Patents by Inventor Shang-Chieh Chien

Shang-Chieh Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light source for lithography exposure process
    Patent number: 10993308
    Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the method includes adjusting at least one parameter of the laser generator according to the measured period of time, when the measured period of time is different from a predetermined value, wherein the parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: April 27, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Chieh Hsieh, Shang-Chieh Chien, Chun-Chia Hsu, Bo-Tsun Liu, Tzung-Chi Fu, Li-Jui Chen, Po-Chung Cheng
  • System and method for performing lithography process in semiconductor device fabrication
    Patent number: 10976672
    Abstract: Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: April 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jui-Ching Wu, Jeng-Horng Chen, Chia-Chen Chen, Shu-Hao Chang, Shang-Chieh Chien, Ming-Chin Chien, Anthony Yen
  • Extreme ultraviolet control system for adjusting droplet illumination parameters
    Patent number: 10969690
    Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: April 6, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jen-Yang Chung, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Radiation source apparatus and method for decreasing debris in radiation source apparatus
    Patent number: 10955762
    Abstract: A radiation source apparatus is provided. The radiation source apparatus includes a chamber, an exhaust module, a measuring device, a gas supply module and a controller. The exhaust module is configured to extract debris caused by unstable target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The gas supply module is configured to provide a gas into the chamber according to a second gas flow rate. The controller is configured to adjust the first gas flow rate and the second gas flow according to the measured concentration of the debris.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: March 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chi Yang, Ssu-Yu Chen, Shang-Chieh Chien, Chieh Hsieh, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • EUV radiation source apparatus for lithography
    Patent number: 10955752
    Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Chih Chen, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien, Sheng-Kang Yu, Wei-Chun Yen
  • Lithography system and method thereof
    Patent number: 10955750
    Abstract: A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chun Yen, Chi Yang, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Lithography system and cleaning method thereof
    Patent number: 10942459
    Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: March 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Ta Lin, Li-Jui Chen, Shang-Chieh Chien
  • System and Method for Extreme Ultraviolet Source Control
    Publication number: 20210068241
    Abstract: A method for extreme ultraviolet (EUV) lithography includes loading an EUV mask to a lithography system; loading a wafer to the lithography system, wherein the wafer includes a resist layer sensitive to EUV radiation; producing EUV radiation by heating target plumes using a radiation source; and exposing the resist layer to the EUV radiation while monitoring a speed of the target plumes.
    Type: Application
    Filed: November 13, 2020
    Publication date: March 4, 2021
    Inventors: Chun-Chia Hsu, Chieh Hsieh, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng, Tzung-Chi Fu, Bo-Tsun Liu
  • LIGHT SOURCE, EUV LITHOGRAPHY SYSTEM, AND METHOD FOR GENERATING EUV RADIATION
    Publication number: 20210055664
    Abstract: A light source for EUV is provided. The light source includes a target droplet generator, a laser generator, and a controller. The target droplet generator is configured to provide target droplets to a source vessel. The laser generator is configured to provide first laser pulses according to a control signal to irradiate the target droplets in the source vessel. The controller is configured to provide the control signal according to at least two of process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. When the average value or the standard deviation of the temperature of the source vessel and the droplet positions of the target droplets exceed the predetermined range, the controller is configured to provide the control signal to the laser generator to stop providing the first laser pulses.
    Type: Application
    Filed: October 22, 2020
    Publication date: February 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi YANG, Ssu-Yu CHEN, Shang-Chieh CHIEN, Chieh HSIEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Radiation source for lithography process
    Patent number: 10928741
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: February 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • EUV radiation source for lithography exposure process
    Patent number: 10925142
    Abstract: An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: February 16, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chia Hsu, Kuan-Hung Chen, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • APPARATUS AND METHOD FOR GENERATING EXTREME ULTRAVIOLET RADIATION
    Publication number: 20210041787
    Abstract: An apparatus for generating extreme ultraviolet (EUV) radiation includes a droplet generator configured to generate target droplets. An excitation laser is configured to heat the target droplets using excitation pulses to convert the target droplets to plasma. An energy detector is configured to measure a variation in EUV energy generated when the target droplets are converted to plasma. A feedback controller is configured to adjust parameters of the droplet generator and/or the excitation laser based on the variation in EUV energy.
    Type: Application
    Filed: October 12, 2020
    Publication date: February 11, 2021
    Inventors: Chieh HSIEH, Kuan-Hung CHEN, Chun-Chia HSU, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • LITHOGRAPHY SYSTEM AND CLEANING METHOD THEREOF
    Publication number: 20210033990
    Abstract: A lithography system and a cleaning method thereof are provided. The lithography system includes a light source generator. The light source generator includes a collector, a droplet generator and a droplet catcher. The droplet generator and the droplet catcher are facing each other, and disposed at a region surrounding the collector. The cleaning method includes: shifting the droplet generator out of the light source generator via a port of the light source generator; inserting a shove assembly into the light source generator via the port; using a borescope attached to the shovel assembly to identify a location of a deposit formed by droplets generated by the droplet generator; using the shovel assembly to remove and collect the deposit; and withdrawing the shovel assembly along with the borescope from the light source generator via the port.
    Type: Application
    Filed: March 2, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Ta Lin, Li-Jui Chen, Shang-Chieh Chien
  • PHOTOGRAPHY DEVICE HAVING ILLUMINATOR AND METHOD FOR ADJUSTING INTENSITY UNIFORMITY
    Publication number: 20210033982
    Abstract: An illuminator includes a first facet mirror receiving and reflecting an exposure radiation, an adjustable shielding element disposed on the first facet mirror, the adjustable shielding element adjusting intensity uniformity of the exposure radiation reflected by the first facet mirror, and a second facet mirror receiving and reflecting the exposure radiation reflected by the first facet mirror.
    Type: Application
    Filed: June 3, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Che-Chang Hsu, Chieh-Jen Cheng, Li-Jui Chen, Shang-Chieh Chien, Chao-Chen Chang, Ssu-Yu Chen
  • DROPLET GENERATOR, EUV LITHOGRAPHY DEVICE AND METHOD OF GENERATING A SERIES OF DROPLETS USING A DROPLET GENERATOR
    Publication number: 20210037634
    Abstract: A droplet generator includes a steering system, a reservoir, a nozzle, a first heater, a second heater and a third heater. The steering system is used for controlling a position of droplet release of the droplet generator. The reservoir is held on the steering system for storing tin. The nozzle is connected with the reservoir for generating tin droplets, wherein the nozzle comprises at least a first zone, a second zone and a third zone connected in sequence. The first heater surrounds a peripheral surface of the nozzle in the first zone. The second heater surrounds a peripheral surface of the nozzle in the second zone. The third heater surrounds a peripheral surface of the nozzle in the third zone, wherein the heating of the first heater, the second heater and the third heater are separately controlled.
    Type: Application
    Filed: March 2, 2020
    Publication date: February 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jen-Hung Hsiao, Po-Chung Cheng, Li-Jui Chen, Shang-Chieh Chien
  • LITHOGRAPHY SYSTEM AND METHOD THEREOF
    Publication number: 20210018845
    Abstract: A method includes generating a plasma that emits a first EUV radiation in a vessel at a first gas exhaust rate of the vessel; directing the first EUV radiation to a first substrate using a collector in the vessel; halting the generating of the first EUV radiation; and ejecting a gas past the collector at a second gas exhaust rate of the vessel, in which the second gas exhaust rate is greater than the first gas exhaust rate after the halting.
    Type: Application
    Filed: July 16, 2019
    Publication date: January 21, 2021
    Inventors: Wei-Chun YEN, Chi YANG, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG
  • Vessel for extreme ultraviolet radiation source
    Patent number: 10877378
    Abstract: A source for generating extreme ultraviolet (EUV) radiation includes a chamber enclosing a low pressure environment. A gas inlet is configured to provide a cleaning gas in the chamber. A plurality of exhaust ports, each having a corresponding gate valve including a scanner gate valve corresponding to an exhaust port separating the chamber from an EUV scanner are provided to the chamber. A pressure sensor is disposed inside the chamber and adjacent to the scanner gate valve. A controller is configured to control the gate valves other than the scanner gate valve based on an output of the pressure sensor.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ssu-Yu Chen, Che-Chang Hsu, Chi Yang, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng
  • Method and apparatus for removing debris from collector
    Patent number: 10875060
    Abstract: Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.
    Type: Grant
    Filed: April 18, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Ying Wu, Ming-Hsun Tsai, Sheng-Kang Yu, Yung-Teng Yu, Chi Yang, Shang-Chieh Chien, Chia-Chen Chen, Li-Jui Chen, Po-Chung Cheng
  • Collector pellicle
    Patent number: 10880981
    Abstract: An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shang-Chieh Chien, Chi Yang, Jen-Yang Chung, Shao-Wei Luo, Tzung-Chi Fu, Chun-Kuang Chen, Li-Jui Chen, Po-Chung Cheng
  • Extreme ultraviolet radiation source
    Patent number: 10877190
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chi Yang, Sheng-Ta Lin, Jen-Yang Chung, Shang-Chieh Chien, Li-Jui Chen, Po-Chung Cheng