Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

Abstract: An image sensor may include an image sensor pixel array, row control circuitry, and column readout circuitry. Pixels in the image sensor pixel array may each include multiple photosensitive elements disposed around one another. Each pixel may also include first and second in-pixel memory configured to store corresponding overflow charge from first and second photosensitive elements, respectively. The first photosensitive element may be a large photodiode while the second photosensitive element may be a small photodiode. If desired, the large photodiode may be implemented as a set of split but interconnected photodiodes. If desired, each pixel may also include a medium photodiode.

Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

Abstract: A high dynamic range imaging pixel may include a photodiode, an overflow node, and an overflow path between the photodiode and the overflow node. The imaging pixel may have an overlapping overflow integration time and photodiode integration time. The overflow integration time may be shorter than the photodiode integration time. At the end of the overflow integration time, an uncorrelated double sample of overflow charge may be obtained. The capacity of the photodiode is then increased and charge continues to accumulate in the photodiode until the conclusion of the photodiode integration time. A correlated double sample of charge from the photodiode may then be obtained. For additional increases to dynamic range, the overflow charge may be repeatedly sampled and reset throughout the overflow integration time, effectively increasing the overflow capacity. The overflow samples may be integrated on a buffer to track the total overflow charge.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: An image sensor may include an array of image sensor pixels. Each pixel in the array may be a global shutter pixel having a first charge storage node configured to capture scenery information and a second charge storage node configured to capture background information generated as a result of parasitic light and dark noise signals. The first and/or second charge storage nodes may each be provided with an overflow charge storage to provide high dynamic range (HDR) functionality. The background information may be subtracted from the scenery information to cancel out the desired background signal contribution and to obtain an HDR signal with high global shutter efficiency. The charge storage nodes may be implemented as storage diode or storage gate devices. The pixels may be backside illuminated pixels with optical diffracting structures and multiple microlenses formed at the backside to distribute light equally between the two charge storage nodes.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: An image sensor pixel may include multiple split photodiodes that are covered by a single microlens. The image sensor may include a charge overflow capacitor coupled to a pixel charge storage within the image sensor via a gain control transistor. The image sensor pixel may have phase detection capabilities in a first mode of operation enabled by comparing phase signals generated from the split photodiodes. The image sensor pixel also may generate and readout image signals simultaneously in both rolling shutter operations and global shutter operations in a second mode of operation. The image sensor pixel may also generate an image using a linear combination of at least two signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: An imaging pixel may have a fully depleted charge transfer path between a pinned photodiode and a floating diffusion region. A pinned transfer diode may be coupled between the pinned photodiode and the floating diffusion region. The imaging pixel may be formed in upper and lower substrates with an interconnect layer coupling the upper substrate to the lower substrate. The imaging pixel may include one or more storage diodes coupled between the transfer diode and the floating diffusion region. The imaging pixel may be used to capture high dynamic range images with flicker mitigation, images synchronized with light sources, or for high frame rate operation.

Abstract: An image sensor pixel may include a photodiode, one or more storage diodes, one or more potential barrier structures, one or more capacitors, and a floating diffusion region. The photodiode may be coupled to a storage diode and a first capacitor, and a first potential barrier structure may be interposed between the storage diode and the first capacitor. The photodiode may also be coupled to additional storage diodes and additional capacitors in a similar manner. Additionally, the photodiode may be directly separated from a given capacitor via a corresponding potential barrier structure. Each capacitor may store overflow charge from one or more storage diodes and/or the photodiode and may be connected to the floating diffusion via respective transistors.

Abstract: An image sensor pixel may include a photodiode, one or more storage diodes, one or more potential barrier structures, one or more capacitors, and a floating diffusion region. The photodiode may be coupled to a storage diode and a first capacitor, and a first potential barrier structure may be interposed between the storage diode and the first capacitor. The photodiode may also be coupled to additional storage diodes and additional capacitors in a similar manner. Additionally, the photodiode may be directly separated from a given capacitor via a corresponding potential barrier structure. Each capacitor may store overflow charge from one or more storage diodes and/or the photodiode and may be connected to the floating diffusion via respective transistors.

Abstract: An image sensor operable in global shutter mode may include an array of image pixels. Each image pixel may include a photodiode for detecting incoming light and a separate storage diode for temporarily storing charge. To maximize the efficiency of the image pixel array, image pixels may include light guide structures and light shield structures. The light guide structures may be used to funnel light away from the storage node and into the photodiode, while the light shield structures may be formed over storage nodes to block light from entering the storage nodes. The light guide structures may fill cone-shaped cavities in a dielectric layer, or the light guide structures may form sidewalls having a ring-shaped horizontal cross section. Metal interconnect structures in the dielectric layer may be arranged in concentric annular structures to form a near-field diffractive element that funnels light towards the appropriate photodiode.

Abstract: An image sensor pixel may include a photodiode coupled to a pixel charge storage via a charge transfer transistor, a charge overflow capacitor coupled to the pixel charge storage via a gain control transistor, and an adjustable reset drain that is coupled to the charge overflow capacitor via a reset transistor. The reset transistor may receive a reset signal that is dynamically adjusted during an acquisition phase to help reduce flicker. The potential barrier of the reset transistor may also be calibrated during readout to reduce fixed pattern noise among different pixels. The image sensor pixel may generate an image using a linear combination of at least three signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.

Abstract: An image sensor pixel may include a photodiode coupled to a pixel charge storage via a charge transfer transistor, a charge overflow capacitor coupled to the pixel charge storage via a gain control transistor, and an adjustable reset drain that is coupled to the charge overflow capacitor via a reset transistor. The reset transistor may receive a reset signal that is dynamically adjusted during an acquisition phase to help reduce flicker. The potential barrier of the reset transistor may also be calibrated during readout to reduce fixed pattern noise among different pixels. The image sensor pixel may generate an image using a linear combination of at least three signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: An image sensor pixel may include multiple split photodiodes that are covered by a single microlens. The image sensor may include a charge overflow capacitor coupled to a pixel charge storage within the image sensor via a gain control transistor. The image sensor pixel may have phase detection capabilities in a first mode of operation enabled by comparing phase signals generated from the split photodiodes. The image sensor pixel also may generate and readout image signals simultaneously in both rolling shutter operations and global shutter operations in a second mode of operation. The image sensor pixel may also generate an image using a linear combination of at least two signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.

Abstract: Image sensors may include multiple vertically stacked photodiodes interconnected using vertical deep trench transfer gates. A first n-epitaxial layer may be formed on a residual substrate; a first p-epitaxial layer may be formed on the first n-epitaxial layer; a second n-epitaxial layer may be formed on the first p-epitaxial layer; a second p-epitaxial layer may be formed on the second n-epitaxial layer; and so on. The n-epitaxial layers may serve as accumulation regions for the different epitaxial photodiodes. A separate color filter array is not needed. The vertical transfer gates may be a deep trench that is filled with doped conductive material, lined with gate dielectric liner, and surrounded by a p-doped region. Image sensors formed in this way may be used to support a rolling shutter configuration or a global shutter configuration and can either be front-side illuminated or backside illuminated.

Abstract: An image sensor pixel may include multiple split photodiodes that are covered by a single microlens. The image sensor may include a charge overflow capacitor coupled to a pixel charge storage within the image sensor via a gain control transistor. The image sensor pixel may have phase detection capabilities in a first mode of operation enabled by comparing phase signals generated from the split photodiodes. The image sensor pixel also may generate and readout image signals simultaneously in both rolling shutter operations and global shutter operations in a second mode of operation. The image sensor pixel may also generate an image using a linear combination of at least two signals read out using the charge overflow capacitor and light flickering mitigation operations. The image may be a high dynamic range image that is generated from at least a low exposure signal and a high exposure signal.