Abstract: A memory device includes a voltage generator that provides a read voltage to a selected word line and provides a pass voltage to a plurality of unselected word lines, and a deterioration level detection circuit. The selected word line and the unselected word lines are connected to a plurality of memory cells. The deterioration level detection circuit detects a deterioration level of memory cells connected to the selected word line based on data of memory cells that receive the read voltage. The memory cells connected to the selected word line and the memory cells that receive the read voltage are included in the plurality of memory cells. The voltage generator changes the pass voltage provided to the unselected word lines based on the deterioration level.

Abstract: A nonvolatile memory device includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory blocks, each including a plurality memory cells coupled to word-lines respectively, and the word-lines are stacked vertically on a substrate. The control circuit divides a first memory block of the plurality of memory blocks into a partial bad region and a partial normal region based on error information of an uncorrectable error of the first memory block which is designated as a bad block. The control circuit performs a memory operation on the partial normal region by applying a first bias condition to the partial bad region and by applying a second bias condition to the partial normal region, based on a command and an address, and the first bias condition is different from the second bias condition.

Abstract: Nonvolatile memory device includes a memory cell array and a control circuit. The memory cell array includes a plurality of memory blocks, the memory blocks including a plurality of memory cells coupled to word-lines respectively, the word-lines are stacked vertically on a substrate, and some memory cells of the plurality of memory cells are selected by sub-block unit smaller than one memory block. The control circuit divides sub-blocks of a first memory block into at least one bad sub-block and at least one normal sub-block based on error occurrence frequency of each of the sub-blocks, and applies different program/erase cycles to the at least one bad sub-block and the at least one normal sub-block based on a command and an address provided from external to the nonvolatile memory device. The at least one bad sub-block and the at least one normal sub-block are adjacent each other.

Abstract: A non-volatile memory device includes multiple word lines, and a voltage generator. Some of the word lines correspond to a deterioration area. The voltage generator is configured to generate a program voltage provided to multiple memory cells through the word lines. Control logic implemented by the non-volatile memory device is configured to control a program operation and an erase operation on the word lines. The deterioration area includes word lines of a first group and word lines of a second group. The control logic is configured to control a program sequence so that each of the word lines of the second group is programmed after an adjacent word line of the first group is programmed, and to control a distribution so that a threshold voltage level corresponding to an erase state of each of the word lines of the first group is higher than a threshold voltage level corresponding to an erase state of each of the word lines of the second group.

Abstract: A method of erasing a memory device, the method of erasing the memory device including: performing, in a first erase period, a first erase operation on memory cells respectively connected to a plurality of word lines, wherein at least one of the memory cells, which is included in a memory block, is not erase-passed; determining, after the first erase period, an erase operation speed by applying a verify voltage to at least one of the plurality of word lines, and determining an effective erasing time for each word line based on the determined erase operation speed; and performing, in a second erase period, a second erase operation on the memory cells respectively connected to the plurality of word lines based on the determined effective erasing times.

Abstract: A method for controlling a position of a flap of a variable port flap control module (VCM) may include determining whether a vehicle state satisfies a predetermined opening condition of the VCM, determining a VCM opening voltage in consideration of tolerance of the flap of the VCM when the vehicle state satisfies the opening condition of the VCM, and controlling the flap of the VCM to be in an opened state by applying the VCM opening voltage to a motor of the VCM when the opening condition of the VCM is satisfied, during an engine starts.

Abstract: A method of diagnosing a fault of a timer for monitoring an engine off time is capable of accurately determining whether a timer that monitors an engine off time between a previous start off time and a next start on time of an engine has an error by using an engine coolant temperature, an engine oil temperature, a fuel tank pressure, a fuel tank temperature, and an outside air temperature.

Abstract: A system for modulating turbine blade tip clearance is provided. The system may comprise an actuation control system having at least one actuator configured to modulate turbine blade tip clearance between a turbine blade tip and a blade outer air seal (BOAS). Each actuator may be coupled to the BOAS. Each actuator may comprise a solid-state motion amplification device such as a flextensional actuator. The actuators may be configured to move the BOAS in a radial direction from a first position to a second position to control tip clearance.

Abstract: A method of controlling an engine which has a continuous variable valve duration (CVVD) device that controls an operation of opening or closing an intake valve, and an ETC device that controls an operation of opening or closing a throttle valve and adjusts the amount of air to be introduced into a combustion chamber, may include determining whether it is necessary to increase or decrease engine torque; changing a duration of the intake valve by using the CVVD device when it is necessary to increase or decrease the engine torque; and adjusting the amount of air introduced through the ETC device in a state in which the duration of the intake valve is changed.

Abstract: A temperature management method for a hybrid vehicle which includes: a flow rate control valve controlling flow of coolant to an engine, a heater, a heat exchanger, and a radiator; and an exhaust heat recovery device coupled to the flow rate control valve via the heater, the exhaust heat recovery device performing heat exchange between the coolant received from the heater and exhaust gas received from the engine, and supplying the heat-exchanged coolant to the engine, includes: identifying whether the heater is on or off; and identifying at least one of an outside air temperature, a coolant temperature, or an oil temperature and operating the flow rate control valve in a flow stop mode to prevent the coolant of the engine from discharging.

Abstract: A method of controlling an engine which has a continuous variable valve duration (CVVD) device that controls an operation of opening or closing an intake valve, and an ETC device that controls an operation of opening or closing a throttle valve and adjusts the amount of air to be introduced into a combustion chamber, may include determining whether it is necessary to increase or decrease engine torque; changing a duration of the intake valve by using the CVVD device when it is necessary to increase or decrease the engine torque; and adjusting the amount of air introduced through the ETC device in a state in which the duration of the intake valve is changed.

Abstract: A control system is provided and includes a servo control system configured to control aerodynamic element pitching, an optical sensor system disposed along rotor blades to generate an optical response reflective of rotor feedback states of the rotor blades and a processing unit operably coupled between the servo control and optical sensor systems, the processing unit being configured to calculate strain in the rotor blades from the optical response, convert the calculated strain into readings of the rotor feedback states and issue a servo command to the servo control system as an instruction for controlling the aerodynamic element pitching.

Abstract: A non-motorized flying unit for observation according to an exemplary embodiment of the present disclosure includes: a body part which is mounted on a launcher, launched in a direction toward a preset target when the launcher operates, and falls, by its own weight, toward the ground from a position of a top dead point (TDP); a propeller unit which is coupled to the body part, and automatically generates rotational force by means of drag force applied to the body part when the body part falls so as to decrease a falling velocity of the body part; and an image capturing unit which is installed on the body part, and obtains image information in respect to the ground when the body part falls.

Abstract: A nonvolatile memory device includes a memory cell array having memory cells, a row decoder circuit connected to the memory cells through word lines, a page buffer circuit connected to the memory cells through bit lines, and a control circuit controlling the row decoder circuit and the page buffer circuit to repeatedly perform an erase loop including an erase and an erase verification with respect to the memory cells. The control circuit is configured to select one of an increase and a decrease of an erase voltage according to a result of the erase verification of a current erase loop and apply the controlled erase voltage to the memory cells in the erase operation of a subsequent erase loop.

Abstract: A method for detecting malfunction of a fastening bolt in a continuous variable valve timing (CVVT) includes: deciding whether a camshaft position sensor is operating normally; learning the most retarded angle position of the camshaft using the camshaft position sensor; deciding whether the learning of the most retarded angle position of the camshaft is normal; and comparing a PWM duty value used in the learning with a set first reference value when the learning of the most retarded angle position of the camshaft is normal.

Abstract: A method for controlling a position of a flap of a variable port flap control module (VCM) may include determining whether a vehicle state satisfies a predetermined opening condition of the VCM, determining a VCM opening voltage in consideration of tolerance of the flap of the VCM when the vehicle state satisfies the opening condition of the VCM, and controlling the flap of the VCM to be in an opened state by applying the VCM opening voltage to a motor of the VCM when the opening condition of the VCM is satisfied, during an engine starts.

Abstract: A method for catalyst heating control for controlling a catalyst heating period of a catalyst heating system in which lambda sensors are each mounted at upstream and downstream sides of a catalyst converter may include determining a temperature of exhaust gas after an engine starts; determining an oxygen storage capacity of a catalyst depending on the determined temperature of the exhaust gas; comparing the determined oxygen storage capacity with a reference value to decide an aging level of the catalyst; and determining times of the catalyst heating period to be different from each other depending on the decided aging level of the catalyst.

Abstract: Provided is a battery module in which at least one battery cell including an electrode tab including an anode tab and a cathode tab is stacked, including: a sensing assembly installed in a space between the anode tab and the cathode tab at a side of the battery module at which the electrode tab is positioned; and a terminal installed at the side of the battery module at which the electrode tab is positioned and connected to each of the electrode tabs of the battery cells positioned at the outermost portions, wherein the terminal is bonded and connected to a surface positioned at an inner side of the battery module in both sides of the anode tab and the cathode tab.

Abstract: A nonvolatile memory device includes a memory cell array having memory cells, a row decoder circuit connected to the memory cells through word lines, a page buffer circuit connected to the memory cells through bit lines, and a control circuit controlling the row decoder circuit and the page buffer circuit to repeatedly perform an erase loop including an erase and an erase verification with respect to the memory cells. The control circuit is configured to select one of an increase and a decrease of an erase voltage according to a result of the erase verification of a current erase loop and apply the controlled erase voltage to the memory cells in the erase operation of a subsequent erase loop.

Abstract: A nonvolatile memory device includes a memory cell array having memory cells, a row decoder circuit connected to the memory cells through word lines, a page buffer circuit connected to the memory cells through bit lines, and a control circuit controlling the row decoder circuit and the page buffer circuit to repeatedly perform an erase loop including an erase and an erase verification with respect to the memory cells. The control circuit is configured to select one of an increase and a decrease of an erase voltage according to a result of the erase verification of a current erase loop and apply the controlled erase voltage to the memory cells in the erase operation of a subsequent erase loop.