Patents by Inventor Shang-Chieh Chien

Shang-Chieh Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SYSTEM AND METHOD FOR PERFORMING EXTREME ULTRAVIOLET PHOTOLITHOGRAPHY PROCESSES
    Publication number: 20210349396
    Abstract: A photolithography system utilizes tin droplets to generate extreme ultraviolet radiation for photolithography. The photolithography system irradiates the droplets with a laser. The droplets become a plasma and emit extreme ultraviolet radiation. The photolithography system senses contamination of a collector mirror by the tin droplets and adjusts the flow of a buffer fluid to reduce the contamination.
    Type: Application
    Filed: March 5, 2021
    Publication date: November 11, 2021
    Inventors: Tai-Yu CHEN, Sagar Deepak KHIVSARA, Kuo-An LIU, Chieh HSIEH, Shang-Chieh CHIEN, Gwan-Sin CHANG, Kai Tak LAM, Li-Jui CHEN, Heng-Hsin LIU, Chung-Wei WU, Zhiqiang WU
  • Droplet generator, EUV lithography device and method of generating a series of droplets using a droplet generator
    Patent number: 11172566
    Abstract: A droplet generator includes a steering system, a reservoir, a nozzle, a first heater, a second heater and a third heater. The steering system is used for controlling a position of droplet release of the droplet generator. The reservoir is held on the steering system for storing tin. The nozzle is connected with the reservoir for generating tin droplets, wherein the nozzle comprises at least a first zone, a second zone and a third zone connected in sequence. The first heater surrounds a peripheral surface of the nozzle in the first zone. The second heater surrounds a peripheral surface of the nozzle in the second zone. The third heater surrounds a peripheral surface of the nozzle in the third zone, wherein the heating of the first heater, the second heater and the third heater are separately controlled.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: November 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jen-Hung Hsiao, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien
  • Method and device for measuring contamination in EUV source
    Patent number: 11166361
    Abstract: A lithography apparatus includes an extreme ultraviolet (EUV) scanner, an EUV source coupled to the EUV scanner, a quartz crystal microbalance and a feedback controller. The quartz crystal microbalance is disposed on an internal surface of at least one of the EUV source and the EUV scanner. The feedback controller is coupled to the quartz crystal microbalance and one or more of a radiation source, a droplet generator, and optical guide elements controlling the trajectory of the radiation source associated with the EUV source.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: November 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Hung Chen, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 11153959
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation comprises a droplet generator, an excitation laser source, an energy detector, and a feedback controller. The droplet generator is configured to generate target droplets. The excitation laser is configured to generate a pre-pulse and a main pulse to convert the target droplets to plasma by heating. The energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. The feedback controller is configured to adjust a time delay between a subsequent pre-pulse and main pulse generated by the excitation laser based on the variation in EUV energy generated by a given main pulse.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien, Yen-Shuo Su, Chieh Hsieh, Chi Yang
  • PARTICLE IMAGE VELOCIMETRY OF EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEMS
    Publication number: 20210294220
    Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.
    Type: Application
    Filed: June 7, 2021
    Publication date: September 23, 2021
    Inventors: En Hao LAI, Chi YANG, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • APPARATUS AND METHOD FOR GENERATING EXTREME ULTRAVIOLET RADIATION
    Publication number: 20210274627
    Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.
    Type: Application
    Filed: May 17, 2021
    Publication date: September 2, 2021
    Inventors: Wei-Chih LAI, Han-Lung CHANG, Chi YANG, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • EUV vessel inspection method and related system
    Patent number: 11092555
    Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
    Type: Grant
    Filed: July 20, 2020
    Date of Patent: August 17, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Lin Louis Chang, Shang-Chieh Chien, Shang-Ying Wu, Li-Kai Cheng, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng, Anthony Yen, Chia-Chen Chen
  • EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM WITH HEATED TIN VANE BUCKET HAVING A HEATED COVER
    Publication number: 20210247702
    Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a volume to collect liquid tin debris remaining after a plasma generation process, a cover coupled to the volume, wherein the cover comprises at least one opening to allow the liquid tin debris to fall through the at least one opening of the cover and into the volume, and a heater coupled to the cover, wherein the heater is to melt solid tin that forms from cooling of the liquid tin debris on a surface around the at least one opening of the cover.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu CHEN, Shang-Chieh CHIEN, Li-Jui CHEN
  • LIGHT SOURCE FOR LITHOGRAPHY EXPOSURE PROCESS
    Publication number: 20210243875
    Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the operation of exciting the targets with the laser generator includes: irradiating a pre-pulse laser on the targets to expand the targets; detecting conditions of expanded targets; and adjusting at least one parameter of the laser generator according to the measured period of time and the conditions when the measured period of time is different from a predetermined value. The parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.
    Type: Application
    Filed: April 26, 2021
    Publication date: August 5, 2021
    Inventors: Chieh HSIEH, Shang-Chieh CHIEN, Chun-Chia HSU, Bo-Tsun LIU, Tzung-Chi FU, Li-Jui CHEN, Po-Chung CHENG
  • Image-capturing assembly
    Patent number: 11073746
    Abstract: An image-capturing assembly includes a circuit board, an optical filter, an image-capturing element between the circuit board and the optical filter, and a holder. The holder includes a fixing portion. The image-capturing element is on the circuit board and electrically connected to the circuit board. The holder is on an external side of the image-capturing element. The fixing portion has an upper surface and a lower surface opposite to each other, and the lower surface is fixed on the circuit board. The optical filter is fixed on the upper surface of the fixing portion.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: July 27, 2021
    Assignee: GUANGZHOU LUXVISIONS INNOVATION TECHNOLOGY LIMITED
    Inventors: Kuo-Hao Peng, Shang-Chieh Chien, Yao-Chung Chang
  • EXTREME ULTRAVIOLET CONTROL SYSTEM
    Publication number: 20210223701
    Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.
    Type: Application
    Filed: April 5, 2021
    Publication date: July 22, 2021
    Inventors: Jen-Yang CHUNG, Chieh HSIEH, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • EUV LITHOGRAPHY SYSTEM AND METHOD FOR DECREASING DEBRIS IN EUV LITHOGRAPHY SYSTEM
    Publication number: 20210223708
    Abstract: Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.
    Type: Application
    Filed: March 18, 2021
    Publication date: July 22, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi YANG, Ssu-Yu CHEN, Shang-Chieh CHIEN, Chieh HSIEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Extreme ultraviolet radiation source and cleaning method thereof
    Patent number: 11071191
    Abstract: An extreme ultraviolet radiation source is provided, including a vessel and a gas scrubber. The vessel has a gas inlet from which a cleaning gas is supplied into the vessel and a gas outlet from which the cleaning gas exits the vessel. The gas scrubber is disposed within the vessel, arranged such that the cleaning gas leaves the vessel through the gas outlet after flowing through the gas scrubber. The gas scrubber has a number of gas passages to allow the cleaning gas to flow through, and the sizes of the gas passages vary according to the distance between each of the gas passages and the gas outlet.
    Type: Grant
    Filed: June 12, 2020
    Date of Patent: July 20, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chi Yang, Sheng-Ta Lin, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • EUV RADIATION SOURCE APPARATUS FOR LITHOGRAPHY
    Publication number: 20210208508
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
    Type: Application
    Filed: March 22, 2021
    Publication date: July 8, 2021
    Inventors: Yu-Chih CHEN, Po-Chung CHENG, Li-Jui CHEN, Shang-Chieh CHIEN, Sheng-Kang YU, Wei-Chun YEN
  • LITHOGRAPHY SYSTEM AND CLEANING METHOD THEREOF
    Publication number: 20210191284
    Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Ta Lin, Li-Jui Chen, Shang-Chieh Chien
  • RADIATION SOURCE FOR LITHOGRAPHY PROCESS
    Publication number: 20210173316
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Application
    Filed: February 19, 2021
    Publication date: June 10, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Particle image velocimetry of extreme ultraviolet lithography systems
    Patent number: 11029324
    Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: En Hao Lai, Chi Yang, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • METHOD OF OPERATING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
    Publication number: 20210149317
    Abstract: A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.
    Type: Application
    Filed: November 14, 2019
    Publication date: May 20, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsiang CHEN, Sheng-Kang YU, Shang-Chieh CHIEN, Li-Jui CHEN
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 11013097
    Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: May 18, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chih Lai, Han-Lung Chang, Chi Yang, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Lithography apparatus and cleaning method thereof
    Patent number: 10990026
    Abstract: A method for cleaning a lithography apparatus is provided. The method includes flowing a major cleaning agent in volume over a reflective surface of a collector of the lithography apparatus; and flowing a minor cleaning agent in volume intermittently over the reflective surface of the collector, so as to clean the reflective surface of the collector.
    Type: Grant
    Filed: November 5, 2018
    Date of Patent: April 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Sheng-Ta Lin, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng