Patents by Inventor Shang-Chieh Chien

Shang-Chieh Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EUV metal droplet catchers
    Patent number: 10871719
    Abstract: A droplet catcher includes a tube main body and baffles arranged along a length direction of the tube main body.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sheng-Ta Lin, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien
  • Semiconductor apparatus and method of operating the same
    Patent number: 10859918
    Abstract: A method for operating a semiconductor apparatus includes generating a plurality of target droplets, deforming the target droplets into a plurality of target plumes respectively, changing an orientation of at least one of the target plumes, and generating a plurality of EUV radiations from the target plumes respectively. At least one of the EUV radiations irradiates an area on the light collector different from other EUV radiations in response to the orientation of the at least one of the target plumes.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Hung Chen, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • EUV light source and apparatus for lithography
    Patent number: 10859928
    Abstract: An extreme ultraviolet (EUV) radiation source apparatus includes a collector and a target droplet generator for generating a tin (Sn) droplet. A debris collection device is disposed over a reflection surface of the collector, and at least one drip hole is located between the debris collection device and the collector. A tin bucket for collecting debris from the debris collection device is located below the at least one drip hole, and a tube or guide rod extends from the drip hole to the tin bucket.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chih Chen, Sheng-Kang Yu, Chi Yang, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • OPTICAL IMAGING APPARATUS
    Publication number: 20200371409
    Abstract: An optical imaging apparatus includes a plurality of optical lenses. The optical lenses are arranged along an optical axis to capture an image in an image capture direction and project the image on an imaging plane. The plurality of optical lenses are divided into at least one fixed lens set and at least one movable lens set. The fixed lens set is fixedly disposed, and the movable lens set is configured to move relative to the fixed lens set, so as to adjust focal lengths of the optical lenses.
    Type: Application
    Filed: August 13, 2020
    Publication date: November 26, 2020
    Applicant: LUXVISIONS INNOVATION LIMITED
    Inventors: Hai-Jo Huang, Chiang-Yuan Chuang, Cheng-Te Tseng, Shang-Chieh Chien
  • System and method for extreme ultraviolet source control
    Patent number: 10842009
    Abstract: A method for extreme ultraviolet (EUV) lithography includes generating a target droplet, producing a target plume by heating the target droplet with a first laser pulse, directing first and second laser beams onto the target plume, and receiving the first and the second laser beams reflected by the target plume.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: November 17, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu
  • RADIATION SOURCE APPARATUS AND METHOD FOR DECREASING DEBRIS IN RADIATION SOURCE APPARATUS
    Publication number: 20200348607
    Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
    Type: Application
    Filed: July 13, 2020
    Publication date: November 5, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi YANG, Ssu-Yu CHEN, Shang-Chieh CHIEN, Chieh HSIEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • EUV VESSEL INSPECTION METHOD AND RELATED SYSTEM
    Publication number: 20200348241
    Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Chun-Lin Louis CHANG, Shang-Chieh CHIEN, Shang-Ying WU, Li-Kai CHENG, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG, Anthony YEN, Chia-Chen CHEN
  • Light source, EUV lithography system, and method for generating EUV radiation
    Patent number: 10824083
    Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: November 3, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • METHOD AND APPARATUS FOR REMOVING DEBRIS FROM COLLECTOR
    Publication number: 20200331038
    Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.
    Type: Application
    Filed: April 18, 2019
    Publication date: October 22, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Ying WU, Ming-Hsun TSAI, Sheng-Kang YU, Yung-Teng YU, Chi YANG, Shang-Chieh CHIEN, Chia-Chen CHEN, Li-Jui CHEN, Po-Chung CHENG
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 10802406
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chieh Hsieh, Kuan-Hung Chen, Chun-Chia Hsu, Shang-Chieh Chien, Liu Bo-Tsun, Li-Jui Chen, Po-Chung Cheng
  • Radiation source for lithography exposure process
    Patent number: 10802405
    Abstract: A method for generating EUV radiation is provided. The method includes generating a target droplet with a target droplet generator. The method further includes recording an image of the target droplet on a first image plane to detect a first position of the target droplet. The method also includes recording an image of the target droplet on a second image plane to detect a second position of the target droplet. In addition, the method includes projecting a laser pulse onto the target droplet when the target droplet is located on a focus plane. The method further includes adjusting at least one parameter of the target droplet generator according to the first position and the second position.
    Type: Grant
    Filed: September 7, 2018
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Radiation Source Apparatus
    Publication number: 20200314990
    Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 1, 2020
    Inventors: Ssu-Yu CHEN, Chi YANG, Che-Chang HSU, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • EXTREME ULTRAVIOLET RADIATION SOURCE AND CLEANING METHOD THEREOF
    Publication number: 20200314989
    Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.
    Type: Application
    Filed: June 12, 2020
    Publication date: October 1, 2020
    Inventors: Chi YANG, Sheng-Ta LIN, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • Radiation source apparatus
    Patent number: 10791616
    Abstract: A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: September 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu Chen, Chi Yang, Che-Chang Hsu, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • RADIATION SOURCE FOR LITHOGRAPHY PROCESS
    Publication number: 20200278617
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Communication control method
    Patent number: 10725384
    Abstract: A method includes operation below. A first task is performed by a control circuit according to a first request from a processor. A second request, for triggering a second task to be performed by the control circuit, is received by an interface circuit. A first data rate, for transmitting first data generated in the first task, is calculated by the interface circuit. A second data rate, for transmitting second data to be generated in the second task, is estimated by the interface circuit. The second task other than the first task is performed by the control circuit. The first data and the second data are transmitted from the control circuit to the processor in a condition that a sum of the first data rate and the second data rate complies with a bandwidth of a data switch coupled between the control circuit and the processor.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: July 28, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Chen Chang, Shao-Wei Luo, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • EUV vessel inspection method and related system
    Patent number: 10718718
    Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
    Type: Grant
    Filed: September 29, 2019
    Date of Patent: July 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Shang-Chieh Chien, Shang-Ying Wu, Li-Kai Cheng, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng, Anthony Yen, Chia-Chen Chen
  • Radiation source apparatus, EUV lithography system, and method for decreasing debris in EUV lithography system
    Patent number: 10712676
    Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: July 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Extreme ultraviolet radiation source and cleaning method thereof
    Patent number: 10687410
    Abstract: An extreme ultraviolet radiation source is provided, including a vessel, an optical collector, and a gas scrubber. The vessel has a gas inlet and a gas outlet. The optical collector is disposed within the vessel and configured to collect and reflect extreme ultraviolet light produced in the vessel. A cleaning gas is introduced into the vessel through the gas inlet to clean the surface of the optical collector. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the size of the gas passage close to the gas outlet is smaller than the size of the gas passage away from the gas outlet.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: June 16, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Sheng-Ta Lin, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Semiconductor integrated circuit fabrication with pattern-reversing process
    Patent number: 10685846
    Abstract: A method of fabricating a semiconductor integrated circuit (IC) is disclosed. An inverse mask is provided. A sacrificial layer is deposited over a substrate. A patterned photoresist layer is formed over the sacrificial layer using the inverse mask. The sacrificial layer is then etched through the patterned photoresist layer to form a patterned sacrificial layer. A hard mask layer is deposited over the patterned sacrificial layer. The patterned sacrificial layer is then removed to form a second pattern on the hard mask layer.
    Type: Grant
    Filed: May 16, 2014
    Date of Patent: June 16, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Chin Chien, Jui-Ching Wu, Shu-Hao Chang, Shang-Chieh Chien, Jen-Yang Chung, Kuo-Chang Kau, Jeng-Horng Chen