Patents by Inventor Shahaji B. More

Shahaji B. More has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200365720
    Abstract: A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.
    Type: Application
    Filed: August 3, 2020
    Publication date: November 19, 2020
    Inventors: Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee
  • Patent number: 10840358
    Abstract: Semiconductor structures and method for forming the same are provide. The method includes forming a gate structure over a substrate and forming a recess in the substrate adjacent to the gate structure. The method further includes forming a doped region at a sidewall and a bottom surface of the recess and partially removing the doped region to modify a shape of the recess. The method further includes forming a source/drain structure over a remaining portion of the doped region.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee, Huai-Tei Yang
  • Publication number: 20200350435
    Abstract: A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Chih-Yu Ma, Shahaji B. More, Yi-Min Huang, Shih-Chieh Chang
  • Publication number: 20200343127
    Abstract: In a method of manufacturing a semiconductor device including a field effect transistor (FET), a sacrificial region is formed in a substrate, and a trench is formed in the substrate. A part of the sacrificial region is exposed in the trench. A space is formed by at least partially etching the sacrificial region, an isolation insulating layer is formed in the trench and the space, and a gate structure and a source/drain region are formed. An air spacer is formed in the space under the source/drain region.
    Type: Application
    Filed: December 31, 2019
    Publication date: October 29, 2020
    Inventors: Clement Hsingjen WANN, Chun Hsiung TSAI, Shahaji B. MORE, Che-Chih HSU, Chinyu SU, Po-Han TSENG, Wen Han HUNG
  • Publication number: 20200303548
    Abstract: The present disclosure describes a method to form silicon germanium (SiGe) source/drain epitaxial stacks with a boron doping profile and a germanium concentration that can induce external stress to a fully strained SiGe channel. The method includes forming one or more gate structures over a fin, where the fin includes a fin height, a first sidewall, and a second sidewall opposite to the first sidewall. The method also includes forming a first spacer on the first sidewall of the fin and a second spacer on the second sidewall of the fin; etching the fin to reduce the fin height between the one or more gate structures; and etching the first spacer and the second spacer between the one or more gate structures so that the etched first spacer is shorter than the etched second spacer and the first and second etched spacers are shorter than the etched fin. The method further includes forming an epitaxial stack on the etched fin between the one or more gate structures.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shahaji B. More, Huai-Tei Yang, Shih-Chieh Chang, Cheng-Han Lee
  • Publication number: 20200303549
    Abstract: A method for forming a FinFET device structure is provided. The method includes forming a fin structure extended above a substrate and forming a gate structure formed over a portion of the fin structure. The method also includes forming a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The method further includes doping an outer portion of the S/D structure to form a doped region, and the doped region includes gallium (Ga). The method includes forming a metal silicide layer over the doped region; and forming an S/D contact structure over the metal silicide layer.
    Type: Application
    Filed: June 11, 2020
    Publication date: September 24, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Hsiung TSAI, Shahaji B. MORE, Cheng-Yi PENG, Yu-Ming LIN, Kuo-Feng YU, Ziwei FANG
  • Publication number: 20200295157
    Abstract: A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Inventors: Shahaji B. More, Cheng-Han Lee, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Publication number: 20200273963
    Abstract: A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium and further includes gallium in an upper portion of the epitaxial layer that is in contact with the silicide feature.
    Type: Application
    Filed: May 11, 2020
    Publication date: August 27, 2020
    Inventors: Shahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Kuo-Feng Yu, Cheng-Yi Peng
  • Patent number: 10749010
    Abstract: Methods for forming semiconductor structures are provided. The method includes forming a fin structure over a substrate and forming a gate structure across the fin structure. The method further includes recessing the fin structure to form a recess and implanting dopants from the recess to form a doped region. The method further includes diffusing the dopants in the doped region to form an expanded doped region and forming a source/drain structure over the expanded doped region.
    Type: Grant
    Filed: July 19, 2019
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shahaji B. More, Chun-Hsiung Tsai, Cheng-Yi Peng, Shih-Chieh Chang, Kuo-Feng Yu
  • Publication number: 20200251571
    Abstract: The present disclosure relates to a semiconductor device including a substrate having a top surface and a gate stack. The gate stack includes a gate dielectric layer on the substrate and a gate electrode on the gate dielectric layer. The semiconductor device also includes a multi-spacer structure. The multi-spacer includes a first spacer formed on a sidewall of the gate stack, a second spacer, and a third spacer. The second spacer includes a first portion formed on a sidewall of the first spacer and a second portion formed on the top surface of the substrate. The second portion of the second spacer has a thickness in a first direction that gradually decreases. The third spacer is formed on the second portion of the second spacer and on the top surface of the substrate. The semiconductor device further includes a source/drain region formed in the substrate, and a portion of the third spacer abuts the source/drain region and the second portion of the second spacer.
    Type: Application
    Filed: November 20, 2019
    Publication date: August 6, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun Hsiung TSAI, Clement Hsingjen WANN, Kuo-Feng YU, Ming-Hsi YEH, Shahaji B. MORE, Yu-Ming LIN
  • Publication number: 20200251390
    Abstract: A method includes forming a gate stack of a transistor. The formation of the gate stack includes forming a silicon oxide layer on a semiconductor region, depositing a hafnium oxide layer over the silicon oxide layer, depositing a lanthanum oxide layer over the hafnium oxide layer, and depositing a work-function layer over the lanthanum oxide layer. Source/drain regions are formed on opposite sides of the gate stack.
    Type: Application
    Filed: April 20, 2020
    Publication date: August 6, 2020
    Inventors: Shahaji B. More, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Patent number: 10734524
    Abstract: A method includes providing a substrate having a gate structure over a first side of the substrate, forming a recess adjacent to the gate structure, and forming in the recess a first semiconductor layer having a dopant, the first semiconductor layer being non-conformal, the first semiconductor layer lining the recess and extending from a bottom of the recess to a top of the recess. The method further includes forming a second semiconductor layer having the dopant in the recess and over the first semiconductor layer, a second concentration of the dopant in the second semiconductor layer being higher than a first concentration of the dopant in the first semiconductor layer.
    Type: Grant
    Filed: July 8, 2019
    Date of Patent: August 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Yu Ma, Zheng-Yang Pan, Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee
  • Publication number: 20200243683
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.
    Type: Application
    Filed: April 17, 2020
    Publication date: July 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shahaji B. MORE, Zheng-Yang PAN, Chun-Chieh WANG, Cheng-Han LEE, Shih-Chieh CHANG
  • Patent number: 10720530
    Abstract: A device includes a fin extending from a substrate, a gate stack over and along sidewalls of the fin, a gate spacer along a sidewall of the gate stack, and an epitaxial source/drain region in the fin and adjacent the gate spacer. The epitaxial source/drain region includes a first epitaxial layer on the fin, the first epitaxial layer including silicon, germanium, and arsenic, and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer including silicon and phosphorus, the first epitaxial layer separating the second epitaxial layer from the fin. The epitaxial source/drain region further includes a third epitaxial layer on the second epitaxial layer, the third epitaxial layer including silicon, germanium, and phosphorus.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Yu Ma, Shahaji B. More, Yi-Min Huang, Shih-Chieh Chang
  • Patent number: 10686074
    Abstract: A FinFET device structure is provided. The FinFET device structure includes a fin structure extended above a substrate and a gate structure formed over a middle portion of the fin structure. The middle portion of the fin structure is wrapped by the gate structure. The FinFET device structure includes a source/drain (S/D) structure adjacent to the gate structure, and the S/D structure includes a doped region at an outer portion of the S/D structure, and the doped region includes gallium (Ga). The FinFET device structure includes a metal silicide layer formed over the doped region of the S/D structure, and the metal silicide layer is in direct contact with the doped region of the S/D structure.
    Type: Grant
    Filed: February 9, 2018
    Date of Patent: June 16, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Hsiung Tsai, Shahaji B. More, Cheng-Yi Peng, Yu-Ming Lin, Kuo-Feng Yu, Ziwei Fang
  • Patent number: 10680106
    Abstract: The present disclosure describes a method to form silicon germanium (SiGe) source/drain epitaxial stacks with a boron doping profile and a germanium concentration that can induce external stress to a fully strained SiGe channel. The method includes forming one or more gate structures over a fin, where the fin includes a fin height, a first sidewall, and a second sidewall opposite to the first sidewall. The method also includes forming a first spacer on the first sidewall of the fin and a second spacer on the second sidewall of the fin; etching the fin to reduce the fin height between the one or more gate structures; and etching the first spacer and the second spacer between the one or more gate structures so that the etched first spacer is shorter than the etched second spacer and the first and second etched spacers are shorter than the etched fin. The method further includes forming an epitaxial stack on the etched fin between the one or more gate structures.
    Type: Grant
    Filed: June 4, 2018
    Date of Patent: June 9, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shahaji B. More, Huai-Tei Yang, Shih-Chieh Chang, Cheng-Han Lee
  • Patent number: 10672886
    Abstract: A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K dielectric material includes forming a first dielectric layer comprising hafnium over the substrate, and forming a second dielectric layer comprising lanthanum over the first dielectric layer.
    Type: Grant
    Filed: October 2, 2017
    Date of Patent: June 2, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shahaji B. More, Cheng-Han Lee, Zheng-Yang Pan, Shih-Chieh Chang, Chun-Chieh Wang
  • Publication number: 20200152742
    Abstract: The present disclosure describes an exemplary method to form p-type fully strained channel (PFSC) or an n-type fully strained channel (NFSC) that can mitigate epitaxial growth defects or structural deformations in the channel region due to processing. The exemplary method can include (i) two or more surface pre-clean treatment cycles with nitrogen trifluoride (NF3) and ammonia (NH3) plasma, followed by a thermal treatment; (ii) a prebake (anneal); and (iii) a silicon germanium epitaxial growth with a silicon seed layer, a silicon germanium seed layer, or a combination thereof.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shahaji B. More, Huai-Tei YANG, Zheng-Yang PAN, Shih-Chieh CHANG, Chun-Chieh WANG, Cheng-Han Lee
  • Patent number: 10651287
    Abstract: A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium (SiGe) and further includes gallium (Ga) in an upper portion of the epitaxial layer that is in contact with the silicide feature.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: May 12, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shahaji B. More, Chun Hsiung Tsai, Shih-Chieh Chang, Kuo-Feng Yu, Cheng-Yi Peng
  • Publication number: 20200135913
    Abstract: A semiconductor device includes a substrate; a fin protruding above the substrate, the fin including a compound semiconductor material that includes a semiconductor material and a first dopant, the first dopant having a different lattice constant than the semiconductor material, where a concentration of the first dopant in the fin changes along a first direction from an upper surface of the fin toward the substrate; a gate structure over the fin; a channel region in the fin and directly under the gate structure; and source/drain regions on opposing sides of the gate structure, the source/drain regions including a second dopant, where a concentration of the second dopant at a first location within the channel region is higher than that at a second location within the channel region, where the concentration of the first dopant at the first location is lower than that at the second location.
    Type: Application
    Filed: October 31, 2018
    Publication date: April 30, 2020
    Inventors: Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee