Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

Abstract: A fabrication method of a semiconductor package includes the steps of: forming a release layer on a carrier having concave portions; disposing chips on the release layer in the concave portions of the carrier; forming an encapsulant on the chips and the release layer; forming a bonding layer on the encapsulant; removing the release layer and the carrier so as to expose the active surfaces of the chips; and forming a circuit structure on the encapsulant and the chips. Since the release layer is only slightly adhesive to the chips and the encapsulant, the present invention avoids warpage of the overall structure during a thermal cycle caused by incompatible CTEs.

Abstract: The present invention provides a semiconductor package and a method of fabricating the same, including: placing in a groove of a carrier a semiconductor element having opposing active and non-active surfaces, and side surfaces abutting the active surface and the non-active surface; applying an adhesive material in the groove and around a periphery of the side surfaces of the semiconductor element; forming a dielectric layer on the adhesive material and the active surface of the semiconductor element; forming on the dielectric layer a circuit layer electrically connected to the semiconductor element; and removing a first portion of the carrier below the groove to keep a second portion of the carrier on a side wall of the groove intact for the second portion to function as a supporting member. The present invention does not require formation of a silicon interposer, and therefore the overall cost of a final product is much reduced.

Abstract: A semiconductor package and a method for fabricating the semiconductor package are provided. The semiconductor package includes a base layer, a plurality of conductive pillars, a semiconductor element, and an encapsulation. The base layer has opposing first and second surfaces and a receiving part. The conductive pillars are formed on the second surface. Each of the conductive pillars has first and second terminals, and the second terminal is distant from the second surface of the base layer. The semiconductor element is received in the receiving part, and has opposing active and passive surfaces, and the active surface is exposed from the first surface. The encapsulation is formed on the second surface, encapsulates the conductive pillars and the semiconductor element, and has opposing third and fourth surfaces, and the second terminals of the conductive pillars are exposed from the fourth surface. The semiconductor package is provided with the conductive pillars having fine pitches.

Abstract: A semiconductor package is provided, including a semiconductor substrate having a plurality of conductive vias, a buffer layer formed on the semiconductor substrate, a plurality of conductive pads formed on end surfaces of the conductive vias and covering the buffer layer. During a reflow process, the buffer layer greatly reduces the thermal stress, thereby eliminating the occurance of cracking at the interface of conductive pads. A method of fabricating such a semiconductor package is also provided.

Abstract: A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield.

Abstract: A fabrication method of a semiconductor package is disclosed, which includes the steps of: providing a semiconductor structure having a carrier, a circuit portion formed on the carrier and a plurality of semiconductor elements disposed on the circuit portion; disposing a lamination member on the semiconductor elements; forming an insulating layer on the circuit portion for encapsulating the semiconductor elements; and removing the carrier. The lamination member increases the strength between adjacent semiconductor elements so as to overcome the conventional cracking problem caused by a CTE mismatch between the semiconductor elements and the insulating layer when the carrier is removed.

Abstract: A semiconductor device is provided, including: a substrate having opposing first and second surfaces and a plurality of conductive vias passing through the first and second surfaces; an insulating layer formed on the first surface of the substrate and exposing end portions of the conductive vias therefrom; and a buffer layer formed on the insulating layer at peripheries of the end portions of the conductive vias, thereby increasing product reliability and good yield.

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract: A package structure is provided, which includes: a wafer having a surface with a groove, a thin film closing an open end of the groove and electrical contacts; a chip having a surface with a conductive layer and an opposite surface with a concave portion and a seal ring located at a periphery of the concave portion, the chip being disposed on the wafer with the seal ring surrounding the thin film and the electrical contacts located outside the seal ring; an encapsulant formed on the wafer for encapsulating the chip and the electrical contacts; a plurality of sub-conductive wires embedded in the encapsulant with one ends exposed from a top surface of the encapsulant and the other ends in electrical connection with the electrical contacts; and a through hole penetrating the wafer and communicating with the concave portion, thereby reducing the fabrication cost and size of the package structure.

Abstract: A method of fabricating a semiconductor package is provided, including: disposing a plurality of semiconductor elements on a carrier through an adhesive layer in a manner that a portion of the carrier is exposed from the adhesive layer; forming an encapsulant to encapsulate the semiconductor elements; removing the adhesive layer and the carrier to expose the semiconductor elements; and forming a build-up structure on the semiconductor elements. Since the adhesive layer is divided into a plurality of separated portions that will not affect each other due to expansion or contraction when temperature changes, the present invention prevents positional deviations of the semiconductor elements during a molding process, thereby increasing the alignment accuracy.

Abstract: A method of fabricating a semiconductor package is provided, including: disposing a plurality of semiconductor elements on a carrier through an adhesive layer in a manner that a portion of the carrier is exposed from the adhesive layer; forming an encapsulant to encapsulate the semiconductor elements; removing the adhesive layer and the carrier to expose the semiconductor elements; and forming a build-up structure on the semiconductor elements. Since the adhesive layer is divided into a plurality of separated portions that will not affect each other due to expansion or contraction when temperature changes, the present invention prevents positional deviations of the semiconductor elements during a molding process, thereby increasing the alignment accuracy.

Abstract: A semiconductor package is provided, which includes: a carrier; a frame having a plurality of openings, wherein the frame is bonded to the carrier and made of a material different from that of the carrier; a plurality of electronic elements disposed in the openings of the frame, respectively; an encapsulant formed in the openings of the frame for encapsulating the electronic elements; and a circuit layer formed on and electrically connected to the electronic elements. By accurately controlling the size of the openings of the frame, the present invention increases the accuracy of positioning of the electronic elements so as to improve the product yield in subsequent processes.

Abstract: A package structure is provided, which includes: a frame having a cavity penetrating therethrough; a semiconductor chip received in the cavity of the frame, wherein the semiconductor chip has opposite active and inactive surfaces exposed from the cavity of the frame; a dielectric layer formed in the cavity to contact and fix in position the semiconductor chip, wherein a surface of the dielectric layer is flush with a first surface of the frame toward which the active surface of the semiconductor chip faces; and a circuit structure formed on the surface of the dielectric layer flush with the first surface of the frame and electrically connected to the active surface of the semiconductor chip, thereby saving the fabrication cost and reducing the thickness of the package structure.

Abstract: A semiconductor package and a method for fabricating the semiconductor package are provided. The semiconductor package includes a base layer, a plurality of conductive pillars, a semiconductor element, and an encapsulation. The base layer has opposing first and second surfaces and a receiving part. The conductive pillars are formed on the second surface. Each of the conductive pillars has first and second terminals, and the second terminal is distant from the second surface of the base layer. The semiconductor element is received in the receiving part, and has opposing active and passive surfaces, and the active surface is exposed from the first surface. The encapsulation is formed on the second surface, encapsulates the conductive pillars and the semiconductor element, and has opposing third and fourth surfaces, and the second terminals of the conductive pillars are exposed from the fourth surface. The semiconductor package is provided with the conductive pillars having fine pitches.

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract: A wafer level package having a pressure sensor and a fabrication method thereof are provided. A wafer having the pressure sensor is bonded to a lid, and electrical connecting pads are formed on the wafer. After the lid is cut, wire-bonding and packaging processes are performed. Ends of bonding wires are exposed and serve as an electrical connecting path. A bottom opening is formed on a bottom surface of the wafer, in order to form a pressure sensor path.

Abstract: A semiconductor package includes: a dielectric layer having opposite first and second surfaces; a semiconductor chip embedded in the dielectric layer and having a plurality of electrode pads; a plurality of first metal posts disposed on the electrode pads of the semiconductor chip, respectively, such that top ends of the first metal posts are exposed from the first surface; at least a second metal post penetrating the dielectric layer such that two opposite ends of the second metal post are exposed from the first and second surfaces, respectively; a first circuit layer formed on the first surface for electrically connecting the first and second metal posts; and a second circuit layer formed on the second surface for electrically connecting the second metal post. The semiconductor package dispenses with conventional laser ablation and electroplating processes for forming conductive posts in a molding compound, thereby saving fabrication time and cost.

Abstract: A package structure is provided, which includes: a wafer having a surface with a groove, a thin film closing an open end of the groove and electrical contacts; a chip having a surface with a conductive layer and an opposite surface with a concave portion and a seal ring located at a periphery of the concave portion, the chip being disposed on the wafer with the seal ring surrounding the thin film and the electrical contacts located outside the seal ring; an encapsulant formed on the wafer for encapsulating the chip and the electrical contacts; a plurality of sub-conductive wires embedded in the encapsulant with one ends exposed from a top surface of the encapsulant and the other ends in electrical connection with the electrical contacts; and a through hole penetrating the wafer and communicating with the concave portion, thereby reducing the fabrication cost and size of the package structure.

Abstract: A method of fabricating a semiconductor package is provided, including: providing a carrier having a plurality of chip areas defined thereon, and forming a connection unit on each of the chip areas; disposing a semiconductor element on each of the connection units; forming an insulating layer on the carrier and the semiconductor elements; and forming on the insulating layer a circuit layer electrically connected to the semiconductor elements. Since being formed only on the chip areas instead of on the overall carrier as in the prior art, the connection units are prevented from expanding or contracting during temperature cycle, thereby avoiding positional deviations of the semiconductor elements.