Abstract: Semiconductor devices and methods of forming the same. The method includes providing a semiconductor substrate having a channel layer over the substrate. A capping layer including silicon and having a first thickness is formed over the channel layer. The capping layer is partially oxidized to form an oxidized portion of the capping layer. The oxidized portion of the capping layer is removed to form a thinned capping layer having a second thickness less than the first thickness.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductor substrate; and a gate stack disposed on the semiconductor substrate. The gate stack includes a high k dielectric material layer, a capping layer disposed on the high k dielectric material layer, and a metal layer disposed on the capping layer. The capping layer and the high k dielectric material layer have a footing structure.

Abstract: A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.

Abstract: A method of manufacturing dual work function devices starting from a single metal electrode and the device resulting therefrom are disclosed. In one aspect, the method includes a single-metal-single-dielectric (SMSD) CMOS integration scheme. A single dielectric stack comprising a gate dielectric layer and a dielectric capping layer and one metal layer overlying the dielectric stack are first deposited, forming a metal-dielectric interface. Upon forming the dielectric stack and the metal layer, at least part of the dielectric capping layer is selectively modified by adding work function tuning elements, the part being adjacent to the metal-dielectric interface.

Abstract: A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.

Abstract: The present disclosure relates to methods for forming a gate stack in a MOSFET device and to MOSFET devices obtainable through such methods. In exemplary methods described herein, a rare-earth-containing layer is deposited on a layer of a silicon-containing dielectric material. Before these layers are annealed, a gate electrode material is deposited on the rare-earth-containing layer. Annealing is performed after the deposition of the gate electrode material, such that a rare earth silicate layer is formed.

Abstract: A gas supply piping system suitable for transporting a gas to a machine terminal from a gas supply terminal is provided, which includes a main supply pipe, a plurality of branch supply pipes, a plurality of purifiers, a plurality of first valves and a backup piping. The main supply pipe is connected to the gas supply terminal. The branch supply pipes are connected the main supply pipe and the machine terminal respectively. The purifiers are connected to the branch supply pipes respectively. The first valves are connected to the branch supply pipes respectively and located between the purifiers and the gas supply terminal. The backup piping is connected to the branch supply pipes and disposed between the purifiers and the machine terminal.