Abstract: An energy storage apparatus includes an energy storage device and a management unit. The management unit: lowers an SOC of the energy storage device by discharge of the energy storage device; acquires current and voltage of the energy storage device while the SOC of the energy storage device is within a predetermined SOC range in a process of raising the SOC of the energy storage device by charge of the energy storage device; and calculates an internal resistance of the energy storage device based on the acquired current and voltage. The SOC range is a range in which a change in voltage of the energy storage device with respect to a change in SOC of the energy storage device is larger than a range in which a value of the SOC is larger than the SOC range.

Abstract: Provided is a radiation detection device, comprising: a radiation detection unit consisting of two or more radiation detection elements each constituted by a pair of electrodes consisting of a first electrode and a second electrode and a radiation absorption layer that is sandwiched between the pair of electrodes, the two or more radiation detection elements being arranged in a surface direction of the radiation absorption layer; and one or more power supply units electrically connected to the first electrode, wherein the radiation detection unit comprises two or more of the first electrodes to which mutually different voltages are applied.

Abstract: A protection circuit 60 is provided with: switches 61, 62 positioned on a power line PL of an electricity storage element 22 and a load 12; first protection elements 63, 64, 65 connected in parallel with the switches 61, 62 and absorbing surge caused when the switches 61, 62 open and cut off discharge current; and a second protection element 66 connected in parallel with the load and flowing, back to the load, the surge caused when the switches 61, 62 open and cut off the discharge current.

Abstract: Provided is a semiconductor nanoparticle-containing composition capable of forming a wavelength conversion layer that efficiently converts the wavelength of excitation light and exhibits sufficient luminescence intensity. An aspect of the semiconductor nanoparticle-containing composition of the present invention contains semiconductor nanoparticles (A) and a coloring matter (B) and further contains a polymerizable compound (C), in which the semiconductor nanoparticles (A) have a maximum emission wavelength in the range of 500 to 670 nm over a wavelength range of 300 to 780 nm, and the coloring matter (B) contains at least one selected from coloring matters (B1) to (B5) having specific structures.

Abstract: To provide an organic photoelectronic element excellent in light emitting characteristics and long-term reliability. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, a hole transport layer disposed between the light emitting layer and the anode, and an electron blocking layer provided in contact with the light emitting layer and the hole transport layer between the light emitting layer and the hole transport layer, wherein the hole transport layer contains a fluorinated polymer and an organic semiconductor material, and has a refractive index in the wavelength range of from 450 nm to 800 nm, of at most 1.

Abstract: A near infrared absorbing dye includes a croconium-based compound shown in formula (AI). In formula (AI), ring Z is either an optionally substituted 6-membered ring including no heteroatom or an optionally substituted 5-membered ring including 0 to 3 heteroatoms in the ring, R1 and R2, R2 and R3, and R1 and a carbon atom or heteroatom as a part of ring Z may be linked to each other to respectively form a heteroring A, a heteroring B, and a heteroring C together with a nitrogen atom.

Abstract: A semiconductor device of an embodiment includes: a first oxide semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode; a gate insulating layer provided between the third region and the gate electrode; a first electrode electrically connected to the first region; a second electrode electrically connected to the second region; and a second oxide semiconductor layer provided in at least one of a position between the first region and the first electrode and a position between the second region and the second electrode and containing indium (In), aluminum (Al), and zinc (Zn), an atomic ratio of aluminum to a sum of indium, aluminum, and zinc being 8% or more and 23% or less, and an atomic ratio of indium to the sum of indium, aluminum, and zinc being 45% or less.

Abstract: To provide an organic photoelectronic element, of which the external quantum efficiency is improved, the power consumption is low and the service life is prolonged. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, and a hole transport layer provided in contact with the light emitting layer between the light emitting layer and the anode, wherein the hole transport layer contains an organic semiconductor material and a fluorinated polymer, and at the surface of the hole transport layer in contact with the light emitting layer, the fluorinated polymer is present.

Abstract: A protective circuit for an energy storage device includes: a cutoff switch that cuts off a current of the energy storage device; a drive circuit that drives the cutoff switch; a power source switch provided on a power source line of the drive circuit; and a control unit, in which the control unit switches a control terminal of the cutoff switch from a high potential to a low potential, and then turns off the power source switch.

Abstract: A semiconductor device of an embodiment includes: a first oxide semiconductor layer including a first region, a second region, and a third region between the first region and the second region; a gate electrode; a gate insulating layer provided between the third region and the gate electrode; a first electrode electrically connected to the first region; a second electrode electrically connected to the second region; and a second oxide semiconductor layer provided in at least one of a position between the first region and the first electrode and a position between the second region and the second electrode and containing indium (In), aluminum (Al), and zinc (Zn), an atomic ratio of aluminum to a sum of indium, aluminum, and zinc being 8% or more and 23% or less, and an atomic ratio of indium to the sum of indium, aluminum, and zinc being 45% or less.

Abstract: A near-infrared absorbing dye includes a compound represented by formula (A). Each of R11 to R14 is independently a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl, aryl or alaryl group. Each of pairs R11 and R12, R12 and R13, and R13 and R14 may combine with one another to form a monocyclic ring or a polycyclic ring in which from 2 to 4 rings are fused. Each of R15 and R16 is independently an alkyl or alaryl group. R15 and R16 may combine with one another to form a cyclohetero ring having from 5 to 10 members together with the nitrogen atom.

Abstract: To provide a charge injection layer in which the refractive index is sufficiently low and unbalance in the composition of materials is less likely to occur, and a method for its production as well as an organic photoelectronic element and a method for its production. The charge injection layer contains a fluorinated polymer and a semiconductor material, and has a refractive index in the wavelength range of from 450 to 800 nm, of at most 1.60.

Abstract: According to an embodiment, a semiconductor device includes an oxide semiconductor layer including indium (In), aluminum (Al), and zinc (Zn), the oxide semiconductor layer having an atomic ratio of the aluminum to a sum of indium, aluminum, and zinc of equal to or more than 8% and equal to or less than 23%, a gate electrode, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode.

Abstract: To provide a charge injection layer in which the refractive index is sufficiently low and unbalance in the composition of materials is less likely to occur, and a method for its production as well as an organic photoelectronic element and a method for its production. The charge injection layer contains a fluorinated polymer and a semiconductor material, and has a refractive index in the wavelength range of from 450 to 800 nm, of at most 1.60.

Abstract: To provide an organic photoelectronic element, of which the external quantum efficiency is improved, the power consumption is low and the service life is prolonged. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, and a hole transport layer provided in contact with the light emitting layer between the light emitting layer and the anode, wherein the hole transport layer contains an organic semiconductor material and a fluorinated polymer, and at the surface of the hole transport layer in contact with the light emitting layer, the fluorinated polymer is present.

Abstract: To provide an organic photoelectronic element excellent in light emitting characteristics and long-term reliability. The organic photoelectronic element comprises a substrate, an anode provided on the substrate, a cathode facing the anode, a light emitting layer disposed between the anode and the cathode, a hole transport layer disposed between the light emitting layer and the anode, and an electron blocking layer provided in contact with the light emitting layer and the hole transport layer between the light emitting layer and the hole transport layer, wherein the hole transport layer contains a fluorinated polymer and an organic semiconductor material, and has a refractive index in the wavelength range of from 450 nm to 800 nm, of at most 1.

Abstract: A near infrared absorbing dye includes a croconium-based compound shown in formula (AI). In formula (AI), ring Z is either an optionally substituted 6-membered ring including no heteroatom or an optionally substituted 5-membered ring including 0 to 3 heteroatoms in the ring, R1 and R2, R2 and R3, and R1 and a carbon atom or heteroatom as a part of ring Z may be linked to each other to respectively form a heteroring A, a heteroring B, and a heteroring C together with a nitrogen atom.

Abstract: To provide a charge transport layer excellent in the external quantum efficiency, and an organic photoelectronic element comprising the charge transport layer. A charge transport layer comprising a film containing a fluorinated polymer and a semiconductor material, wherein the film has a material composition such that ?Eth is within a range of from 0.010 to 0.080 MV/cm. An organic photoelectronic element comprising the charge transport layer.

Abstract: To provide a charge transport layer excellent in the external quantum efficiency, and an organic photoelectronic element comprising the charge transport layer. A charge transport layer comprising a film containing a fluorinated polymer and a semiconductor material, wherein the film has a material composition such that ?Eth is within a range of from 0.010 to 0.080 MV/cm. An organic photoelectronic element comprising the charge transport layer.

Abstract: A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1):