Patents by Inventor Shang-Chieh Chien

Shang-Chieh Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • EXTREME ULTRAVIOLET LITHOGRAPHY SYSTEM WITH HEATED TIN VANE BUCKET HAVING A HEATED COVER
    Publication number: 20220225490
    Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a droplet generator, a droplet catcher, a laser source, a plurality of vanes, and a bucket. The droplet generator is to generate tin droplets. The droplet catcher is opposite to the droplet generator to catch the tin droplets. The laser source is to generate a laser beam striking the tin droplets to form a plasma. The plurality of vanes are arranged around an axis to collect tin debris created from the plasma. The bucket is connected to the vanes and includes a cover, a vane bucket, and a heater. The cover has an opening. The vane bucket is surrounded by the cover. The heater is on a sidewall of the cover and spaced apart from the droplet catcher.
    Type: Application
    Filed: April 4, 2022
    Publication date: July 14, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu CHEN, Shang-Chieh CHIEN, Li-Jui CHEN
  • Lithography system with an embedded cleaning module
    Patent number: 11378894
    Abstract: The present disclosure provides a lithography system. The lithography system includes an exposing module configured to perform a lithography exposing process using a mask secured on a mask stage; and a cleaning module integrated in the exposing module and designed to clean at least one of the mask and the mask stage using an attraction mechanism.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: July 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shang-Chieh Chien, Jeng-Horng Chen, Jui-Ching Wu, Chia-Chen Chen, Hung-Chang Hsieh, Chi-Lun Lu, Chia-Hao Yu, Shih-Ming Chang, Anthony Yen
  • RADIATION SOURCE FOR LITHOGRAPHY PROCESS
    Publication number: 20220197160
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Application
    Filed: March 14, 2022
    Publication date: June 23, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Ying WU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • EUV LIGHT SOURCE AND APPARATUS FOR LITHOGRAPHY
    Publication number: 20220191999
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.
    Type: Application
    Filed: March 7, 2022
    Publication date: June 16, 2022
    Inventors: Shang-Chieh CHIEN, Po-Chung CHENG, Chia-Chen CHEN, Jen-Yang CHUNG, Li-Jui CHEN, Tzung-Chi FU, Shang-Ying WU
  • Photolithography device having illuminator and method for adjusting intensity uniformity
    Patent number: 11360392
    Abstract: An illuminator includes a first facet mirror receiving and reflecting an exposure radiation, an adjustable shielding element disposed on the first facet mirror, the adjustable shielding element adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror, and a second facet mirror receiving and reflecting the exposure radiation reflected by the first facet mirror.
    Type: Grant
    Filed: June 3, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Che-Chang Hsu, Chieh-Jen Cheng, Li-Jui Chen, Shang-Chieh Chien, Chao-Chen Chang, Ssu-Yu Chen
  • Mask Cleaning
    Publication number: 20220179326
    Abstract: A lithography system includes a first load lock chamber configured to receive a mask, a cleaning module configured to clean the mask, a second load lock chamber configured to receive a wafer, an exposure module configured to expose the wafer to a light source through use of the cleaned mask. A direct path is provided between the first load lock chamber and the exposure module allowing the first load lock chamber to directly couple to the exposure module without through the cleaning module.
    Type: Application
    Filed: February 22, 2022
    Publication date: June 9, 2022
    Inventors: Shu-Hao Chang, Norman Chen, Jeng-Horng Chen, Kuo-Chang Kau, Ming-Chin Chien, Shang-Chieh Chien, Anthony Yen, Kevin Huang
  • Light source, EUV lithography system, and method for generating EUV radiation
    Patent number: 11333983
    Abstract: A light source for EUV is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide first laser pulses according to a control signal to irradiate the target droplets in the source vessel. The controller is configured to provide the control signal according to at least two of process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. When the average value or the standard deviation of the temperature of the source vessel and the droplet positions of the target droplets exceed the predetermined range, the controller is configured to provide the control signal to the laser generator to stop providing the first laser pulses.
    Type: Grant
    Filed: October 22, 2020
    Date of Patent: May 17, 2022
    Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Method and apparatus for controlling extreme ultraviolet light
    Patent number: 11320744
    Abstract: In accordance with some embodiments, a method of controlling an extreme ultraviolet (EUV) radiation in lithography system is provided. The method includes generating a plurality of target droplets. The method also includes generating a pre-pulse and a main pulse from an excitation laser module to generate EUV light and reflecting the EUV light by a collector mirror. The method further includes measuring a separation between a pre-pulse and a main pulse. Moreover, the method includes determining whether the separation between the pre-pulse and the main pulse in the y-axis is changed, if not adjusting a configurable parameter of the excitation laser module to set the variation in the energy of the EUV light within an acceptable range.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: May 3, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu Chen, Shang-Chieh Chien, Li-Jui Chen
  • Extreme ultraviolet lithography system with heated tin vane bucket having a heated cover
    Patent number: 11297710
    Abstract: An extreme ultraviolet (EUV) light source and a method for patterning a resist layer on a substrate using the EUV light source are disclosed. For example, the EUV light source includes a volume to collect liquid tin debris remaining after a plasma generation process, a cover coupled to the volume, wherein the cover comprises at least one opening to allow the liquid tin debris to fall through the at least one opening of the cover and into the volume, and a heater coupled to the cover, wherein the heater is to melt solid tin that forms from cooling of the liquid tin debris on a surface around the at least one opening of the cover.
    Type: Grant
    Filed: February 11, 2020
    Date of Patent: April 5, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu Chen, Shang-Chieh Chien, Li-Jui Chen
  • PARTICLE REMOVAL DEVICE AND METHOD
    Publication number: 20220100100
    Abstract: A particle removal device, along with methods of using such, are described. The device includes a handheld module having a body. A first one or more channels and a second one or more channels are formed in the body. The body includes a nozzle, and the handheld module is configured to provide suction by the nozzle and to inject an ionized fluid stream by the nozzle. The body further includes a handle attached to the nozzle.
    Type: Application
    Filed: April 26, 2021
    Publication date: March 31, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Hsuan Wu, Ming-Hsun Tsai, Shang-Chieh Chien, Li-Jui Chen, Heng-Hsin Liu
  • PROTECTIVE RING STRUCTURE FOR VACUUM INTERFACE AND METHOD OF USING THE SAME
    Publication number: 20220100101
    Abstract: An assembly for use with an extreme ultraviolet (EUV) chamber, along with methods of using such, are described. The assembly includes a ring structure. The ring structure includes an outer ring and an inner ring disposed radially inward of the outer ring. The assembly also includes a vacuum interface to be attached and in contact with the inner ring, wherein the inner ring has an opening that is size adjustable to allow a device to pass through and into the vacuum interface.
    Type: Application
    Filed: June 11, 2021
    Publication date: March 31, 2022
    Inventors: Ming-Hsun TSAI, Yu-Fa LO, Shang-Chieh CHIEN
  • Lithography system and cleaning method thereof
    Patent number: 11287755
    Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.
    Type: Grant
    Filed: March 8, 2021
    Date of Patent: March 29, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Ta Lin, Li-Jui Chen, Shang-Chieh Chien
  • Droplet generator and method of servicing a photolithographic tool
    Patent number: 11275317
    Abstract: A photolithographic apparatus includes a droplet generator, a droplet generator maintenance system, and a controller communicating with the droplet generator maintenance system. The droplet generator maintenance system operatively communicates with the droplet generator, a coolant distribution unit, a gas supply unit, and a supporting member. The gas supply unit includes a heat exchange assembly and an air heating assembly. The coolant distribution unit is configured to control the temperature of the droplet generator within the acceptable droplet generator range.
    Type: Grant
    Filed: February 26, 2021
    Date of Patent: March 15, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Huan Chen, Cheng-Hsuan Wu, Ming-Hsun Tsai, Shang-Chieh Chien, Li-Jui Chen
  • Radiation source for lithography process
    Patent number: 11275318
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Grant
    Filed: February 19, 2021
    Date of Patent: March 15, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • EUV light source and apparatus for lithography
    Patent number: 11272606
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.
    Type: Grant
    Filed: November 1, 2017
    Date of Patent: March 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Chieh Chien, Po-Chung Cheng, Chia-Chen Chen, Jen-Yang Chung, Li-Jui Chen, Tzung-Chi Fu, Shang-Ying Wu
  • Apparatus and method for generating extreme ultraviolet radiation
    Patent number: 11269257
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
    Type: Grant
    Filed: October 12, 2020
    Date of Patent: March 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chieh Hsieh, Kuan-Hung Chen, Chun-Chia Hsu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Mask cleaning
    Patent number: 11256179
    Abstract: A lithography system includes a load lock chamber comprising an opening configured to receive a mask, an exposure module configured to expose a semiconductor wafer to a light source through use of the mask, and a cleaning module embedded inside the lithography tool, the cleaning module being configured to clean carbon particles from the mask.
    Type: Grant
    Filed: October 22, 2019
    Date of Patent: February 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shu-Hao Chang, Norman Chen, Jeng-Horng Chen, Kuo-Chang Kau, Ming-Chin Chien, Shang-Chieh Chien, Anthony Yen, Kevin Huang
  • Method of operating semiconductor apparatus and semiconductor apparatus
    Patent number: 11243479
    Abstract: A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.
    Type: Grant
    Filed: November 14, 2019
    Date of Patent: February 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsiang Chen, Sheng-Kang Yu, Shang-Chieh Chien, Li-Jui Chen
  • Process system and operating method thereof
    Patent number: 11237482
    Abstract: A device is disclosed that includes a master controller, a process chamber, a local controller, a switch, and a data storage. The process chamber is configured to generate a data according to a EUV light generation process. The local controller is coupled to the master controller and configured to control the process chamber. The switch is coupled between the master controller and the local controller, wherein the switch is configured to provide paths for the local controller to communicate with the master controller. The data storage directly connected to the local controller and configured to store the data. The local controller communicates directly with the data storage.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: February 1, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chao-Chen Chang, Shao-Wei Luo, Jen-Yang Chung, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • System and method for extreme ultraviolet source control
    Patent number: 11224115
    Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: January 11, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu