Abstract: A semiconductor device comprising a substrate is disclosed. The substrate comprises: a well of type one; a first doped region of type two, provided in the well of type one; a well of type two, adjacent to the well of type one; a first doped region of type one, doped in the well of type two; and a second doped region of type two, provided in the well of type one and the well of type two, not touching the first doped region of type two. The substrate comprises no isolating material provided in a current path formed by the first doped region of type two, the well of type one, the well of type two and the first doped region of type one.

Abstract: A maintenance method for network connection and a computer system are provided. The method is adapted to a computer system having a timer. The timer is configured to regularly wake up the computer system to check whether a network connection is working normally. In the method, the computer system is waked up at intervals of a first time interval within a predetermined period and a current IP address of the computer system is extracted. The predetermined period is divided into a plurality of periods by the first time interval. Whether a change occurs on the IP address is determined withing each of the periods, and accordingly the computer system is waked up to check the network connection.

Abstract: An antenna with swappable and selective radiation direction includes a first arm, a second arm electrically connected to the first arm, a third arm is electrically connected to the first arm, a first impedance tuning circuit coupled to the second arm for connecting the second arm to a ground or a first matching component according to a control signal, and a second impedance tuning circuit coupled to the third arm for connecting the third arm to the ground or a second matching component according to the control signal. By tuning impedance of the antenna, the antenna operates in a first mode corresponding to a first radiation direction or a second mode corresponding to a second radiation direction.

Abstract: A pixel circuit is provided comprising the following. The first transistor includes a gate electrode and a semiconductor layer comprising a channel region, a source region, a first drain region, and a second drain region. A first portion of the channel region is connected to the source region, a second portion of the channel region is connected to the first drain region, and a third portion of the channel region is connected to the second drain region. The channel width of the second portion is greater than that of the third portion. A capacitive device is connected to the gate of the first transistor. The second transistor includes a source region connected to the second drain region and a drain region connected to the light-emitting element. The third transistor includes a source region connected to the first drain region and a drain region connected to a capacitive device.

Abstract: An example electronic device may include an antenna module comprising an active element and a ground plane. The electronic device may include a proximity sensor element integrated within the antenna module, wherein the proximity sensor element is to detect proximity of a user.

Abstract: A protective frame of a mask includes: a first frame unit integrally formed as one piece, and including a first protective part for protecting a portion of a face of a user, and a first connecting part integrally connected to the first protective part; and a second frame unit integrally formed as one piece, and including a second protective part for protecting another portion of the face of the user, and a second connecting part integrally connected to the second protective part. The first connecting part is connected to the second connecting part, and the first frame unit and the second frame unit are connected together to constitute the protective frame.

Abstract: A semiconductor device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. The semiconductor device also includes a first doping region formed in a portion of at least one portion of the semiconductor substrate separating the pair of first well regions, and a pair of second doping regions, respectively formed in one of the pair of first well regions, having the first conductivity type. Further, the semiconductor device includes a pair of insulating layers, respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the pair of second doping regions.

Abstract: Examples disclosed herein control radiation exposure for a wireless computing device. In one example, the wireless computing device monitors for instances of upload transmissions from a wireless communications module of the wireless computing device, performs a running average of the instances of upload transmissions over a period of time, and determines whether the running average exceeds a threshold value. If the running average exceeds the threshold value, the wireless computing device adjusts upload transmissions from the wireless communications module to control the radiation exposure for the wireless computing device.

Abstract: A maintenance method for network connection and a computer system are provided. The method is adapted to a computer system having a timer. The timer is configured to regularly wake up the computer system to check whether a network connection is working normally. In the method, the computer system is waked up at intervals of a first time interval within a predetermined period and a current IP address of the computer system is extracted. The predetermined period is divided into a plurality of periods by the first time interval. Whether a change occurs on the IP address is determined within each of the periods, and accordingly the computer system is waked up to check the network connection.

Abstract: The invention provides an electrostatic discharge (ESD) protection device formed by a Schottky diode. An exemplary embodiment of an ESD protection device comprises a semiconductor substrate having an active region. A first well region having a first conductive type is formed in the active region. A first heavily doped region having the first conductive type is formed in the first well region. A first metal contact is disposed on the first doped region. A second metal contact is disposed on the active region, connecting to the first well region without through any heavily doped region being located therebetween, wherein the first metal contact and the second metal contact are separated by a polysilicon pattern disposed on the first well region.

Abstract: The present invention provides a differential sensing circuit with a dynamic voltage reference for a single-ended bit line memory is disclosed. The exemplary differential sensing circuit comprises: a dynamic voltage reference generating unit and a differential sensing amplifying unit. The dynamic voltage reference generating unit is coupled to an input voltage, and utilized for receiving a setting signal to generate the dynamic voltage reference. The differential sensing amplifying unit is coupled to the single-ended bit line memory and the dynamic voltage reference generating unit, and utilized for receiving at least an input signal from the single-ended bit line memory and the dynamic voltage reference from the dynamic voltage reference generating unit, so as to generate at least an output signal accordingly.

Abstract: An ESD protecting circuit comprising: a first and a second voltage pad; an I/O pad; a first ESD protecting module, comprising a first terminal coupled to the first voltage pad, and comprising a second terminal; a switch, comprising a first terminal coupled to the second terminal of the first ESD protecting module, comprising a second terminal coupled to the I/O pad, and comprising a control terminal for receiving a control signal; a second ESD protecting module, comprising a first terminal coupled to the first terminal of the MOS transistor, and comprising a second terminal coupled to the second voltage pad; and an ESD detecting circuit, for detecting if an ESD voltage exists, for generating the control signal to control the MOS transistor to be conductive when an ESD voltage is detected and to control the MOS transistor to be nonconductive when the ESD voltage is not detected.

Abstract: An electrostatic discharge (ESD) protection device includes a semiconductor substrate and a pair of first well regions formed in the semiconductor substrate, wherein the pair of first well regions have a first conductivity type and are separated by at least one portion of the semiconductor substrate. In addition, the ESD protection device further includes a first doping region formed in a portion of the at least one portion of the semiconductor substrate separating the pair of first well regions, having a second conductivity type opposite to the first conductivity type. Moreover, the ESD protection device further includes a pair of second doping regions respectively formed in one of the first well regions, having the first conductivity type, and a pair of insulating layers respectively formed over a portion of the semiconductor substrate to cover a portion of the first doped region and one of the second doping regions.

Abstract: The present invention provides a differential sensing circuit with a dynamic voltage reference for a single-ended bit line memory is disclosed. The exemplary differential sensing circuit comprises: a dynamic voltage reference generating unit and a differential sensing amplifying unit. The dynamic voltage reference generating unit is coupled to an input voltage, and utilized for receiving a setting signal to generate the dynamic voltage reference. The differential sensing amplifying unit is coupled to the single-ended bit line memory and the dynamic voltage reference generating unit, and utilized for receiving at least an input signal from the single-ended bit line memory and the dynamic voltage reference from the dynamic voltage reference generating unit, so as to generate at least an output signal accordingly.

Abstract: A sense amplifier circuit includes a single-ended sense amplifier and an isolation switch. The isolation switch is coupled between a bias node and a first line of a memory device, receives an output of the single-ended sense amplifier and selectively isolates the bias node and the first line in response to the output of the single-ended sense amplifier. The first line is coupled to a plurality of memory cells of the memory device.

Abstract: A pixel circuit is provided comprising the following. The first transistor includes a gate electrode and a semiconductor layer comprising a channel region, a source region, a first drain region, and a second drain region. A first portion of the channel region is connected to the source region, a second portion of the channel region is connected to the first drain region, and a third portion of the channel region is connected to the second drain region. The channel width of the second portion is greater than that of the third portion. A capacitive device is connected to the gate of the first transistor. The second transistor includes a source region connected to the second drain region and a drain region connected to the light-emitting element. The third transistor includes a source region connected to the first drain region and a drain region connected to a capacitive device.

Abstract: A display method is provided, including: providing a screen, wherein the screen has a first display region and a second display region; detecting a position of a user relative to the screen, wherein a first distance is formed between the user and the first display region, and a second distance is formed between the user and the second display region; when the first distance is substantially the same as the second distance, the first display region displays a first image, and the second display region displays a second image; and when the second distance exceeds the first distance, the first display region displays the first image, and the second display region displays a third image, wherein the third image is the second image enlarged.

Abstract: A multi-link rotation structure is provided, including: a base; two arm assemblies, each of the two arm assemblies including a pivot portion pivoted to the base and at least two arms connected with the pivot portion and extending away from each other, the pivot portions of the two arm assemblies being non-coaxial; at least two unidirectional rotation devices, respectively axially pivoted to the at least two arms of one of the two arm assemblies, rotatable in a same direction; at least two linkage assemblies, each of the at least two linkage assemblies pivoted to the at least two arms of the other of the two arm assemblies and pivoted to one of the at least two unidirectional rotation devices.

Abstract: A piezoelectric ceramic speaker includes a conductive plate and a round piezoelectric ceramic sheet. The conductive plate has notches and sound delivering holes. The round piezoelectric ceramic plate is stacked on a central region of the conductive plate. The notches are opened on a periphery region of the conductive plate and partly extended toward the central region. The notches are equiangularly arranged on the conductive plate with respect to the center of the conductive plate. Accordingly, auxiliary fixtures can pass through the notches to position the conductive plate. Hence, the conductive plate can be positioned by the fixtures during manufacturing processes. Consequently, the piezoelectric ceramic speaker can be mass produced with good yield rates. Additionally, since the round piezoelectric ceramic plate and the conductive plate are coaxially arranged, a dual-band earphone having the piezoelectric ceramic speaker can provide a better sound resolution performance.

Abstract: The earphone with inverse sound waves includes an earphone housing, a high frequency driver, and a low frequency driver. The earphone housing includes an inner space, a sound output portion, and a reflecting portion. The reflecting portion receives a passive diaphragm. The high frequency driver produces high frequency sound waves and has a sound output direction toward the sound output opening. The low frequency driver is mounted in the inner space of the earphone housing by a mounting brace. The low frequency driver is located between the high frequency driver and the passive diaphragm. A sound transmitting portion is formed between the mounting brace and the earphone housing. The low frequency driver produces low frequency sound waves and has a sound output direction toward the passive diaphragm. The passive diaphragm reflects the low frequency sound waves to the sound output opening via the sound transmitting portion.