Patents by Inventor Shigeki Hattori
Shigeki Hattori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170271603Abstract: A semiconductor memory device of an embodiment includes a semiconductor layer, a gate electrode, and a charge storing layer provided between the semiconductor layer and the gate electrode. The charge storing layer includes polyoxometalates that contain copper (Cu) and tungsten (W).Type: ApplicationFiled: December 14, 2016Publication date: September 21, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki HATTORI, Masaya TERAI, Hideyuki NISHIZAWA, Koji ASAKAWA
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Patent number: 9685321Abstract: A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.Type: GrantFiled: March 9, 2016Date of Patent: June 20, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Masaya Terai, Shigeki Hattori, Hideyuki Nishizawa, Koji Asakawa
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Patent number: 9548373Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).Type: GrantFiled: September 1, 2015Date of Patent: January 17, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Shigeki Hattori, Tsukasa Tada, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Patent number: 9543536Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugate chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.Type: GrantFiled: January 5, 2016Date of Patent: January 10, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Yusuke Tanaka, Hideyuki Nishizawa, Shigeki Hattori, Koji Asakawa
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Patent number: 9536898Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: GrantFiled: April 28, 2016Date of Patent: January 3, 2017Assignee: Kabushiki Kaisha ToshibaInventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Patent number: 9515195Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.Type: GrantFiled: May 4, 2015Date of Patent: December 6, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Shigeki Hattori, Masaya Terai, Satoshi Mikoshiba, Koji Asakawa, Tsukasa Tada
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Publication number: 20160284868Abstract: A semiconductor memory device in an embodiment includes a semiconductor layer, a control gate electrode, an organic molecular layer provided between the semiconductor layer and the control gate electrode, and a first insulating layer provided between the organic molecular layer and the semiconductor layer, the first insulating layer having a first layer containing alkyl chains and a second layer containing siloxane, the second layer being provided between the first layer and the organic molecular layer.Type: ApplicationFiled: March 9, 2016Publication date: September 29, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Masaya TERAI, Shigeki HATTORI, Hideyuki NISHIZAWA, Koji ASAKAWA
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Publication number: 20160284869Abstract: A semiconductor memory device according to an embodiment includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode, and the organic molecular layer having an organic molecule that includes a molecular structure described by a molecular formula (1):Type: ApplicationFiled: March 9, 2016Publication date: September 29, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: SHIGEKI HATTORI, MASAYA TERAI, HIDEYUKI NISHIZAWA, KOJI ASAKAWA
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Patent number: 9450065Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.Type: GrantFiled: September 25, 2014Date of Patent: September 20, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shigeki Hattori, Reika Ichihara, Masaya Terai, Hideyuki Nishizawa, Tsukasa Tada, Koji Asakawa, Hiroyuki Fuke, Satoshi Mikoshiba, Yoshiaki Fukuzumi, Hideaki Aochi
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Publication number: 20160240556Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: ApplicationFiled: April 28, 2016Publication date: August 18, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Patent number: 9412943Abstract: An organic molecular memory in an embodiment includes a first conductive layer; a second conductive layer; and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer including an organic molecule having an oligophenylene ethynylene backbone, the oligophenylene ethynylene backbone including three or more benzene rings, and the oligophenylene ethynylene backbone including two fluorine atoms added in ortho positions or meta positions of one of the benzene rings other than benzene rings at both ends.Type: GrantFiled: September 1, 2015Date of Patent: August 9, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Koji Asakawa, Yutaka Majima, Hideyuki Nishizawa, Yusuke Tanaka, Shigeki Hattori
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Patent number: 9378962Abstract: A nonvolatile semiconductor storage device includes a semiconductor layer, a first insulating film formed on the semiconductor layer, a charge storage layer formed on the first insulating film and having fine metal grains, a second insulating film formed on the charge storage layer, and a gate electrode formed on the second insulating film. During a write operation, a differential voltage is applied across the gate electrode and the semiconductor layer to place the gate electrode at a lower voltage than the semiconductor layer and cause a positive electric charge to be stored in the charge storage layer.Type: GrantFiled: August 31, 2012Date of Patent: June 28, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shigeki Hattori, Masakazu Yamagiwa, Masaya Terai, Hideyuki Nishizawa, Koji Asakawa, Yoshiaki Fukuzumi
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Publication number: 20160164015Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugate chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.Type: ApplicationFiled: January 5, 2016Publication date: June 9, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Yusuke Tanaka, Hideyuki Nishizawa, Shigeki Hattori, Koji Asakawa
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Patent number: 9356111Abstract: A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.Type: GrantFiled: October 20, 2014Date of Patent: May 31, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Misako Morota, Hideyuki Nishizawa, Masaya Terai, Shigeki Hattori, Koji Asakawa
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Publication number: 20160087202Abstract: An organic molecular memory in an embodiment includes a first conductive layer; a second conductive layer; and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer including an organic molecule having an oligophenylene ethynylene backbone, the oligophenylene ethynylene backbone including three or more benzene rings, and the oligophenylene ethynylene backbone including two fluorine atoms added in ortho positions or meta positions of one of the benzene rings other than benzene rings at both ends.Type: ApplicationFiled: September 1, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Koji ASAKAWA, Yutaka Majima, Hideyuki Nishizawa, Yusuke Tanaka, Shigeki Hattori
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Publication number: 20160087067Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a control gate electrode; and an organic molecular layer, which is provided between the semiconductor layer and the control gate electrode, and has organic molecules including a molecular structure described by a molecular formula (1).Type: ApplicationFiled: September 1, 2015Publication date: March 24, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Shigeki HATTORI, Tsukasa TADA, Masaya TERAI, Hideyuki NISHIZAWA, Koji ASAKAWA, Yoshiaki FUKUZUMI
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Patent number: 9291908Abstract: According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.Type: GrantFiled: June 1, 2015Date of Patent: March 22, 2016Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Atsushi Hieno, Shigeki Hattori, Hiroko Nakamura, Satoshi Mikoshiba, Koji Asakawa, Masahiro Kanno, Yuriko Seino, Tsukasa Azuma
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Publication number: 20160079387Abstract: Disclosed herein is a nonvolatile semiconductor memory device containing a semiconductor layer, a block insulating layer, an organic molecular layer which is formed between the semiconductor layer and the block insulating layer, and a control gate electrode formed on the block insulating layer. The organic molecular layer contains first organic molecules and second organic molecules, such that the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side.Type: ApplicationFiled: November 20, 2015Publication date: March 17, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Masaya TERAI, Shigeki HATTORI, Takatoshi WATANABE, Masakazu YAMAGIWA, Wangying LIN, Koji ASAKAWA
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Patent number: 9276216Abstract: An organic molecular device of an embodiment includes a first and a second conductive layers and an organic molecular layer having an organic molecule provided between the first and the second conductive layer. The organic molecule includes a one-dimensional or quasi one-dimensional ?-conjugated system chain having either a first aromatic ring or a second aromatic ring. The first aromatic ring has one or more substituents that are an electron withdrawing group, each substituent of the first aromatic ring is independently selected from the group consisting of the electron withdrawing group and hydrogen, the second aromatic ring has one or more substituents that are an electron releasing group, and each substituent of the second aromatic ring is independently selected from the group consisting of the electron releasing group and hydrogen. The first aromatic ring or the second aromatic ring exist in an unbalanced manner in the ?-conjugated system chain.Type: GrantFiled: March 4, 2014Date of Patent: March 1, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Hideyuki Nishizawa, Shigeki Hattori, Yusuke Tanaka, Koji Asakawa
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Patent number: 9263687Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.Type: GrantFiled: August 11, 2014Date of Patent: February 16, 2016Assignee: Kabushiki Kaisha ToshibaInventors: Yusuke Tanaka, Hideyuki Nishizawa, Shigeki Hattori, Koji Asakawa