Abstract: Policy rules for a particular communication mode are adapted and implemented for other communication modes in a dynamic and/or automated manner. Organization level and/or personal policies for one communication mode are evaluated and modified as necessary for other communication modes, which may be integrated with each other or distinctly managed. Rules may be adapted based on user, groups, or policy types.

Abstract: The method and system of the present invention provides an improved technique for replacing, implementing and managing computer-related assets. A technician accesses the World Wide Web through a user's computer. The information resident on the computer, including information regarding the computer and the user's preferences, are downloaded to a remote storage medium through the World Wide Web. Once downloaded, all information may be removed from the user's computer. Subsequently, the technician accesses another computer such as, for example, a new computer that has been assigned to the same user. The technician accesses the World Wide Web through the new computer and downloads the information previously stored on the remote storage medium. This information can then be used to install the user's prior applications, settings and preferences on the new computer.

Abstract: A connector system is disclosed for connecting an exhaust extraction system to the exhaust pipe of an internal combustion engine. The connector system comprises a first flange, which can be connected to the exhaust pipe of the engine. A second flange is connected to a conduit through which exhaust fumes are evacuated. The first and second flanges can have mating tapered surfaces, to facilitate alignment of the second flange relative to the first flange. The second flange preferably comprises magnets for providing a secure connection between the first flange and the second flange, while enabling quick release of the connection. The magnets are preferably arranged in an asymmetric configuration.

Abstract: A method is provided involving the growth of carbon nanotubes to provide giant resistance anisotropy or a low-k dielectric. The method comprises growing a plurality of one-dimensional nanostructures (18) orthogonal to a first conductive layer (14). A dielectric material (22, 32, 60) is formed covering the plurality of one-dimensional nanostructures and then etched to remove a portion of the dielectric material (22, 32, 60) to expose the ends (24, 34, 68) of the one-dimensional nanostructures (18). A second conductive layer (26, 36, 84) is formed over the dielectric material (22, 32, 60) to make contact with the ends (24, 34, 68) of the one-dimensional nanostructures (18). One or both of the first (14) and second (26, 36, 84) layers may be patterned for accessing individual or groups of the one-dimensional nanostructures (18).

Abstract: Techniques for reconciliation and remediation of messages sent by a server for storage in an archive are described. Some techniques may comprise receiving a message to be reconciled corresponding to a message sent by a server to be stored in an archive. The received message may be categorized for reconciliation, and a delivery confirmation query may be issued to the archive according to categorization of the message for reconciliation. Based on the response to the delivery confirmation query, it can be determined with certainty whether the message sent to the archive for storage is indeed stored at the archive. Other embodiments are described and claimed.

Abstract: A semiconductor substrate having recesses filled with heteroepitaxial silicon-containing material with different portions having different impurity concentrations. Strained layers can fill recessed source/drain regions in a graded, bottom-up fashion. Layers can also line recess sidewalls with one concentration of strain-inducing impurity and fill the remainder to the recess with a lower concentration of the impurity. In the latter case, the sidewall liner can be tapered.

Abstract: A method for operating a locomotive is provided. The method includes coupling a processor within the locomotive to monitor at least one of an operating parameter and an equipment operation. The method also includes determining a status of a locomotive departure test using the processor and operating an interlock based on the status of the departure test, wherein the interlock is configured to regulate an operating speed of the locomotive.

Abstract: The method and system of the present invention provides an improved method for asset transition project management. Information is aggregated from a variety of sources into a centralized computerized database. Thereafter, assets that are electronically connected to the computerized database are monitored. If a transition occurs, information concerning the transition is input into the computerized database on a real-time basis during the implementation of the transition. The information input into the computerized database can be used to manage the transition.

Abstract: A method for reviewing effectiveness of a rules system applying one or more rules to communication traffic of a group of users. The method analyzes a log containing one or more communications reviewed by the rules system to determine if the communications in the log conforms to the communications policy. The method also identifies one or more of the rules of the rules system violated by the communications when the analyzing the log determines that at least one of the communications in the log does not conform to the communications policy. Other methods determine the effectiveness of planned modifications to a rules system.

Abstract: A kite has a cover sheet having first and second opposed main surfaces. A frame assembly is attached to the second main surface of the cover sheet to define a body having an overall height and an overall width. The frame assembly has frame members connected together to form a generally conical-shaped sector portion defining an air passage through which air flows when the kite is in flight. A rotational vane is mounted on the frame assembly for undergoing rotation to regulate the flow of air flowing through the air passage when the kite is in flight.

Abstract: A method of forming a semiconductor device includes forming a local strain-inducing structure of a first semiconductor material at a point location within a dielectric layer. The local strain-inducing structure has a prescribed geometry with a surface disposed above a surface of the dielectric layer. A second semiconductor material is formed over the dielectric layer and the local strain inducing structure, wherein formation of a first portion of the second material over the dielectric layer provides a poly crystalline structure of the second material and wherein formation of a second portion of the second material over the local strain-inducing structure provides a single crystalline structure of the second material subject to mechanical strain by the surface of the local strain-inducing structure. The single crystalline structure serves as a strained semiconductor layer of the semiconductor device.

Abstract: According to the embodiments to the present disclosure, the process of making a dual strained channel semiconductor device includes integrating strained Si and compressed SiGe with trench isolation for achieving a simultaneous NMOS and PMOS performance enhancement. As described herein, the integration of NMOS and PMOS can be implemented in several ways to achieve NMOS and PMOS channels compatible with shallow trench isolation.

Abstract: A semiconductor device includes a mechanically strained channel, wherein the channel comprises of a single crystalline structure of a strained semiconductor layer having a non-linear geometry, the non-linear geometry including a portion of an arch shape. The semiconductor device further includes a dielectric layer, wherein a first portion of the channel is disposed overlying a point location within the dielectric layer and a second portion of the channel is disposed overlying a portion of the dielectric layer proximate to and outside of the point location. In addition, a gate is disposed proximate to the channel for controlling current flow through the channel between first and second current handling electrodes that are coupled to the channel.

Abstract: A process for forming a semiconductor device. The process includes forming a template layer for forming a layer of strained silicon. In one example a layer of graded silicon germanium is formed where the germanium is at a higher concentration at the lower portion and at a lower concentration at a top portion. When subject to a condensation process, the germanium of the top portion of the layer diffuses to a remaining portion of the silicon germanium layer. Because the silicon germanium layer has a higher concentration of germanium at lower portions, germanium pile up after condensation may be reduced at the upper portion of the remaining portion of the silicon germanium layer.

Abstract: Methods and apparatus are provided for depositing a layer of pure germanium can on a silicon substrate. This germanium layer is very thin, on the order of about 14 ?, and is less than the critical thickness for pure germanium on silicon. The germanium layer serves as an intermediate layer between the silicon substrate and the high k gate layer, which is deposited on the germanium layer. The germanium layer helps to avoid the development of an oxide interfacial layer during the application of the high k material. Application of the germanium intermediate layer in a semiconductor structure results in a high k gate functionality without the drawbacks of series capacitance due to oxide impurities. The germanium layer further improves mobility.

Abstract: A kite has a cover sheet having first and second opposed main surfaces. A frame assembly is attached to the second main surface of the cover sheet to define a body having an overall height and an overall width. The frame assembly has frame members connected together to form a generally conical-shaped sector portion defining an air passage through which air flows when the kite is in flight. A rotational vane is mounted on the frame assembly for undergoing rotation to regulate the flow of air flowing through the air passage when the kite is in flight.

Abstract: A vacancy injecting process for injecting vacancies in template layer material of an SOI substrate. The template layer material has a crystalline structure that includes, in some embodiments, both germanium and silicon atoms. A strained silicon layer is then epitaxially grown on the template layer material with the beneficial effects that straining has on electron and hole mobility. The vacancy injecting process is performed to inject vacancies and germanium atoms into the crystalline structure wherein germanium atoms recombine with the vacancies. One embodiment, a nitridation process is performed to grow a nitride layer on the template layer material and consume silicon in a way that injects vacancies in the crystalline structure while also allowing germanium atoms to recombine with the vacancies.