Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.

Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure.

Abstract: According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.

Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.

Abstract: According to one embodiment, a method of forming a pattern includes forming a monolayer on a substrate, selectively exposing the monolayer to an energy beam and selectively modifying exposed portions thereof to form patterns of exposed and unexposed portions, forming a block copolymer layer includes first and second block chains on the monolayer, and causing the block copolymer layer to be phase-separated to form patterns of the first and second block chains of the block copolymer layer based on the patterns of the exposed and unexposed portions of the monolayer.

Abstract: A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure with oxymetal or chlorometal at the center.

Abstract: According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

Abstract: A nonvolatile semiconductor memory device includes a semiconductor layer, a control gate electrode, and an organic molecular layer provided between the semiconductor layer and the control gate electrode and having an organic molecule including a porphyrin structure.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.

Abstract: According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents.

Abstract: An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including charge-storage molecular chains or variable-resistance molecular chains, the charge-storage molecular chains or the variable-resistance molecular chains including fused polycyclic groups.

Abstract: According to one embodiment, a pattern formation method includes forming a pattern on a layer. The layer has a first surface energy and includes a silicon compound. The pattern has a second surface energy different from the first surface energy. The method includes forming a block polymer on the layer and the pattern. The method includes forming a structure selected from a lamellar structure and a cylindrical structure of the block polymer containing polymers arranged by microphase separation. The lamellar structure is oriented perpendicularly to the layer surface. The cylindrical structure is oriented so as to have an axis parallel to a normal line of the layer surface. The second surface energy is not less than a maximum value of surface energies of the polymers or not more than a minimum value of the surface energies of the polymers.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

Abstract: An organic molecular memory in an embodiment includes a first conducive layer, a second conductive layer, and an organic molecular layer provided between the first conductive layer and the second conductive layer, the organic molecular layer having an organic molecule, the organic molecule having a linker group bonded to the first conductive layer, a ? conjugated chain bonded to the linker group, and a phenyl group bonded to the ? conjugated chain opposite to the linker group and facing the second conductive layer, the ? conjugated chain including electron-accepting groups or electron-donating groups arranged in line asymmetry with respect to a bonding direction of the ? conjugated chain, the phenyl group having substituents R0, R1, R2, R3, and R4 as shown in the following formula, the substituent R0 being an electron-accepting group or an electron-donating group.

Abstract: According to one embodiment, a pattern formation method is provided, the pattern formation includes: laminating a self-assembled monolayer and a polymer film on a substrate; causing chemical bonding between the polymer film and the self-assembled monolayer by irradiation with an energy beam to form a polymer surface layer on the self-assembled monolayer; and forming on the polymer surface layer a polymer alloy having a pattern of phase-separated structures.

Abstract: An organic molecular device of an embodiment includes a first and a second conductive layers and an organic molecular layer having an organic molecule provided between the first and the second conductive layer. The organic molecule includes a one-dimensional or quasi one-dimensional ?-conjugated system chain having either a first aromatic ring or a second aromatic ring. The first aromatic ring has one or more substituents that are an electron withdrawing group, each substituent of the first aromatic ring is independently selected from the group consisting of the electron withdrawing group and hydrogen, the second aromatic ring has one or more substituents that are an electron releasing group, and each substituent of the second aromatic ring is independently selected from the group consisting of the electron releasing group and hydrogen. The first aromatic ring or the second aromatic ring exist in an unbalanced manner in the ?-conjugated system chain.