Abstract: An operation method is provided for deleting a resource in an M2M system. The operation method includes receiving a first deletion request message requesting deletion of a resource from a counterpart M2M apparatus and transmitting a first deletion response message for the first deletion request message to the counterpart M2M apparatus. A second deletion request message is received that requests deletion of the resource from the counterpart M2M apparatus and the resource is deleted.

Abstract: The present invention relates to a complex event processing managing method and apparatus in M2M system. The complex event processing (CEP) managing method according to an embodiment of the present invention includes receiving a CEP request, setting an event processing resource (eventProcessing) responding to the CEP request, and, when an event corresponding to the event processing resource occurs, triggering a corresponding action. In addition, the action is managed by a preset event rule.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a gate electrode on a substrate and extending in a first direction, source/drain patterns spaced apart from each other, in a second direction, with the gate electrode interposed therebetween, a gate contact electrically connected to the gate electrode, and an active contact electrically connected to at least one of the source/drain patterns. The active contact includes a lower contact pattern electrically connected to the at least one of the source/drain patterns, the lower contact pattern having a first width in the first direction, and an upper contact pattern electrically connected to a top surface of the lower contact pattern, the upper contact pattern having a second width in the first direction that is smaller than the first width. The upper contact pattern and the gate contact horizontally overlap each other.

Abstract: A semiconductor device includes a first fin pattern and a second fin pattern in a NMOS region, each extending lengthwise along a first direction and separated by a first trench and a third fin pattern and a fourth fin pattern in a PMOS region, each extending lengthwise along the first direction in parallel with respective ones of the first fin pattern and the second fin pattern and separated by a second trench. First and second isolation layers are disposed in the first and second trenches, respectively. A first gate electrode extends lengthwise along a second direction transverse to the first direction and crosses the first fin pattern. A second gate electrode extends lengthwise along the second direction and crosses the second fin pattern. Spaced apart third and fourth gate electrodes extend lengthwise along the second direction on the second isolation layer.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: Disclosed herein are a method and procedure for processing protection data for protecting data privacy in an M2M system. According to an embodiment of the present disclosure, an M2M apparatus located in an M2M platform in an M2M system includes a communicator configured to transmit and receive a signal and a processor configured to control the communicator. Herein, the processor generates a resource at a resource generation request for administering data received by the communicator, generates a resource at a resource generation request for storing the data received by the communicator, determines whether the data received by the communicator are protection data, and when the data are determined as protection data, performs data processing for privacy protection.

Abstract: A method and apparatus for providing an edge transfer according to the movement of a device are provided. The method includes receiving a handover decision and handover information from a network, when a device performs the handover and a network function virtualization instance of the source edge is transferred to the target edge. The method then transfers an M2M service instance of the source edge to an M2M edge node.

Abstract: Disclosed herein is a method and device for identifying a service entity in an Machine-to-Machine (M2M) system. The method for an M2M device for requesting a service includes transmitting a message requesting information on a service entity to a registry, obtaining the information on the service entity and using the service through the service entity.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: Provided is an apparatus and a method for hand-over that allow a seamless wireless network service based on learning using empirical data, the apparatus including a memory in which a learning-based handover program is stored and a processor configured to execute the program, in which the processor receives communication related state information to select an access node according to a policy and evaluates a level of satisfaction on the selected access node.

Abstract: The present invention relates to a complex event processing managing method and apparatus in M2M system. The complex event processing (CEP) managing method according to an embodiment of the present invention includes receiving a CEP request, setting an event processing resource (eventProcessing) responding to the CEP request, and, when an event corresponding to the event processing resource occurs, triggering a corresponding action. In addition, the action is managed by a preset event rule.

Abstract: Disclosed herein is a method for transforming data for low volume transmission of a meta model based protocol which monitors power amount data of new renewable energy, including: generating energy sensing data; receiving, by a client, the energy sensing data and transforming the received energy sensing data into meta model data including a meta model and meta data; generating packet meta model data by dividing and compressing the meta model data; transmitting the packet meta model data to a server through an Internet of Things (IOT) communication network; and parsing, by the server, the packet meta model data to output the meta model data.

Abstract: An M2M application test apparatus and method are disclosed. According to one embodiment of the present invention, the M2M application test apparatus for testing an M2M application on the basis of a one M2M standard can comprise: an application storage for storing at least one application to be tested; and at least one server, which configures a test triggering message on the basis of the application to be tested and test-related information so as to transmit the test triggering message to the application to be tested, and receives a test result from the application to be tested and provides the same.

Abstract: A method for manufacturing metal oxide-grown carbon fibers including immersing carbon fibers in a solution for forming a metal oxide seed layer and electrodepositing a metal oxide seed on the surfaces of carbon fibers, or irradiating microwave thereto to form a metal oxide seed layer, and irradiating microwave to the metal oxide seed layer-formed carbon fibers to grow metal oxide. The method for manufacturing metal oxide-grown carbon fibers can reduce process time, and improve process energy efficiency and production efficiency. The method for manufacturing metal oxide-grown carbon fibers can offer metal oxide-grown carbon fibers with improved interfacial shear stress.

Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a substrate including an active fin extending in a first direction; a gate structure extending in a second direction to intersect the active fin; a source/drain region on the active fin; a metal silicide layer on the source/drain region; a filling insulating portion on the metal silicide layer, the filling insulating portion having a contact hole connected to a portion of the metal silicide layer; a protective barrier layer between the metal silicide layer and the filing insulating portion; and a contact plug in the contact hole and electrically connected to the portion of the metal silicide layer.

Abstract: A semiconductor device includes a substrate having a first region and a second region, first active fins that extend in a first direction in the first region, second active fins that extend in the first direction in the second region, a first field insulating layer between the first active fins and that extend in a second direction, a second field insulating layer between the second active fins and extending in the second direction, a gate line that extends in the second direction on the second field insulating layer, the gate line linearly along with the first field insulating layer, a gate isolation layer between the first field insulating layer and the gate line, and gate spacers that extend in the second direction, the gate spacers in contact with both sidewalls of each of the first field insulating layer, the gate line, and the gate isolation layer.

Abstract: A semiconductor device includes a first fin pattern and a second fin pattern in a NMOS region, each extending lengthwise along a first direction and separated by a first trench and a third fin pattern and a fourth fin pattern in a PMOS region, each extending lengthwise along the first direction in parallel with respective ones of the first fin pattern and the second fin pattern and separated by a second trench. First and second isolation layers are disposed in the first and second trenches, respectively. A first gate electrode extends lengthwise along a second direction transverse to the first direction and crosses the first fin pattern. A second gate electrode extends lengthwise along the second direction and crosses the second fin pattern. Spaced apart third and fourth gate electrodes extend lengthwise along the second direction on the second isolation layer.

Abstract: A semiconductor device includes a first impurity region, a channel pattern, a second impurity region, a gate structure, a first contact pattern, a second contact pattern and a spacer. The first impurity region may be formed on a substrate. The channel pattern may protrude from an upper surface of the substrate. The second impurity region may be formed on the channel pattern. The gate structure may be formed on a sidewall of the channel pattern and the substrate adjacent to the channel pattern, and the gate structure may include a gate insulation pattern and a gate electrode. The first contact pattern may contact an upper surface of the second impurity region. The second contact pattern may contact a surface of the gate electrode. The spacer may be formed between the first and second contact patterns. The spacer may surround a portion of a sidewall of the second contact pattern, and the spacer may contact a sidewall of each of the first and second contact patterns.

Abstract: A method of manufacturing a semiconductor device is provided as follows. A fin and an isolation surrounding a lower portion of the fin are formed on a substrate. A plurality of sacrificial gate electrodes is formed on the fin and the isolation. A plurality of recessed upper surfaces of the fin is formed from an upper surface of the fin. An upper surface of the isolation is protected until the plurality of recessed upper surfaces of the fin is formed from the upper surface of the fin. A plurality of source/drains is formed on the plurality of recessed upper surfaces of the fin.