Patents by Inventor Shigeki Hattori
Shigeki Hattori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150048438Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: October 16, 2014Publication date: February 19, 2015Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masaya TERAI, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada
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Publication number: 20150044835Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: ApplicationFiled: September 25, 2014Publication date: February 12, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20150035045Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: October 20, 2014Publication date: February 5, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Misako MOROTA, Hideyuki NISHIZAWA, Masaya TERAI, Shigeki HATTORI, Koji ASAKAWA
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Patent number: 8896052Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: GrantFiled: December 26, 2012Date of Patent: November 25, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Patent number: 8890234Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.Type: GrantFiled: December 20, 2012Date of Patent: November 18, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Masaya Terai, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada
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Publication number: 20140231898Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: July 3, 2013Publication date: August 21, 2014Inventors: Shigeki HATTORI, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Publication number: 20140231897Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer.Type: ApplicationFiled: June 28, 2013Publication date: August 21, 2014Inventors: Masaya TERAI, Shigeki Hattori, Takatoshi Watanabe, Masakazu Yamagiwa, Wangying Lin, Koji Asakawa
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Patent number: 8808973Abstract: According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.Type: GrantFiled: February 22, 2012Date of Patent: August 19, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Satoshi Mikoshiba, Koji Asakawa, Hiroko Nakamura, Shigeki Hattori, Atsushi Hieno, Tsukasa Azuma, Yuriko Seino, Masahiro Kanno
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Publication number: 20140097485Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: ApplicationFiled: December 13, 2013Publication date: April 10, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki HATTORI, Reika ICHIHARA, Masaya TERAI, Hideyuki NISHIZAWA, Tsukasa TADA, Koji ASAKAWA, Hiroyuki FUKE, Satoshi MIKOSHIBA, Yoshiaki FUKUZUMI, Hideaki AOCHI
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Publication number: 20140061763Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: December 26, 2012Publication date: March 6, 2014Inventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Publication number: 20140061762Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: December 20, 2012Publication date: March 6, 2014Inventors: Masaya Terai, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa, Tsukasa Tada
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Patent number: 8636914Abstract: According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.Type: GrantFiled: March 27, 2012Date of Patent: January 28, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Hiroko Nakamura, Satoshi Tanaka, Satoshi Mikoshiba, Atsushi Hieno, Shigeki Hattori
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Patent number: 8633526Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: GrantFiled: September 16, 2011Date of Patent: January 21, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20140008601Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: ApplicationFiled: September 10, 2013Publication date: January 9, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Hideyuki NISHIZAWA, Shigeki HATTORI, Masaya TERAI, Satoshi MIKOSHIBA, Koji ASAKAWA, Tsukasa TADA
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Patent number: 8575587Abstract: A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings.Type: GrantFiled: September 20, 2011Date of Patent: November 5, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Koji Asakawa, Shigeki Hattori, Hideyuki Nishizawa, Satoshi Mikoshiba, Reika Ichihara, Masaya Terai
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Publication number: 20130248962Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; an organic molecular layer formed on the semiconductor layer, the organic molecular layer including a plurality of organic molecules, each of the organic molecules includes a tunnel insulating unit of alkyl chain having one end bonded to the semiconductor layer, a charge storing unit, and a bonding unit configured to bond the other end of the alkyl chain to the charge storing unit; a block insulating film formed on the organic molecular layer; and a gate electrode formed on the block insulating film.Type: ApplicationFiled: September 4, 2012Publication date: September 26, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Misako Morota, Hideyuki Nishizawa, Shigeki Hattori, Masaya Terai, Koji Asakawa
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Publication number: 20130242670Abstract: A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.Type: ApplicationFiled: August 31, 2012Publication date: September 19, 2013Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shigeki Hattori, Masakazu Yamagiwa, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Publication number: 20130183828Abstract: According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.Type: ApplicationFiled: September 20, 2012Publication date: July 18, 2013Inventors: Hiroko NAKAMURA, Satoshi Mikoshiba, Atsushi Hieno, Shigeki Hattori
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Patent number: 8481246Abstract: According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an ?-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.Type: GrantFiled: March 26, 2012Date of Patent: July 9, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Koji Asakawa, Shigeki Hattori, Ryota Kitagawa
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Patent number: D688411Type: GrantFiled: January 27, 2012Date of Patent: August 20, 2013Assignee: Kyosemi CorporationInventors: Masahiko Inoue, Takashi Matsui, Shigeki Hattori, Josuke Nakata, Hidetoshi Nakamura, Toshinori Matsumoto, Norifumi Nagatomo