Abstract: A shear thickening formulation and composite material employing the same are provided. The shear thickening formulation includes inorganic particles and polyethylene glycol. The inorganic particles and the polyethylene glycol have a weight ratio of 3 to 4. The inorganic particles can be silica, aluminum oxide, silicon carbide, nano diamond, or a combination thereof.

Abstract: An aeration apparatus, comprising: a gas-liquid mixing-circulating module, a gas supplying module, a controlling module and a cleaning unit, wherein the gas-liquid mixing-circulating module comprises: a first switch valve, connecting to a liquid outlet of a culture tank; a booster pump, connecting to the first switch valve; a micro-bubble producing device, having one end connecting to the booster pump and the other end connecting to a liquid inlet of the culture tank; a first proportional valve; a venturi tube, having a head, a tail and a branch, the other opening of the first proportional valve connecting to the head; and a second proportional valve, having an opening connecting to the tail, and the other opening connecting to the second tube, wherein, a fifth tube transfer gas to the venturi tube through the branch; wherein, the controlling module regulates the gas-liquid mixing-circulating module, the gas supplying module and the cleaning unit.

Abstract: A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.

Abstract: A method for manufacturing a liquid crystal display panel includes respectively forming two polymer layers on a first substrate and a second substrate. The two polymer layers are rubbed. A plurality of liquid crystal molecules and a plurality of monomers are provided between the first substrate and the second substrate, and the polymer layers are disposed facing the liquid crystal molecules and the monomers. The monomers are polymerized to form two polymer rubbing layers with the polymer layers.

Abstract: An optical thin film includes: a transparent substrate including a first surface and a second surface which is opposite to the first surface; a first light-condensing layer formed on the first surface of the transparent substrate, the first light-condensing layer having a haze value ranging from 5% to 30% and a surface roughness ranging from 0.1 RMS to 1 RMS; and a second light-condensing layer formed on the second surface of the transparent substrate. The second light-condensing layer has a haze value ranging from 70% to 100% and a surface roughness ranging from 1 RMS to 10 RMS.

Abstract: An optical thin film includes: a transparent substrate including a first surface and a second surface which is opposite to the first surface; a first light-condensing layer formed on the first surface of the transparent substrate, the first light-condensing layer having a haze value ranging from 5% to 30% and a surface roughness ranging from 0.1 RMS to 1 RMS; and a second light-condensing layer formed on the second surface of the transparent substrate. The second light-condensing layer has a haze value ranging from 70% to 100% and a surface roughness ranging from 1 RMS to 10 RMS.

Abstract: An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region and a non-device region neighboring the device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device region and the non-device region; a ring structure disposed between the semiconductor substrate and the package layer, and between the spacing layer and the device region, and surrounding a portion of the non-device region; and an auxiliary pattern including a hollow pattern formed in the spacing layer or the ring structure, a material pattern located between the spacing layer and the device region, or combinations thereof.

Abstract: An interleaved flyback converter device with leakage energy recycling includes: two flyback converters and an input power. Each flyback converter includes a capacitor, a switch, two diodes, and a transformer. The input power is connected to the capacitors of the two flyback converters respectively. By using the capacitors as input voltage, the two flyback converters are provided with lower voltage rating. The diodes are used to recycle leakage energy directly, and to clamp voltage on power components. Therefore, in addition to enhancing efficiency via recycling leakage energy, the two flyback converters have lower switching losses due to lower switching voltage.

Abstract: A lens film and a manufacturing method thereof are disclosed. The lens film manufacturing method includes the steps of: forming an alignment film on a glass substrate; rubbing the alignment film along a rubbing direction; dispersing a liquid crystal polymer (LCP) material between the alignment film of the glass substrate and a lens mold; rolling the lens mold along a rolling direction to make the LCP material to form a lens film. A plurality of liquid crystal molecules of the lens film is affected by the alignment film to align along the rubbing direction. The lens film and a base panel having a polarization direction are operated in a LCD apparatus. The angle between the rubbing direction and the polarization direction is less than 15°.

Abstract: A fin type heat sink includes a heat conducting base, fins, pressing plates and positioning members. The fins are parallely installed with an interval apart from each other on the heat conducting base, and a fixing plate is perpendicularly extended from the bottom of each fin. The fixing plate includes through holes, and the pressing plate is installed corresponding to the fin. Each pressing plate is installed on the fixing plate and has combining holes corresponding to the through holes, and the positioning member is fixed onto the heat conducting base, and the positioning member is passed through the through hole and the combining hole and fixed onto the pressing plate, such that the pressing plate presses the fixing plate flatly onto the heat conducting base. Therefore, heat at the heat conducting base can be conducted to the fins quickly to enhance the thermal conduction effect.

Abstract: A pressing-shaping method for manufacturing a circular cooling base for being embedded with fins and a mold used in the method are disclosed. The method includes providing a blank ingot that has a first surface, a second surface, and a lateral circular surface encircling the rims of the first and second surfaces. The method further includes using a mold to press the blank ingot to cause the first surface of the blank ingot to indent inward to form a groove, and to cause a plurality of clipping grooves to be formed on the lateral circular surface of the blank ingot through extrusion. As a result, the blank ingot is shaped into the circular cooling base for being embedded with fins.

Abstract: An antireflective transparent zeolite hardcoat and fabrication method thereof. The transparent zeolite hardcoat comprises a zeolite nanostructure made of zeolite nanocrystals vertically stacked into a porous structure on a substrate, wherein the porosity increases with structure height, thereby providing a smooth refractive index transition.

Abstract: The invention provides a method for forming optical compensating films, including: (a) providing a suspension containing clay; (b) adding a mono-functional acrylic oligomer of formula (I) in the suspension, wherein n1 is 2-25, R1 is C1-10 alkyl or H and R2 is H or CH3; (c) adding a water-soluble polymer in the suspension; (d) adding a bi-functional acrylic oligomer of formula (II) in the suspension, wherein n2 is 3-50, and R3 and R4 independently are H or CH3; (e) after the step (d), drying the suspension to form a film; (f) exposing the film under UV light to cure the film; and (g) stretching the film, wherein the film has only a negative C-plate property before the stretching and has both negative C-plate and positive A-plate properties after the stretching.

Abstract: A heat pipe and thermo-conductive body assembling structure and a method for manufacturing the same are disclosed. The thermo-conductive body is provided a trough with two pressing arms at the opening thereof. The heat pipe is accommodated in the trough and pressed by the pressing arms. An exposed portion of the heat pipe and outer surfaces of the pressing arms are coplanar.

Abstract: A substrate assembly containing a conductive film and a fabrication method thereof are provided. The substrate assembly includes a polymer substrate, a surface treatment layer formed on the polymer substrate and a conductive film formed on the surface treatment layer, wherein the conductive film is formed by sintering a metal conductive ink and the surface treatment layer is formed from a composite material of an auxiliary filler and a polymer. The auxiliary filler in the surface treatment layer can deliver energy into the metal conductive ink for sintering the conductive metal ink.

Abstract: An embodiment of the invention provides a chip package, which includes: a semiconductor substrate having a device region and a non-device region neighboring the device region; a package layer disposed on the semiconductor substrate; a spacing layer disposed between the semiconductor substrate and the package layer and surrounding the device region and the non-device region; a ring structure disposed between the semiconductor substrate and the package layer, and between the spacing layer and the device region, and surrounding a portion of the non-device region; and an auxiliary pattern including a hollow pattern formed in the spacing layer or the ring structure, a material pattern located between the spacing layer and the device region, or combinations thereof.

Abstract: An interleaved flyback converter device with leakage energy recycling includes: two flyback converters and an input power. Each flyback converter includes a capacitor, a switch, two diodes, and a transformer. The input power is connected to the capacitors of the two flyback converters respectively. By using the capacitors as input voltage, the two flyback converters are provided with lower voltage rating. The diodes are used to recycle leakage energy directly, and to clamp voltage on power components. Therefore, in addition to enhancing efficiency via recycling leakage energy, the two flyback converters have lower switching losses due to lower switching voltage.

Abstract: The backlight module includes a first lamp, a second lamp, a circuit board and a driving circuit board. The circuit board includes chambers to be connected to the first lamp and the second lamp, and capacitors to stabilize a voltage across two ends of each of the first lamp and the second lamp. The driving circuit board includes an inverter for driving the first lamp and the second lamp via the circuit board.

Abstract: A circuit board structure, comprising: a first metal layer, including at least one cavity; and a plurality of first pads, for connecting at least one differential signal transmission line; wherein at least part of a vertical projection of the first pad, which is projected on the first metal layer, is overlapped with the cavity.

Abstract: A method for fabricating a semiconductor device is provided. A substrate comprising a P-well is provided. A low voltage device area and a high voltage device area are defined in the P-well. A photoresist layer is formed on the substrate. A photomask comprising a shielding region is provided. The shielding region is corresponded to the high voltage device area. A pattern of the photomask is transferred to the photoresist layer on the substrate by a photolithography process using the photomask. A P-type ion field is formed outside of the high-voltage device area by selectively doping P-type ions into the substrate using the photoresist layer as a mask.