Abstract: A computer system is provided which performs a self-test of the memory cells of a memory device prior to loading of a computer program into the memory device, so as to determine the locations of defective memory cells. During loading of the computer program, each instruction step, data block and stack declaration is decoded, and the present invention creates and inserts a jump instruction into the original program code to bypass any defective memory cells without interrupting the intended operation of the instruction steps that are loaded into the memory. The loaded program code is then modified to correct any address-referencing that may be changed due to the insertion of the jump instructions. The present invention can even periodically perform a self-test procedure during the normal operation of the computer system so as to locate new defective memory cells and to modify the program code to bypass these newly-located defective memory cells.

Abstract: When loading executable machine code into memories, the defective memory locations can be bypassed by properly inserting jump instructions or dummy memory allocation instructions in the program code. Prior to loading the executable code into the memories, defective memory locations are checked and recorded first. The source program code are analyzed to see which instruction step will fall into defective memory locations. Dummy memory space allocation instructions or additional jump instructions, are inserted in the original micro code, such that defective memory locations can be bypassed when the modified program code is loaded into the working memory space. The present invention is useful for loading executable programs in programmable and verifiable memories, such as Flash/EEPROM, EPROM, SRAM and DRAM, etc.

Abstract: A pin-assignment method is provided for use on an IC package to arrange pin connections. The pin-assignment method can allow an improvement in the electro-static discharge (ESD) protection capability for the IC chip packed in the IC package. Specifically, the pin-assignment method organizes the no-connect pins of the IC package into groups and then assigns each of the two pins that bound each no-connect pin group to be connected to a power bus of the IC chip. This allows for an increased ESD protective capability for the no-connect pins. Moreover, the pin-assignment method can simplify the wiring complexity of the IC package.

Abstract: A transient voltage pump is provided to generate a negative voltage pulse for triggering turn-on of an ESD protection device. As VDD-to-VSS voltage increases rapidly in the initial ESD event, the voltage across the ESD protection device is larger than the trigger voltage of the ESD device while the ESD voltage is still at substantially lower voltage. These negative voltage pulses are used to earlier trigger the NMOS transistor before the ESD transient voltage actually reaches the trigger voltage. The present invention improves the ESD performance of an ESD protection device, such as a MOSFET or bipolar transistor, which is provided for protecting the power bus or IC pins during an ESD event.

Abstract: An integrated semiconductor device includes a substrate having a buried shallow trench isolation structure and an epitaxial layer disposed over the substrate and the buried shallow trench isolation structure. The epitaxial layer includes a shallow trench isolation structure that extends over the buried shallow trench isolation structure in the substrate to substantially reduce leakage current in the substrate to prevent device latch-up.

Abstract: A transient voltage pump is provided to generate a high voltage pulse for triggering turn-on of an ESD protection device. As VDD-to-VSS voltage increases rapidly in the initial ESD event, the voltages of the high voltage pulses are larger than the trigger voltage of the ESD device while the ESD voltage is still at substantially lower voltage. These high voltage pulses are used to early trigger the NMOS transistor before the ESD transient voltage actually reaches the trigger voltage. The present invention improves the ESD performance of an ESD protection device, such as a MOSFET or bipolar transistor, which is provided for protecting the power bus or IC pins during an ESD event.

Abstract: An ESD protective device for protection of an integrated circuit (IC) package from electrostatic discharge damage. The ESD protective device protects the internal circuit of the IC connected to wired pins of the IC package against ESD damage due to ESD stress in neighboring no-connect pins. The ESD protective device includes an ESD protective unit coupled to the power bus and a bonding pad coupled between this ESD protective device and the no-connect pin. The ESD protective unit causes ESD stress applied to the no-connect pin to be diverted to the power bus, thus preventing ESD transfer between a no-connect pin and an active pin, which could damage the internal circuit.

Abstract: A MOSFET structure uses angled poly-gate segments positioned between drain and source diffusion regions such that the entire continuous gate element structure is within the active region in a substrate. The gate-to-source diffusion edges are continuous along the gate body, so as to cascade the snap-back action to enhance uniform turn on of the entire gate element during an ESD event. The angled gate segments provide a total gate-to-area ratio greater than that of a multi-finger-gate configuration within an equal size active region. In addition, the gate signal RC delay is sufficient to provide noise suppression of the output voltage when the MOSFET is used as a high current-drive CMOS output buffer.

Abstract: An electrostatic discharge (ESD) protection structure for an integrated circuit constructed on a semiconductor substrate of a first type (P) comprises a semiconductor controlled rectifier (SCR) formed on the substrate and coupled to the integrated circuit and a transient voltage oscillation circuit, the SCR including a first region of a second type (nwell) formed within the semiconductor substrate and a second region of the first type (P) positioned within the first region, the transient voltage oscillation circuit being coupled to the first region and is adapted to forward-bias a junction between the second region and the first region (P+/nwell junction) at least once during an ESD transient period for earlier triggering the SCR during the ESD event, thereby improving the ESD performance of the SCR ESD protection circuit used for protecting a power bus of the integrated circuit or an IC pin connected to the integrated circuit during an ESD event.

Abstract: A dual-node capacitor coupling technique is used to lower the trigger voltage and to improve the uniform turn-on of a multi-finger MOSFET transistor. Preferably, each MOSFET is an NMOS device. Specifically, each NMOS device includes a capacitor that is connected between the gate of the NMOS device and the pad terminal. A first resistor is connected between the gate and the p-well, while a second resistor is connected between the p-well and the grounded source. For a positive ESD pulse to VSS, the p-well is pulled up to approximately 0.7 V during the initial ESD event, such that the source junction is forward biased and that the trigger voltage of the NMOS device is lowered. At the same time, the gate voltage is coupled within the range of approximately 1 to 2 V to promote the uniform turn on of the gate fingers of the NMOS devices during the initial ESD event.

Abstract: A multi-gate-finger MOSFET structure positions the gate element over a channel between drain and source diffusion regions, such that the entire structure is within the active region in a substrate. The gate/channel-to-drain and gate/channel-to-source diffusion edges are continuous along the gate/channel layout, so as to cascade the snap-back action to enhance uniform turn on of the entire gate element during an ESD event. In addition, the gate signal RC delay is sufficient to provide noise suppression of the output voltage when the MOSFET is used as a high current-drive CMOS output buffer.

Abstract: An apparatus and method for use in a semiconductor memory device to reduce internal circuit damage resulting from the effects of electro-static discharge (ESD) on a bitline pull-up or other type of circuit. Each of a plurality of bitlines in the memory device are coupled to a source terminal of a corresponding N-type MOSFET. Each source terminal is formed in a separate corner portion of at least one active region of the memory device, and is coupled to a given bitline via a bitline contact arranged in the corner portion. Each drain terminal of the N-type MOSFETS is formed from another portion of the active region and is coupled to a VDD supply of the memory device via a VDD contact. A gate terminal of a given MOSFET is formed from a polysilicon gate region overlying a channel in the active region. The gate region has an approximately 90.degree.

Abstract: An ESD protective device for protection of an integrated circuit (IC) package from electrostatic discharge damage. The ESD protective device protects the internal circuit of the IC connected to wired pins of the IC package against ESD damage due to ESD stress in neighboring no-connect pins. The ESD protective device includes an ESD protective unit coupled to the power bus and a bonding pad coupled between this ESD protective device and the no-connect pin. The ESD protective unit causes ESD stress applied to the no-connect pin to be diverted to the power bus, thus preventing ESD transfer between a no-connect pin and an active pin, which could damage the internal circuit.

Abstract: A transient switching circuit is provided to generate a voltage signal with fast voltage switching phenomenon during the initial ESD transient. The voltage signal is applied to a current spike generator for generating a current spike which forward bias an n+/pwell diode for injecting minority carriers into a substrate on which ESD protection device is embodied. The injected minority carriers are used to trigger turn-on of the ESD protection device. These minority carriers flow toward the drain-substrate junction of the NMOS transistor such that the NMOS transistor is triggered at a trigger voltage lower than that provided by the prior arts. The present invention improves the ESD performance of an ESD protection device, such as a MOSFET or bipolar transistor, which is provided for protecting the power bus or IC pins during an ESD event.

Abstract: A transient oscillating circuit is provided to generate a series of current pulses for triggering turn-on of an ESD protection device. As VDD-to-VSS voltage increases rapidly in the initial ESD event, the series of current pulses injects minority carriers into the pwell of an NMOS transistor via an adjacent n+/pwell diode. These minority carriers flow toward the drain-substrate junction of the NMOS transistor such that the NMOS transistor is triggered at a trigger voltage lower than that provided by the prior arts. The present invention improves the ESD performance of an ESD protection device, such as a MOSFET or bipolar transistor, which is provided for protecting the power bus or IC pins during an ESD event.

Abstract: In accordance with the invention, an integrated circuit has a first ESD protection circuit for each input pin which is not adjacent a non-wired IC pin and a second ESD protection circuit for each input pin which is adjacent a non-wired pin. The second ESD protection circuit has a greater ESD protection capability than the first ESD protection circuit. The second ESD protection circuit has a capability of protecting an input pin when an ESD stress occurs at an adjacent non-wired pin. The second ESD protection circuit includes, for example, additional ESD protection elements in comparison to the first ESD protection circuit. Alternatively, the second ESD protection circuit has one ESD protection element which is larger in size or is otherwise different than a corresponding ESD protection element in the first ESD protection circuit.

Abstract: A bit-line pull-up circuit for an SRAM device which utilizes an improved diffusion structure for enhanced immunity of the SRAM device against electrostatic discharge. The improved diffusion structure includes an undivided diffusion region that serves as a common drain for a plurality of MOS transistors. The undivided diffusion region has at least a pair of recessed diffusion edges formed on opposite sides thereof. The forming of the recessed diffusion edges prevents the so-called electrical field crowding effect and also enhances ESD immunity for the MOS transistor. Further, since the drain diffusion region is an undivided area, an increased number of metal contact windows are provided therein, and at least one of the metal contact windows is arranged substantially between the two recessed diffusion edges. In the event of an electrostatic discharge, this allows the discharge current flowing into the drain to be divided into a greater number of small-magnitude currents flowing to the source.

Abstract: A MOS transistor array structure for an electro-static discharge protection circuit in a semiconductor integrated circuit device, having dispersed parallel discharge paths. The MOS transistor array includes an n-well formed in a silicon substrate of the fabricated semiconductor device. A first dispersed drain region is formed in the n-well, and a source region is formed in the silicon substrate. A second dispersed drain region is formed in both the silicon substrate and the n-well. A gate of the transistor array is formed on the silicon substrate, and a first field oxide region is distributed at least partially in the dispersed drain region, so as to improve the even distribution of electric current in the event of an electro-static discharge. The transistor structure is compatible with a silicided process of device fabrication for fast device operation. Fabrication of the structure does not require additional procedural steps for achieving this compatibility.

Abstract: A MOSFET structure for an ESD protection circuit in a semiconductor IC device having segmented diffusion regions. The transistor includes a gate having an extended strip-shaped structure formed on the substrate of the IC device. A well region is formed in the substrate on a first side of the gate structure. A first drain diffusion region is formed in the well region, and a second drain diffusion region is formed partially inside the well region. A source diffusion region is formed in the substrate along a second side of the gate structure, opposing the first side. A field oxide layer is formed over the surface of the substrate, the field oxide layer comprises a number of finger-shaped extensions originating from the drain side of the transistor and extending into the source side of the transistor. The finger-shaped extensions divide the second drain diffusion region into a number of parallel-aligned segmented diffusion regions.

Abstract: A MOS transistor structure for an electro-static discharge (ESD) protection circuit of an integrated circuit device. The ESD protection transistor has a structure that comprises a drain diffusion region formed in the silicon substrate of the integrated circuit device, a source diffusion region formed in the silicon substrate, a gate formed in the silicon substrate, and a number of isolated islands evenly distributed throughout the drain diffusion region. The isolated islands provide substantially uniform diffusion resistance between the drain contacts and the gate while increasing the diffusion resistance of the drain region to a level suitable for ESD current protection. The disclosed MOS transistor structure may be fabricated by a salicide technology-based fabrication procedure that is completely compatible with the salicide technology used for the making of the circuitry for the IC device.