Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

Abstract: A semiconductor device includes a first capacitor structure, a second capacitor structure, and an insulation pattern. The first capacitor structure includes a first lower electrode, a first dielectric layer and a first upper electrode sequentially stacked on a substrate. The second capacitor structure includes a second lower electrode, a second dielectric layer and a second upper electrode sequentially stacked on the substrate, and is adjacent to the first capacitor structure. The insulation pattern partially fills a space between the first and second capacitor structures, and an air gap is formed between the first and second capacitor structures on the insulation pattern.

Abstract: A method of forming a DRAM can include forming a plurality of transistors arranged in a first direction on a substrate and forming a bit line structure that extends in the first direction, where the bit line structure being electrically coupled to the plurality of transistors at respective locations in the first direction. A plurality of first landing pads an be formed at alternating ones of the respective locations having a first position in a second direction on the substrate. A plurality of second landing pads can be formed at intervening ones of the respective locations between the alternating ones of the respective locations, where the intervening ones of the respective locations having a second position in the second direction on the substrate wherein second position is shifted in the second direction relative to the first position.

Abstract: An X-ray detector includes a panel including a plurality of photo-sensing pixels, the photo-sensing pixels being configured to detect an X-ray and to perform photoelectric conversion to output electrical signals, and a read-out integrated circuit connected to the panel, the read-out integrated circuit being configured to read out the electrical signals from the photo-sensing pixels and to generate a self-triggering signal based on the read-out electrical signals.

Abstract: Disclosed herein is an X-ray imaging apparatus including: a gate driver configured to apply a turn-on signal to a plurality of gate lines; and a readout circuit configured to read out a signal from the plurality of gate lines, wherein if an X-ray signal is detected from a gate line of the plurality of gate lines, the gate driver changes a turn-on time period of the turn-on signal.

Abstract: The present invention provides an apparatus having a plasma profile control plate disposed in a plasma processing chamber so as to locally alter plasma density to provide uniform plasma distribution across a substrate surface during processing. In one embodiment, a process kit includes a plate configured to be disposed in a plasma processing chamber, a plurality of apertures formed therethrough, the apertures configured to permit processing gases to flow through the plate, and an array of unit cells including at least one aperture formed in the plate, wherein each unit cell has an electrode assembly individually controllable relative to electrode assemblies disposed in at least two other unit cells.

Abstract: Provided are semiconductor devices and methods of fabricating the same. The semiconductor devices include an interlayer insulating layer on a semiconductor substrate, contact pads on the semiconductor substrate and penetrating the interlayer insulating layer, a stopping insulating layer on the interlayer insulating layer, storage electrodes on the contact pads, upper supporters between upper parts of the storage electrodes, side supporters between the storage electrodes and the upper supporters, a capacitor dielectric layer on the storage electrodes, the side supporters, and the upper supporters, and a plate electrode on the capacitor dielectric layer.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes sequentially forming a mold layer and a preliminary support layer on a substrate, forming a plurality of lower electrodes through the preliminary support layer and the mold layer, removing a portion of the preliminary support layer between the plurality of lower electrodes to form a preliminary support layer pattern having an open area exposing a top surface of the mold layer, removing the mold layer to form a void between the substrate and the preliminary support layer pattern, filling the open area and the void with a sacrificial layer, and replacing the preliminary support layer pattern with a support pattern.

Abstract: A method of forming a DRAM can include forming a plurality of transistors arranged in a first direction on a substrate and forming a bit line structure that extends in the first direction, where the bit line structure being electrically coupled to the plurality of transistors at respective locations in the first direction. A plurality of first landing pads an be formed at alternating ones of the respective locations having a first position in a second direction on the substrate. A plurality of second landing pads can be formed at intervening ones of the respective locations between the alternating ones of the respective locations, where the intervening ones of the respective locations having a second position in the second direction on the substrate wherein second position is shifted in the second direction relative to the first position.

Abstract: A display apparatus is provided. The display apparatus includes a display panel comprising a plurality of pixels including a plurality of sub-pixels, and arranges and displays a multi-view image in an arrangement pattern. The display panel includes a polarizing film disposed on a back surface of the display panel and which transmits, to the display panel, light having a first polarization direction to an area corresponding to a first part of each of the sub-pixels, and light having a second polarization direction to an area corresponding to a second part of the sub-pixels. a polarizing panel disposed on a back surface of the polarizing film and configured to adjusts the first and second polarization directions of the light transmitted by the polarizing film, and a controller configured to control a driving state of the polarizing panel to sequentially provide the first and second polarization directions for one image frame section.

Abstract: The present invention relates to a car cleaner, and more particularly, to a car cleaner which is capable of sucking dust with a strong suction force and discharging high pressure air with a strong blowing force.

Abstract: An apparatus for depositing a coating on a substrate at atmospheric pressure comprises (a) a plasma torch comprising a microwave source coupled to an antenna disposed within a chamber having an open end, the chamber comprising a gas inlet for flow of a gas over the antenna to generate a plasma jet; (b) a substrate positioned outside the open end of the chamber a predetermined distance away from a tip of the antenna; and (c) a target material to be coated on the substrate disposed at the tip of the antenna.

Abstract: An autostereoscopic multi-view image display apparatus includes an image panel including pixels arranged in rows and columns, a backlight unit configured to provide light to the image panel, a viewing zone separator disposed in front of the image panel and configured to provide different viewpoints according to viewing zones, and a controller configured to control multi-view images included into one image frame to be divided into two groups, control two sub-frames including multi-view images included in the divided groups to be sequentially displayed, and control lights of different directions to be provided to the image panel at points of time when the two sub-frames are displayed, respectively.

Abstract: Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.

Abstract: Methods of controlling the polarity of capacitive plasma power applied to a remote plasma are described. Rather than applying a plasma power which involves both a positive and negative voltage swings equally, a capacitive plasma power is applied which favors either positive or negative voltage swings in order to select desirable process attributes. For example, the plasma power may be formed by applying a unipolar oscillating voltage between an electrode and a perforated plate. The unipolar oscillating voltage may have only positive or only negative voltages between the electrode and the perforated plate. The unipolar oscillating voltage may cross electrical ground in some portion of its oscillating voltage.

Abstract: Embodiments of the invention provide a power supply including a transformer comprising a single output terminal on a secondary side, a first output unit comprising a first capacitor and connected to the single output terminal to output a first output voltage, a second output unit comprising a second capacitor having a larger capacity than the first capacitor and connected to the single output terminal to output a second output voltage, and a controller configured to control the first output voltage to be output until power is applied and charging of the second capacitor is started.

Abstract: Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

Abstract: A display device includes a display panel, a source driving part, a gate driving part, a readout part and a pulse generating part. The display panel includes an array substrate on which a source line and a gate line are formed, and an opposite substrate on which a common electrode is formed. The readout part is electrically connected with at least one of the lines of the array substrate and the common electrode of the opposite substrate, and reads out a detection signal during an elimination period of a frame period. The pulse generating part outputs a control pulse for driving the readout part during the elimination period. Accordingly, a detection signal is read out through lines or a common electrode that are/is formed for displaying an image, so that an aperture ratio may be increased, and a manufacturing process thereof may be simplified.

Abstract: A display apparatus includes a display panel configured to display an image frame that includes a right-eye image and a left-eye image, and a touch panel configured to sense a user touch, wherein the touch panel includes a polarizing switch panel configured to switch a direction of polarization of light emitted from the display panel, and a parallax realization layer which is formed on one side of the polarizing switch panel and is configured to provide a binocular disparity image by using light emitted from the polarizing switch panel.