Abstract: A particle beam treatment apparatus includes: a rotating gantry configured to axially rotate in a state where a bed fixed to a stationary system is disposed inside the rotating gantry and an irradiation port of a beam is fixed to a body of the rotating gantry; a tunnel structure configured to have at least a horizontal floor surface and have an internal space in which at least a part of the bed is accommodated; and a rotation supporter configured to cause the tunnel structure to be stationary in the stationary system independently of axis rotation of the rotating gantry by rotationally displacing the tunnel structure with respect to an inner side surface of the rotating gantry.

Abstract: An assessing device capable of assessing presence or absence of local damage in a structure is provided. The assessing device includes a dominant frequency identifying unit that identifies a dominant frequency of a vibration at each of a plurality of spots in a structure, based on information indicating the vibration at each of the plurality of spots, a phase difference identifying unit that identifies a phase difference at the dominant frequency between the vibrations at the plurality of spots, based on the dominant frequency and information indicating the vibrations; and an assessing unit that assesses damage in the structure, based on the phase difference.

Abstract: A position adjustment device for a flat panel detector comprising: a guide that is provided on a surface side of the flat panel detector and can be measured by an optical device; and a fixing member configured to fix the guide to one of a side of the flat panel detector of a position adjustment unit and a side of a support portion for supporting the flat panel detector, the position adjustment unit being provided between the flat panel detector and the support portion.

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Abstract: Provided are an inspection device and the like capable of correctly determining a state of an inspection target without destroying the inspection target. An inspection device calculates vibration characteristic values representing a character of vibration information indicating vibrations measured by vibration sensors measuring a vibration of an inspection target; calculates a scattering degree indicating a scattering degree of the calculated vibration characteristic values among the vibrations measured by the vibration sensors; and determines a condition of the inspection target based on a magnitude of the calculated scattering degree.

Abstract: A particle beam treatment apparatus includes: a rotating gantry configured to axially rotate in a state where a bed fixed to a stationary system is disposed inside the rotating gantry and an irradiation port of a beam is fixed to a body of the rotating gantry; a tunnel structure configured to have at least a horizontal floor surface and have an internal space in which at least a part of the bed is accommodated; and a rotation supporter configured to cause the tunnel structure to be stationary in the stationary system independently of axis rotation of the rotating gantry by rotationally displacing the tunnel structure with respect to an inner side surface of the rotating gantry.

Abstract: A first time difference calculation unit calculates a time difference ?t1 between the timing of detection of vibration that indicates the first vibration mode of a pipe P and the timing of detection of vibration that indicates a second vibration mode of the pipe P by processing a result of a measurement . A second time difference calculation unit calculates a time difference ?t2 between the timing of detection of vibration that indicates the first vibration mode of the pipe P and the timing of detection of vibration that indicates the second vibration mode of the pipe P by processing a result of another measurement. A leakage position calculation unit uses the time differences ?t1, ?t2, and a space interval I between the first vibration detection unit and the first time difference calculation unit to calculate a leakage position in the pipe P.

Abstract: In a motor, a magnet is configured so that four pairs of S-poles and N-poles are formed at equal angular intervals, and a stator core has six salient poles formed thereon. Of the plurality of salient poles, when the first salient pole or the second salient pole faces a position between an S-pole and an N-pole, the other salient pole faces the center of an S-pole or the center of an N-pole. The radial-direction lengths of the first salient pole and the second salient pole among the plurality of salient poles are longer than the other salient poles, and the radial-direction length of the portion of the first coil wound around the first salient pole and the radial-direction length of the portion of the second coil wound around the second salient pole are longer than the radial-direction lengths of the other salient poles.

Abstract: Degradation of a pipe can be easily detected. A piping inspection system 1 includes an excitation unit 100, a wave detection unit 210, and a diagnosis unit 220. The excitation unit 100 excites waves of different wave modes simultaneously at a first position of a pipe 300. The wave detection unit 210 detects the waves of different wave modes at a second position of the pipe 300. The diagnosis unit 220 diagnoses degradation of the pipe 300 based on a velocity of one of the waves of different wave modes, the velocity being calculated by using a detection time difference between the waves of different wave modes.

Abstract: There is provided a plasma processing apparatus including a microwave introduction part configured to radiate microwaves transmitted by a microwave transmission part inside a process container. The microwave introduction part includes a conductive member constituting a ceiling portion of the process container and having a recess formed to face the mounting surface, a plurality of slots forming a part of the conductive member and configured to radiate the microwaves transmitted via the microwave transmission part, and a microwave transmitting member fitted to the recess of the conductive member and configured to transmit and introduce the microwaves radiated from the plurality of slots into the process container. The microwave transmitting member is provided to be shared with the microwaves transmitted via transmission paths and includes an interference suppressing part configured to suppress interference of the microwaves in the microwave transmitting member.

Abstract: A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract: An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber.

Abstract: A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas into the antenna body; a gas diffusion space configured to diffuse the processing gas in the antenna body; a plurality of gas outlets provided in the antenna body and configured to discharge the processing gas into the chamber; a plurality of slots provided in the antenna body under a state where the slots are separated from the gas diffusion space and the gas outlets; and an annular dielectric member provided in the microwave radiation surface side of the antenna body to cover a slot formation region where the slots are formed. A metal surface wave is formed in the microwave radiation surface by the microwave radiated through the slots and the annular dielectric member and a surface wave plasma is generated by the metal surface wave.

Abstract: A plasma generation antenna and a plasma processing apparatus can supply a gas and an electromagnetic wave effectively. A plasma processing apparatus 10 includes a processing chamber 100 in which a plasma process is performed; a wavelength shortening plate 480 configured to transmit an electromagnetic wave; and a plasma generation antenna 200 having a shower head 210 provided adjacent to the wavelength shortening plate 480. The shower head 210 is made of a conductor, and has a multiple number of gas holes 215 and a multiple number of slots 220 through which the electromagnetic wave passes. The slots 220 are provided at positions isolated from the gas holes 215.

Abstract: The present invention reduces production costs associated with a device that uses results of detection by a plurality of vibration detectors to detect a leakage position in a pipe. A first time difference calculation unit 114 calculates a time difference ?t1 between the timing of detection of vibration that indicates the first vibration mode of a pipe P and the timing of detection of vibration that indicates a second vibration mode of the pipe P by processing a result of a measurement made by a first vibration detection unit 112. A second time difference calculation unit 124 calculates a time difference ?t2 between the timing of detection of vibration that indicates the first vibration mode of the pipe P and the timing of detection of vibration that indicates the second vibration mode of the pipe P by processing a result of a measurement made by a second vibration detection unit 122.

Abstract: A microwave plasma source for forming a surface wave plasma by radiating a microwave into a chamber of a plasma processing apparatus, which includes: a microwave output part for outputting the microwave; a microwave transmission part for transmitting the microwave; and a microwave radiation member for radiating the microwave into the chamber. The microwave transmission part includes a plurality of microwave introduction mechanisms circumferentially arranged in a peripheral portion of the microwave radiation member and configured to introduce the microwave into the microwave radiation member. The microwave radiation member includes a metal main body, a plurality of dielectric slow-wave members arranged in an overall annular shape in the vicinity of an arrangement surface of the main body, an annular dielectric microwave transmission member arranged in a microwave radiation surface of the main body, and a slot antenna part installed between the slow-wave members and the microwave transmission member.

Abstract: In a method for forming a fluorocarbon-based insulating film to be in contact with a metal, a microwave is irradiated to the metal to which moisture is adhered in a hydrogen-containing atmosphere. Then plasma CVD using a fluorocarbon-based gas is performed on the metal to which the microwave is irradiated to form the insulating film.

Abstract: A plasma processing device processes a substrate by generating plasma using a surface wave formed on a surface of a shower plate by a supplied microwave, which includes a plasma generating antenna equipped with the shower plate for supplying first and second gases into a processing vessel, and a drooping member installed to protrude downward from a lower end surface of the shower plate. An outer surface of the drooping member spreads outward as it goes from a top end to a bottom end thereof. The shower plate includes first and second gas supply holes through which the first and second gases are supplied into the processing vessel, respectively. The first gas supply holes are disposed inward of the outer surface of the drooping member. The second gas supply holes are disposed outward of the outer surface of the drooping member.

Abstract: Provided is a method of etching a silicon oxide film, which includes supplying a mixture gas of a halogen element-containing gas and a basicity gas onto a surface of the silicon oxide film; modifying the silicon oxide film to produce a reaction product; and heating the reaction product to remove the reaction product. Modifying the silicon oxide film and heating the reaction product are performed using one chamber. In heating the reaction product, the reaction product is selectively heated by a heating unit.