Patents by Inventor Shih-Ming Chen
Shih-Ming Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12266566Abstract: A method includes forming a first conductive feature on a substrate, forming a via that contacts the first conductive feature, the via comprising a conductive material, performing a Chemical Mechanical Polishing (CMP) process to a top surface of the via, depositing an Interlayer Dielectric (ILD) layer on the via, forming a trench within the ILD layer to expose the via, and filling the trench with a second conductive feature that contacts the via, the second conductive feature comprising a same material as the conductive material.Type: GrantFiled: August 9, 2023Date of Patent: April 1, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Yuan Chen, Shih-Chuan Chiu, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin
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Publication number: 20250107117Abstract: A Schottky diode includes a substrate with an epitaxy layer on which a cathode region and an anode region are defined. A cathode structure and an anode structure are formed in the cathode region and the anode region respectively and horizontally separated by a distance. The anode structure includes a plurality of p-type doped regions diffused from the epitaxy layer toward the substrate, with an interval is formed between adjacent two p-type doped regions. A backside metal film and a backside protection layer are sequentially formed on a back surface of the substrate. Since the manufacturing of the Schottky diode does not involve wire bonding and molding processes, the overall thickness of the Schottky diode is reduced and heat dissipation is improved. With the backside metal film on the back side of the substrate, an equivalent resistance and a forward voltage of the Schottky diode can be reduced.Type: ApplicationFiled: November 15, 2023Publication date: March 27, 2025Inventors: CHUNG-HSIUNG HO, CHI-HSUEH LI, CHIA-WEI CHEN, YU-MING HSU, WEN-LIANG HUANG, MING-KUN HSIN, SHIH-MING CHEN
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Patent number: 12255104Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.Type: GrantFiled: August 2, 2023Date of Patent: March 18, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Ching Lee, Hsin-Han Tsai, Shih-Hang Chiu, Tsung-Ta Tang, Chung-Chiang Wu, Hung-Chin Chung, Hsien-Ming Lee, Da-Yuan Lee, Jian-Hao Chen, Chien-Hao Chen, Kuo-Feng Yu, Chia-Wei Chen, Chih-Yu Hsu
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Publication number: 20250081387Abstract: A liquid-cooling heat dissipation device includes a substrate, a fin assembly, a shell and a shunt component. The fin assembly is disposed on the substrate and has a plurality of channels parallelly arranged, and each of the channels has an inlet and an outlet opposite to each other. The shell is disposed on the substrate and has a liquid input port, a chamber is jointly formed by the shell and the substrate, and the chamber is located between the liquid input port and each of the inlets. The shunt component is disposed in the shell and has a plurality of manifold passages, the liquid input port is in communication with the chamber and each of the inlets through each of the manifold passages. Accordingly, the amount of fin member is increased in a fixed space to increase the heat dissipating efficiency.Type: ApplicationFiled: September 5, 2023Publication date: March 6, 2025Inventors: Pang-Hung LIAO, Chih-Wei CHEN, Shih-Ming WANG
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Publication number: 20250081508Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first fin and a gate electrode. The first fin extends along a first direction. The gate electrode has a sidewall extending along a second direction different from the first direction. The sidewall of the gate electrode defines an indentation adjacent to the first fin in a top view.Type: ApplicationFiled: January 19, 2024Publication date: March 6, 2025Inventors: Yuan Tsung TSAI, Yao Jui KUO, Chia-Wei FAN, Ying Ming WANG, Shih-Hao CHEN, Ling-Sung WANG
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Publication number: 20250081730Abstract: A display may include an array of pixels such as light-emitting diode pixels. The pixels may include multiple circuitry decks that each include one or more circuit components such as transistors, capacitors, and/or resistors. The circuitry decks may be vertically stacked. Each circuitry deck may include a planarization layer formed from a siloxane material that conforms to underlying components and provides a planar upper surface. In this way, circuitry components may be vertically stacked to mitigate the size of each pixel footprint. The circuitry components may include capacitors that include both a high-k dielectric layer and a low-k dielectric layer. The display pixel may include a via with a width of less than 1 micron.Type: ApplicationFiled: June 26, 2024Publication date: March 6, 2025Inventors: Andrew Lin, Alper Ozgurluk, Chao Liang Chien, Cheuk Chi Lo, Chia-Yu Chen, Chien-Chung Wang, Chih Pang Chang, Chih-Hung Yu, Chih-Wei Chang, Chin Wei Hsu, ChinWei Hu, Chun-Kai Tzeng, Chun-Ming Tang, Chun-Yao Huang, Hung-Che Ting, Jung Yen Huang, Lungpao Hsin, Shih Chang Chang, Tien-Pei Chou, Wen Sheng Lo, Yu-Wen Liu, Yung Da Lai
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Publication number: 20250075989Abstract: A liquid-cooling heat sink includes a substrate, a fin assembly, and a housing. The substrate has a longitudinal direction. The fin assembly is arranged on the substrate and includes multiple fins arranged at interval to form flow channels along the longitudinal direction. Each flow channel includes an inlet and an outlet opposite to each other. A turbulence structure divides a cross-section of at least one of the flow channels into at least two diverging passages. The housing arranged on the substrate covers the inlets and includes an inlet port and a chamber. Accordingly, the number of fins may be increased in a fixed space, and each flow channel has a smaller cross-sectional area to increase flow velocity of a dielectric liquid. Moreover, this reduces the flow resistance of the dielectric liquid in a turbulent flow area in each flow channel to improve the heat dissipation efficiency.Type: ApplicationFiled: August 30, 2023Publication date: March 6, 2025Inventors: Pang-Hung LIAO, Chih-Wei CHEN, Shih-Ming WANG
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Patent number: 12235197Abstract: An automatic processing device for liquid samples includes a sample region, a control module, an image identification device and a centrifuge. The sample region is configured to accommodate a plurality of centrifuge tubes. The control module includes a mechanical module. The mechanical module is configured to unscrew or tighten upper caps of the centrifuge tubes, and is configured to draw liquid from the centrifuge tubes or discharge liquid to the centrifuge tubes. The image identification device is coupled to the control module. The centrifuge is coupled to the control module. The centrifuge is configured to accommodate the centrifuge tubes and perform centrifugal treatment.Type: GrantFiled: April 21, 2021Date of Patent: February 25, 2025Assignees: CANCER FREE BIOTECH LTD., SONGYI SYSTEM CO., LTD.Inventors: Po-Han Chen, Shih-Pei Wu, Yi-Hsuan Chen, Chung-I Chen, Chun-Chieh Chiang, Chi-Ming Lee
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Publication number: 20250048493Abstract: Techniques pertaining to power saving by data throughput pattern prediction in wireless communications are described. A user equipment (UE) determines whether a probability of a first value being greater than a second value is higher than a threshold. The UE triggers a radio resource control (RRC) connection release with a network responsive to the probability being higher than the threshold. The first value represents a succeeding continuous duration of no uplink (UL) and downlink (DL) data. The second value represents an RRC inactivity timer duration plus a threshold duration.Type: ApplicationFiled: August 4, 2023Publication date: February 6, 2025Inventors: Hung-Yueh Chen, Byeng Hyun Kim, Jung Shup Shin, Pei-Tsung Wu, Wei-Hao Pan, Shih-Wei Sun, Wei-Ming Yin
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Publication number: 20250048706Abstract: A sidewall protection layer is formed on sidewall spacers of a dummy gate structure of a semiconductor device prior to etching an underlying fin structure to form a source/drain recess. The sidewall protection layer enables the profile of the source/drain recess to be precisely controlled so that etching into residual dummy gate material near the source/drain recess is minimized or prevented. The sidewall protection layer may be removed or retained in the semiconductor device after formation of the source/drain recess. The sidewall protection layer reduces the likelihood of the source/drain regions of the semiconductor device contacting the metal gate structures of the semiconductor device after the dummy gate structures are replaced with the metal gate structures. Thus, the sidewall protection layer reduces the likelihood of electrical shorting between the source/drain regions and the metal gate structures.Type: ApplicationFiled: November 2, 2023Publication date: February 6, 2025Inventors: Tsung-Jui WU, Tsung-Yin HSU, Ying Ming WANG, Shih-Hao CHEN, Sung-Hsin YANG
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Patent number: 12219747Abstract: SRAM designs based on GAA transistors are disclosed that provide flexibility for increasing channel widths of transistors at scaled IC technology nodes and relax limits on SRAM performance optimization imposed by FinFET-based SRAMs. GAA-based SRAM cells described have active region layouts with active regions shared by pull-down GAA transistors and pass-gate GAA transistors. A width of shared active regions that correspond with the pull-down GAA transistors are enlarged with respect to widths of the shared active regions that correspond with the pass-gate GAA transistors. A ratio of the widths is tuned to obtain ratios of pull-down transistor effective channel width to pass-gate effective channel width greater than 1, increase an on-current of pull-down GAA transistors relative to an on-current of pass-gate GAA transistors, decrease a threshold voltage of pull-down GAA transistors relative to a threshold voltage of pass-gate GAA transistors, and/or increases a ? ratio of an SRAM cell.Type: GrantFiled: August 12, 2021Date of Patent: February 4, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Hao Pao, Chih-Chuan Yang, Shih-Hao Lin, Chih-Hsuan Chen, Kian-Long Lim, Chao-Yuan Chang, Feng-Ming Chang, Lien Jung Hung, Ping-Wei Wang
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Patent number: 12211888Abstract: A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.Type: GrantFiled: January 27, 2021Date of Patent: January 28, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Chih Lai, Chi-Mao Hsu, Shih-Min Chou, Nien-Ting Ho, Wei-Ming Hsiao, Li-Han Chen, Szu-Yao Yu, Hsin-Fu Huang
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Patent number: 12205889Abstract: A semiconductor device includes a semiconductor substrate, an interconnection layer and an inductor pattern. The interconnection layer is disposed on the semiconductor substrate. The inductor pattern is electrically connected to the interconnection layer. The inductor pattern includes a first conductive line joined with a first terminal, a second conductive line joined with a second terminal, and a plurality of conductive coils. The conductive coils are joining the first conductive line to the second conductive line, and includes an outer coil joined with the first conductive line, an inner coil joined with the second conductive line and the outer coil. The second conductive line is spaced apart from a first side of the inner coil in a first direction by distance Y, the second terminal is spaced apart from a second side of the inner coil in a second direction by distance X1, wherein X1>1.25Y.Type: GrantFiled: August 31, 2021Date of Patent: January 21, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Hsien Lai, Shih-Ming Chen, Han-Chang Hsieh
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Patent number: 12158156Abstract: A ceiling fan infrared detection and control system has a wall-mounted controller, a ceiling fan controller, and a motor. The wall-mounted controller has an infrared sensor that is arranged outwardly and horizontally. The wall-mounted controller is pivotally equipped with a lens outside the infrared sensor for detecting infrared rays of a human body within a detection range. The control unit can output a wireless signal to the ceiling fan controller to control the motor according to the infrared detection result. The ceiling fan infrared detection and control system uses the technical feature that the lens is rotatable relative to the wall-mounted controller, so that the detection range can be moved synchronously along with the lens. The detection range has directivity and the function of adjusting the detection position, which can avoid false detection of a pet below the height of the detection range.Type: GrantFiled: December 13, 2022Date of Patent: December 3, 2024Assignee: AIR COOL INDUSTRIAL CO., LTD.Inventor: Shih-Ming Chen
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Publication number: 20240387362Abstract: A semiconductor device includes a semiconductor substrate, an interconnection layer and an inductor pattern. The interconnection layer is disposed on the semiconductor substrate. The inductor pattern is electrically connected to the interconnection layer. The inductor pattern includes a first conductive line joined with a first terminal, a second conductive line joined with a second terminal, and a plurality of conductive coils. The conductive coils are joining the first conductive line to the second conductive line, and includes an outer coil joined with the first conductive line, an inner coil joined with the second conductive line and the outer coil. The second conductive line is spaced apart from a first side of the inner coil in a first direction by distance Y, the second terminal is spaced apart from a second side of the inner coil in a second direction by distance X1, wherein X1>1.25Y.Type: ApplicationFiled: July 29, 2024Publication date: November 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Hsien Lai, Shih-Ming Chen, Han-Chang Hsieh
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Patent number: 12034389Abstract: A brushless DC motor control system for a ceiling fan is electrically connected to a brushless DC motor, and includes a first switch, a detection module, a timer, a processing module, and a driving module. The first switch sends a first switch signal to the detection module for detection. The detection module outputs an operating electric potential detection signal to the timer. The timer outputs an operating electric potential timing signal to the processing module, so that the processing module outputs a first control signal and a second control signal to the driving module for controlling the brushless DC motor to change the rotational speed and the rotational direction respectively, increasing the convenience of use.Type: GrantFiled: February 15, 2022Date of Patent: July 9, 2024Assignee: AIR COOL INDUSTRIAL CO., LTD.Inventor: Shih-Ming Chen
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Publication number: 20240191720Abstract: A ceiling fan infrared detection and control system has a wall-mounted controller, a ceiling fan controller, and a motor. The wall-mounted controller has an infrared sensor that is arranged outwardly and horizontally. The wall-mounted controller is pivotally equipped with a lens outside the infrared sensor for detecting infrared rays of a human body within a detection range. The control unit can output a wireless signal to the ceiling fan controller to control the motor according to the infrared detection result. The ceiling fan infrared detection and control system uses the technical feature that the lens is rotatable relative to the wall-mounted controller, so that the detection range can be moved synchronously along with the lens. The detection range has directivity and the function of adjusting the detection position, which can avoid false detection of a pet below the height of the detection range.Type: ApplicationFiled: December 13, 2022Publication date: June 13, 2024Inventor: Shih-Ming CHEN
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Publication number: 20230260939Abstract: A method of forming a semiconductor device includes forming a plurality of metal pads over a semiconductor substrate of a wafer, forming a passivation layer covering the plurality of metal pads, patterning the passivation layer to reveal the plurality of metal pads, forming a first polymer layer over the passivation layer, forming a plurality of redistribution lines extending into the first polymer layer and the passivation layer to connect to the plurality of metal pads, forming a second polymer layer over the first polymer layer, and patterning the second polymer layer to reveal the plurality of redistribution lines. The first polymer layer is further revealed through openings in remaining portions of the second polymer layer.Type: ApplicationFiled: April 28, 2023Publication date: August 17, 2023Inventors: Shih-Ming Chen, Ching-Tien Su
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Publication number: 20230258194Abstract: A brushless DC motor control system for a ceiling fan is electrically connected to a brushless DC motor, and includes a first switch, a detection module, a timer, a processing module, and a driving module. The first switch sends a first switch signal to the detection module for detection. The detection module outputs an operating electric potential detection signal to the timer. The timer outputs an operating electric potential timing signal to the processing module, so that the processing module outputs a first control signal and a second control signal to the driving module for controlling the brushless DC motor to change the rotational speed and the rotational direction respectively, increasing the convenience of use.Type: ApplicationFiled: February 15, 2022Publication date: August 17, 2023Inventor: Shih-Ming Chen
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Patent number: 11686317Abstract: A long-distance speed control system for a brushless DC motor of a fan is provided. The long-distance speed control system includes a switch connected with a mains power supply, a switch circuit, a voltage detection module, a power cord, a processing unit, and a drive unit, which can control the multi-stage rotational speed of the motor. In the field of brushless DC motors for fans, there is no need to use analog-to-digital conversion chips between the mains power supply and the processor, having the advantages of low cost, environmental protection, and reduction of waste of earth resources. Besides, the switch, the switch circuit and the power cord can withstand the mains power supply, having the advantages of less signal attenuation and long-distance transmission.Type: GrantFiled: July 9, 2021Date of Patent: June 27, 2023Assignee: AIR COOL INDUSTRIAL CO., LTD.Inventor: Shih-Ming Chen