Abstract: A stack package includes a supporting substrate that supports first and second semiconductor dies. The supporting substrate is disposed on a package substrate and is supported by first and second connection bumps. Redistributed line (RDL) patterns are disposed on the supporting substrate to electrically connect the first semiconductor die to the first and second connection bumps. The second semiconductor dies are connected to the package substrate by bonding wires.

Abstract: Disclosed is a method for preparing a titanium solid catalyst supported on magnesium dichloride that may be used to prepare ultra-high molecular weight polyethylene having a high apparent density. Performing a polymerization reaction using a solid catalyst containing titanium tetrachloride and a phthalate compound may allow ultra-high molecular weight polyethylene having uniform particle size and high apparent density to be prepared.

Abstract: Disclosed is a method for preparing a solid catalyst capable of controlling a molecular weight distribution and polydispersity according to an organic compound as used in a polymerization reaction, in which the solid catalyst contains titanium tetrachloride and a diester or diether organic compound. The catalyst having excellent polymerization activity, and allowing uniform particle size and high apparent density of the ultra-high molecular weight polyethylene, and easily controlling the molecular weight distribution and polydispersity of the ultra-high molecular weight polyethylene may be prepared simply and efficiently.

Abstract: A stack package includes a package substrate and a fan-out sub-package mounted on the package substrate using first and second connection bumps. The fan-out sub-package includes a first semiconductor die and redistributed line (RDL) patterns. Second semiconductor dies are stacked on the package substrate to provide a first step structure, and third semiconductor dies are stacked on the second semiconductor dies to provide a second step structure. The second and third semiconductor dies are connected to the package substrate by bonding wires.

Abstract: Disclosed are a semiconductor device and a stacked semiconductor package. The semiconductor device may include a semiconductor chip and a plurality of chip pads disposed on the semiconductor chip in a second horizontal direction perpendicular to a first horizontal direction. The plurality of chip pads may include: a first chip pad connected to a wire extending in the first horizontal direction, when seen from the top; and a second chip pad connected to a diagonal wire extending in a direction at an angle to the first and second horizontal directions, when seen from the top. The width of the first chip pad in the second horizontal direction may be smaller than the width of the second chip pad in the second horizontal direction.

Abstract: A stack package includes a supporting substrate that supports first and second semiconductor dies. The supporting substrate is disposed on a package substrate and is supported by first and second connection bumps. Redistributed line (RDL) patterns are disposed on the supporting substrate to electrically connect the first semiconductor die to the first and second connection bumps. The second semiconductor dies are connected to the package substrate by bonding wires.

Abstract: A stack package includes a package substrate and a fan-out sub-package mounted on the package substrate using first and second connection bumps. The fan-out sub-package includes a first semiconductor die and redistributed line (RDL) patterns. Second semiconductor dies are stacked on the package substrate to provide a first step structure, and third semiconductor dies are stacked on the second semiconductor dies to provide a second step structure. The second and third semiconductor dies are connected to the package substrate by bonding wires.

Abstract: Mineralogical method and apparatus for removal of cesium ion in aqueous solution are provided. In particular, a mineralogical method for removal of cesium ion in aqueous solution including controlling a temperature of radioactive wastewater containing cesium from 25 to 45° C., controlling an initial pH of the radioactive wastewater from 6.0 to 8.5, and adding iron(II) and sulfide(?II) containing sulfur in the ?2 oxidation state to the radioactive wastewater, to convert the cesium ion in aqueous solution into a cesium mineral, and a mineralogical apparatus for removal of cesium ion in aqueous solution, capable of being applied to such a method, are provided.

Abstract: A semiconductor integrated circuit device may include a pad, a first voltage protection circuit and a second voltage protection circuit. The first voltage protection circuit may be connected with the pad. The second voltage protecting circuit may be connected between the first voltage protection circuit and a ground terminal. The first voltage protection circuit may include a gate positive p-channel metal oxide semiconductor (GPPMOS) transistor. The second voltage protection circuit may include serially connected GPPMOS transistors.

Abstract: The present invention provides a fed-batch culture method comprising a step of fed-batch-feeding a carbon source base and a base in such a manner that the pH level can be maintained at a level suitable for the growth of microorganisms for fermentation of a carbon source. The present invention also provides a method for preparing organic acids using the fed-batch culture method. The present invention fed-batch-feeds a neutralizing agent such as ammonium bicarbonate, ammonium carbonate or alkali metal-containing weak base, and a carbon source substrate in preparing organic acids by microorganism fermentation. Thus, a pH level suitable for the survival of microorganisms for carbon source fermentation can be maintained, and the speed of injecting the carbon source base which is the source material can be appropriately adjusted.

Abstract: A semiconductor package may include a first chip stack including first chips which are stacked on a package substrate. The semiconductor package may include a second chip stack including second chips which are stacked on the package substrate. The semiconductor package may include a third chip disposed on the first and second chip stacks.

Abstract: A semiconductor integrated circuit device may include a pad, a first voltage protection unit and a second voltage protection unit. The first voltage protection unit may be connected with the pad. The first voltage protection unit may be configured to maintain a turn-off state when a test voltage having a negative level may be applied from the pad. The second voltage protection unit may be connected between the first voltage protection unit and a ground terminal. The second voltage protection unit may be turned-on when an electrostatic voltage having a positive level may be applied from the pad. The second voltage protection unit may include a plurality of gate positive p-channel metal oxide semiconductor (GPPMOS) transistors serially connected with each other.

Abstract: A semiconductor package may include a first chip stack including first chips which are stacked on a package substrate. The semiconductor package may include a second chip stack including second chips which are stacked on the package substrate. The semiconductor package may include a third chip disposed on the first and second chip stacks.

Abstract: An engine may include a cylinder bore configured to have a combustion chamber formed by setting a top section in which a top dead center is formed, a bottom section in which a bottom dead center is formed, and a middle section H formed between the top section and the bottom section and reduce a shearing resistance by a texturing pattern formed in the middle section H.

Abstract: A flexible device includes a first conductive pattern, a second conductive pattern, and a dielectric layer. The first conductive pattern includes a first sliding contact portion and a first extension portion. The second conductive pattern includes a second sliding contact portion overlapping with the first sliding contact portion and the second conductive pattern includes a second extension portion. The second sliding contact portion is in contact with the first sliding contact portion and is movable on the first sliding contact portion for a sliding motion. The first and second conductive patterns are embedded in the dielectric layer.

Abstract: Provided are a biomineralogical method for removing cesium ions. The method for removing cesium ions, the method comprising: adding metal-reducing bacteria, an iron source, and a sulfur source into a solution containing the cesium ions to convert the cesium ions into a solid mineral incorporating cesium. The method for removing cesium ions according to the present invention has advantages in that the cesium ions may be removed with high efficiency and small volume even in the case in which competing ions are present at a high concentration like sea water.

Abstract: A flexible device includes a first conductive pattern, a second conductive pattern, and a dielectric layer. The first conductive pattern includes a first sliding contact portion and a first extension portion. The second conductive pattern includes a second sliding contact portion overlapping with the first sliding contact portion and the second conductive pattern includes a second extension portion. The second sliding contact portion is in contact with the first sliding contact portion and is movable on the first sliding contact portion for a sliding motion. The first and second conductive patterns are embedded in the dielectric layer.

Abstract: A semiconductor device is provided. The semiconductor device may include a substrate and a through via structure penetrating the substrate. The through via structure may provide a dual path that may include an electrical path and an optical path. Related electronic systems and memory cards are also provided.

Abstract: A semiconductor device is provided. The semiconductor device may include a substrate and a through via structure penetrating the substrate. The through via structure may provide a dual path that may include an electrical path and an optical path. Related electronic systems and memory cards are also provided.

Abstract: Provided are a mineralizing removal method and apparatus for highly concentrated iodine in radioactive wastewater. According to the present invention, since only a small amount of sludge is discharged as compared to the previous treatment methods, a generation amount of the radioactive waste may be significantly decreased, such that wastewater containing highly or ultra-highly concentrated iodine may also be effectively treated. Further, only iodine may be selectively removed regardless of the presence of competitive anions in the wastewater. Treatment may be performed under a neutral or weak alkaline condition rather than an acidic condition, such that a volatilization of radioactive iodine was fundamentally blocked, and at the time of discharging the wastewater, a neutralization treatment process is not required.