Abstract: An FPGA-based USB3.0/3.1 control system, including: a USB control module including a USB3.0 control module and/or a USB3.1 control module; a PCS logic module connected to the USB control module via a PIPE interface; an FPGA Serdes serial communication module connected to the PCS logic module; and an external daughter card module connected to the FPGA Serdes serial communication module, wherein the PCS logic module, the FPGA Serdes serial communication module and the external daughter card module are connected in sequence to achieve a port physical layer function for testing the USB 3.0 control module and the USB 3.1 control module. The control system solves the cumbersome problems of incomplete emulation verification, test mode limitations, and unchangeable hardware functions in the prior art.

Abstract: A USB protocol-based IP infringement identification method for USB devices, including the following steps: S1, connecting an infringement identification device at a peer side of the USB host to be tested; S2, the USB host to be tested entering compliance mode; S3, the infringement identification device sending an X.LFPS file to the USB host to be tested; S4, upon the USB host to be tested receiving the X.LFPS file, the USB host to be tested sending IP copyright information to the infringement identification device; S5, determining whether the USB host to be tested infringes the IP. The infringement identification of the USB device to be tested is performed by using the compliance mode specified in the USB protocol, which is more stable, reliable and can also save costs.

Abstract: A method of forming a semiconductor device includes providing a bottom electrode; a magnetic tunneling junction (MTJ) element over the bottom electrode; a top electrode over the MTJ element; and a sidewall spacer abutting the MTJ element, wherein at least one of the bottom electrode, the top electrode, and the sidewall spacer includes a magnetic material.

Abstract: A magnetic tunnel junction (MTJ) stack includes a reference layer, a tunnel barrier layer, a free layer, and a superparamagnetic layer. The reference layer has a fixed magnetization direction. The tunnel barrier layer is disposed on the reference layer, and includes an insulating material. The free layer has a changeable magnetization direction, and is disposed on the tunnel barrier layer opposite to the reference layer. The superparamagnetic layer is disposed on the free layer opposite to the tunnel barrier layer. Methods for manufacturing the MTJ stack are also disclosed.

Abstract: Various embodiments of the present disclosure provide a semiconductor device structure. In one embodiment, the semiconductor device structure includes a source/drain feature over a substrate, a plurality of semiconductor layers over the substrate, a gate electrode layer surrounding a portion of each of the plurality of the semiconductor layers, a gate dielectric layer in contact with the gate electrode layer, and a cap layer. The cap layer has a first portion disposed between the plurality of semiconductor layers and the source/drain feature and a second portion extending outwardly from opposing ends of the first portion. The semiconductor device structure further includes a dielectric spacer disposed between and in contact with the source/drain feature and the second portion of the cap layer.

Abstract: A scramble and descramble hardware implementation method based on data bit width expansion. After expansion, redundant terms are eliminated, and scramble/descramble operation results within the current operation cycle and the value of the shift register after shifting are calculated at once. The present method exhibits advantageous effects with respect to the scramble and descramble polynomial defined by USB3.1 and PCI-Express3.0 protocols, and can obtain a relatively small hardware delay, so that the system can work at a higher frequency.

Abstract: A method for a parallelism-aware wavelength-routed optical networks-on-chip design is proposed, which is executed by a computer, the method comprising using the computer to perform the following: providing a WRONoC netlist, design specs and design rules; performing a network construction such that potential positions of each core of a plurality of cores, a plurality of waveguides and a plurality of microring resonators (MRRs) are determined to create a topology; performing a message routing to minimize MRR type usage of the MRRs in the topology; and performing a MRR radius selection to select a radius from MRR-radius options for each MRR type in said topology based on a simulated annealing.

Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate While spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

Abstract: A semiconductor package, a semiconductor device and a shielding housing for a semiconductor package are provided. The semiconductor package includes a semiconductor chip having a first region and a second region beside the first region; and a shielding housing encasing the semiconductor chip, made of a magnetic permeable material, and including a first shielding plate, a second shielding plate opposite to the first shielding plate and a shielding wall extending between the first shielding plate and the second shielding plate. The first shielding plate has an opening exposing the first region and includes a raised portion surrounding the opening and a flat portion beside the raised portion and shielding the second region. A first distance from a level of the semiconductor chip to an outer surface of the raised portion is greater than a second distance from the level to an outer surface of the flat portion.

Abstract: A non-spectral computed tomography scanner includes a radiation source configured to emit x-ray radiation, a detector array configured to detect x-ray radiation and generate non-spectral data, and a memory configured to store a spectral image module that includes computer executable instructions including a neural network trained to produce spectral volumetric image data. The neural network is trained with training spectral volumetric image data and training non-spectral data. The non-spectral computed tomography scanner further includes a processor configured to process the non-spectral data with the trained neural network to produce spectral volumetric image data.

Abstract: A scramble and descramble hardware implementation method based on data bit width expansion. After expansion, redundant terms are eliminated, and scramble/descramble operation results within the current operation cycle and the value of the shift register after shifting are calculated at once. The present method exhibits advantageous effects with respect to the scramble and descramble polynomial defined by USB3.1 and PCI-Express3.0 protocols, and can obtain a relatively small hardware delay, so that the system can work at a higher frequency.

Abstract: A manufacturing method of a memory device are provided. The method includes following steps. A gate stacking structure is formed over a substrate. A first insulating layer, a second insulating layer and a mask material layer are sequentially formed over the substrate to cover the gate stacking structure. An ion implantation process is performed on the mask material layer to form a doped portion in the mask material layer. The doped portion caps on a top portion of the gate stacking structure. A first patterning process is performed on the mask material layer using the doped portion as a shadow mask to remove a bottom portion of the mask material layer extending along a surface of the substrate. A second patterning process is performed to remove the doped portion of the mask material layer and an exposed bottom portion of the second insulating layer surrounding the gate stacking structure.

Abstract: An MRAM cell block and a magnetic shielding structure for the MRAM cell block are incorporated into a metal interconnect of an integrated circuit (IC) device. The magnetic shielding structure may be provided by metallization layers and via layers having wires and vias that incorporate a magnetic shielding material. The magnetic shielding material may form the wires and vias, form a liner around the wires, or may be a layer of the wires. The wires and vias may also include a metal that is more conductive than the magnetic shielding material. The metal interconnect may include layers above or below the magnetic shielding structure that lack the magnetic shielding material and are more conductive. The MRAM cell block with the magnetic shielding structure is optionally provided as a standalone memory device or incorporated into a 3-D IC device that includes a second substrate having a conventional metal interconnect.

Abstract: A semiconductor package, a semiconductor device and a shielding housing for a semiconductor package are provided. The semiconductor package includes a semiconductor chip having a first region and a second region beside the first region; and a shielding housing encasing the semiconductor chip, made of a magnetic permeable material, and including a first shielding plate, a second shielding plate opposite to the first shielding plate and a shielding wall extending between the first shielding plate and the second shielding plate. The first shielding plate has an opening exposing the first region and includes a raised portion surrounding the opening and a flat portion beside the raised portion and shielding the second region. A first distance from a level of the semiconductor chip to an outer surface of the raised portion is greater than a second distance from the level to an outer surface of the flat portion.

Abstract: A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a gate stacking structure, a first insulating layer, a second insulating layer and a first spacer. The gate stacking structure is disposed over a substrate. The first insulating layer covers a top surface and a sidewall of the gate stacking structure. The second insulating layer covers a surface of the first insulating layer. A top corner region of the gate stacking structure is covered by the first and second insulating layers. The first spacer is located on the sidewall of the gate stacking structure, and covers a surface of the second insulating layer. A topmost end of the first spacer is lower than a topmost surface of the second insulating layer.

Abstract: At least two lighting modules are disposed on a printed circuit board (PCB). Each of the lighting modules includes a plurality of light emitting diode (LED) chips disposed in a non-rectangular array. Lenses are provided over the lighting modules. Each lens has a convex outer surface, and a chamber with a planar or concave inner surface facing a corresponding lighting module and disposed to cover the LED set within the chamber. A light projecting device includes a plurality of LED sets and a plurality of lenses. An orientation part couples each lighting module to the PCB at a non-zero angle.

Abstract: A method of manufacturing a memory structure including the following steps is provided. A spacer layer is formed on sidewalls of gate stack structures. A protective material layer covering the spacer layer and the gate stack structures is formed. A mask material layer is formed on the protective material layer. There is a void located in the mask material layer between two adjacent gate stack structures. A first distance is between a top of the protective material layer and a top of the mask material layer. A second distance is between a top of the void and a top of the mask material layer above the void. A third distance is between a bottom of the void and a bottom of the mask material layer below the void. The first distance is greater than a sum of the second and third distances.

Abstract: A semiconductor package, a semiconductor device and a shielding housing for a semiconductor package are provided. The semiconductor package includes a semiconductor chip having a first region and a second region beside the first region; and a shielding housing encasing the semiconductor chip, made of a magnetic permeable material, and including a first shielding plate, a second shielding plate opposite to the first shielding plate and a shielding wall extending between the first shielding plate and the second shielding plate. The first shielding plate has an opening exposing the first region and includes a raised portion surrounding the opening and a flat portion beside the raised portion and shielding the second region. A first distance from a level of the semiconductor chip to an outer surface of the raised portion is greater than a second distance from the level to an outer surface of the flat portion.

Abstract: A non-spectral computed tomography scanner (102) includes a radiation source (112) configured to emit x-ray radiation, a detector array (114) configured to detect x-ray radiation and generate non-spectral data, and a memory (134) configured to store a spectral image module (130) that includes computer executable instructions including a neural network trained to produce spectral volumetric image data. The neural network is trained with training spectral volumetric image data and training non-spectral data. The non-spectral computed tomography scanner further includes a processor (126) configured to process the non-spectral data with the trained neural network to produce spectral volumetric image data.