base station; receiving, from the base station, a MsgB including information indicating that an RA preamble #k is reserved; and transmitting a second MsgA including the RA preamble #k and data to the base station in a preamble reservation period associated with the RA preamble #k.

Abstract: Provided are a hyperparameter optimizer and method for optimizing hyperparameters and a spiking neural network processing unit. The optimizer includes a statistical analyzer configured to receive training data and perform statistical analysis on the training data, an objective function generator configured to generate hyperparameter-specific objective functions by using a statistical analysis value of the statistical analyzer, and an optimal hyperparameter selector configured to select optimal hyperparameters according to certain rules on the basis of the hyperparameter-specific objective functions.

Abstract: A semiconductor device including a substrate, a wiring pattern in the substrate, a passivation layer on the substrate, the passivation layer and the substrate including a first recess penetrating a part of each of the passivation layer and the substrate and extending toward the wiring pattern, a post connected to the wiring pattern and including a first portion within the first recess and a second portion on the first portion and protruding from a top surface of the passivation layer, a signal bump including a seed layer on the post, a lower bump on the seed layer, and an upper bump on the lower bump, and a heat transfer bump apart from the signal bump, electrically insulated from the wiring pattern, and including another seed layer on the passivation layer, another lower bump on the another seed layer, and another upper bump on the another lower bump may be provided.

Abstract: Disclosed is a device for high-temperature gas including one or more partitions and three-dimensional lattice structures of different shapes, wherein different spaces formed by the partitions include the three-dimensional lattice structures of different shapes.

Abstract: A semiconductor package is provided. The semiconductor package includes a first semiconductor substrate, a first semiconductor element layer on an upper surface of the first semiconductor substrate, a first wiring structure on the first semiconductor element layer, a first connecting pad connected to the first wiring structure, a first test pad connected to the first wiring structure, a first front side bonding pad connected to the first connecting pad and including copper (Cu), and a second front side bonding pad connected to the first front side bonding pad and including copper (Cu) which has a nanotwin crystal structure different from a crystal structure of copper (Cu) included in the first front side bonding pad, wherein a width of the first front side bonding pad in the horizontal direction is different from a width of the second front side bonding pad in the horizontal direction.

Abstract: A wafer bonding apparatus is provided includes a lower support plate configured to structurally support a first wafer on an upper surface of the lower support plate; a lower structure adjacent to the lower support plate and movable in a vertical direction that is perpendicular to the upper surface of the lower support plate, an upper support plate configured to structurally support a second wafer on a lower surface of the lower support plate, and an upper structure adjacent to the upper support plate and movable in the vertical direction.

Abstract: A fusion protein for cancer treatment and a use thereof is disclosed. The fusion protein for preventing or treating cancer of the present invention includes a fusion polypeptide including: an antibody or fragment thereof binding to a tumor-associated antigen; a linker; and a NK cell-inducing protein of CXCL16, wherein a co-administration of the fusion polypeptide along with the NK cells, an immunocyte therapeutic agent, greatly increases an influx of the NK cells into cancer expressing a certain antigen, thereby having a remarkable effect on preventing or treating cancer.

Abstract: A semiconductor package that include first and second semiconductor chips bonded together, wherein the first semiconductor chip includes a first semiconductor substrate, a first semiconductor element layer and a first wiring structure sequentially stacked on a first surface of the first semiconductor substrate, first connecting pads and first test pads on the first wiring structure, and first front-side bonding pads, which are connected to the first connecting pads, wherein the second semiconductor chip includes a second semiconductor substrate, a second semiconductor element layer and a second wiring structure sequentially stacked on a third surface of the second semiconductor substrate, and first back-side bonding pads bonded to the first front-side bonding pads on the fourth surface of the second semiconductor substrate, and wherein the first test pads are not electrically connected to the second semiconductor chip.

Abstract: A method for wafer planarization includes forming a second insulating layer and a polishing layer on a substrate having a chip region and a scribe lane region; forming a first through-hole in the polishing layer in the chip region and the scribe lane region and a second through-hole in the second insulating layer in the chip region, wherein the second through-hole and the first through-hole meet in the chip region; forming a pad metal layer inside the first through-hole and the second through-hole and on an upper surface of the polishing layer; and polishing the polishing layer and the pad metal layer by a chemical mechanical polishing (CMP) process to expose an upper surface of the second insulating layer in the chip region and the scribe lane region.

Abstract: A semiconductor laser device may include a first cladding on a substrate, an optical waveguide on the first cladding, a laser light source chip on the optical waveguide to generate a laser beam, a first adhesive layer between the optical waveguide and the laser light source chip, and a second adhesive layer covering a sidewall of the laser light source chip.