Abstract: The electronic wave leakage measurement system according to the present invention is a system for measuring the electronic wave leakage of an electronic wave shielding structure. The system comprising a signal generator for generating an electronic wave generation signal; a transmitting antenna for transmitting the electronic wave towards a wall surface of the electronic wave shielding structure by receiving the signal from the signal generator; a receiving antenna capable of beam steering and comprising N individual antenna modules for receiving the electronic wave that has passed through the wall surface of the electronic wave shielding structure; and a signal analyzer that analyzes and displays the received electronic wave signal from the receiving antenna.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a gate electrode on a substrate and extending in a first direction, source/drain patterns spaced apart from each other, in a second direction, with the gate electrode interposed therebetween, a gate contact electrically connected to the gate electrode, and an active contact electrically connected to at least one of the source/drain patterns. The active contact includes a lower contact pattern electrically connected to the at least one of the source/drain patterns, the lower contact pattern having a first width in the first direction, and an upper contact pattern electrically connected to a top surface of the lower contact pattern, the upper contact pattern having a second width in the first direction that is smaller than the first width. The upper contact pattern and the gate contact horizontally overlap each other.

Abstract: A security key is configured to be replaced when a device is replaced in a machine-to-machine (M2M) system. A method for operating a first device may include: receiving a first message including first information associated with security key replacement from a second device or a third device; receiving a third message including second information associated with security key replacement, which is generated based on a second message including a security key replacement indication, from the second device or the third device; and replacing the security key.

Abstract: The refrigerator of the present disclosure allows sufficient air flow to a detection sensor by allowing the detection sensor to be located on an air discharge side of a blowing fan to determine a frosting degree or a defrosting degree of a cooling source.

Abstract: The present disclosure provides a refrigerator operation control method capable of accurately recognizing whether an abnormal situation occurs as well as determining a defrosting time using an identified rotation speed of a blowing fan.

Abstract: The present disclosure related to managing a data license in a machine-to-machine (M2M) system, and a method for operating a first device may include generating a first resource including data and a second resource including information for managing a license of the data, receiving a message for requesting an operation for the data from a second device, determining, based on the information in the second resource, whether the operation is permitted, and transmitting a second message for performing the operation to the second device or a third device.

Abstract: A semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. The first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. The semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a gate electrode on a substrate and extending in a first direction, source/drain patterns spaced apart from each other, in a second direction, with the gate electrode interposed therebetween, a gate contact electrically connected to the gate electrode, and an active contact electrically connected to at least one of the source/drain patterns. The active contact includes a lower contact pattern electrically connected to the at least one of the source/drain patterns, the lower contact pattern having a first width in the first direction, and an upper contact pattern electrically connected to a top surface of the lower contact pattern, the upper contact pattern having a second width in the first direction that is smaller than the first width. The upper contact pattern and the gate contact horizontally overlap each other.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: The present disclosure relates to augmenting data in a machine-to-machine (M2M) system, and a method for operating an apparatus may include receiving a request message including information necessary for data augmentation, obtaining original data based on the information, generating augmented data from the original data based on the information, and storing the augmented data.

Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.

Abstract: The present disclosure is directed to enable an artificial intelligence (AI) service in a machine-to-machine (M2M) system, and a method for operating a first device may include transmitting a first message for requesting to generate a resource associated with training of an artificial intelligence model to a second device, transmitting a second message for requesting to perform the training based on the resource to the second device, receiving a third message for notifying completion of the training of the artificial intelligence model from the second device, and performing a predicting operation using the trained artificial intelligence model.

Abstract: The present disclosure related to managing a data license in a machine-to-machine (M2M) system, and a method for operating a first device may include generating a first resource including data and a second resource including information for managing a license of the data, receiving a message for requesting an operation for the data from a second device, determining, based on the information in the second resource, whether the operation is permitted, and transmitting a second message for performing the operation to the second device or a third device.

Abstract: The present disclosure relates to a defensive driving vehicles interaction system (D2VIS), and to an autonomous driving predictive defensive driving system through an interaction based on forward vehicle driving and situation judgement information and a method thereof. An autonomous driving predictive defensive driving system through an interaction based on forward vehicle driving and situation judgement information according to the present disclosure includes an inter-vehicle distance recognition unit configured to recognize a distance between a surrounding vehicle and an ego vehicle, a situation recognition unit configured to recognize situation information including surrounding information of the surrounding vehicle, and a driving situation response determination unit configured to share data for determining a defensive driving action by using the situation information.

Abstract: Embodiments of the present disclosure are directed to forwarding a large amount of data in a machine-to-machine (M2M) system, and a method for operating a first device may include: transmitting, to a second device, a request message for bulk data transfer; and receiving, from the second device, an acknowledgment message for notifying completion of the bulk data transfer, wherein the request message may include at least one of information for identifying data to be included in bulk data, information on a target common service entity (CSE) in a target platform that receives the bulk data, information for indicating processing of source data after the bulk data transfer, and information for accessing the target CSE.

Abstract: A semiconductor device may include a substrate including a first region and a second region and a first active pattern on the first region. The first active pattern may include a pair of first source/drain patterns and a first channel pattern therebetween, and the first channel pattern may include a plurality of first semiconductor patterns stacked on the substrate. The semiconductor device may further include a first gate electrode, which is provided on the first channel patterns, and a supporting pattern, which is provided on side surfaces of the plurality of first semiconductor patterns to connect the side surfaces of the plurality of first semiconductor patterns to each other.

Abstract: Disclosed herein are a cooperative driving method based on driving negotiation and an apparatus for the same. The cooperative driving method is performed by a cooperative driving apparatus for cooperative driving based on driving negotiation, and includes determining whether cooperative driving is possible in consideration of a driving mission of a requesting vehicle that requests cooperative driving with neighboring vehicles, when it is determined that cooperative driving is possible, setting a responding vehicle from which cooperative driving is to be requested among the neighboring vehicles, performing driving negotiation between the requesting vehicle and the responding vehicle based on a driving negotiation protocol, and when the driving negotiation is completed, performing cooperative driving by providing driving guidance information for vehicle control to at least one of the requesting vehicle and the responding vehicle.

Abstract: The present invention relates to a method and apparatus for handling personal data in a machine-to-machine (M2M) system, and an operation method of an M2M device includes obtaining information related to consent of a user for personal data provided from an Internet of things (IoT) device and creating a consent-related resource based on the information. The resource includes at least one attribute related to the consent.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.