Abstract: A package component includes a substrate, wherein the substrate has a front surface and a back surface over the front surface. A through-via penetrates through the substrate. A conductive feature is disposed over the back surface of the substrate and electrically coupled to the through-via. A first dielectric pattern forms a ring covering edge portions of the conductive feature. An Under-Bump-Metallurgy (UBM) is disposed over and in contact with a center portion of the conductive feature. A polymer contacts a sidewall of the substrate. A second dielectric pattern is disposed over and aligned to the polymer. The first and the second dielectric patterns are formed of a same dielectric material, and are disposed at substantially a same level.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and forming a support structure on the top surface of the first substrate, the support structure being physically separated from the die with a top surface of the support structure being coplanar with a top surface of the die. The method further includes performing a sawing process on the first substrate, the sawing process sawing through the support structure.

Abstract: A semiconductor structure and a method of manufacture are provided. Devices, such as integrated circuit dies, are mounted on a substrate, such as another die, packaging substrate, interposer, or the like, and recesses are formed in the substrate along the scribe lines. One or more molding compound layers are formed in the recesses and between adjacent dies. A backside thinning process may be performed to expose the molding compound in the recesses. A singulation process is performed in the molding compound layer in the recesses. In an embodiment, a first molding compound layer is formed in the recess, and a second molding compound is formed over the first molding compound layer and between adjacent dies. The devices may be placed on the substrate before or after forming the recesses.

Abstract: An anti-reflection device, comprising: a first optical fiber, having a first optical fiber core; and a second optical fiber, having a second optical fiber core which is fusion spliced to the first fiber core to form a spliced point optical fiber core. Thereby, the present disclosure provides a method for manufacturing an anti-reflection device, comprising the step of: providing a fusion splicer to perform a parameter setup process upon at least one optical fiber so as to proceed with a splice process on the at least one optical fiber based on the result of the parameter setup process, while enabling an optical fiber alignment operation, an end surface preheating operation, an optical fiber splicing operation and an optical fiber fusion stretching operation during the proceeding of the splice process.

Abstract: A package component includes a substrate, wherein the substrate has a front surface and a back surface over the front surface. A through-via penetrates through the substrate. A conductive feature is disposed over the back surface of the substrate and electrically coupled to the through-via. A first dielectric pattern forms a ring covering edge portions of the conductive feature. An Under-Bump-Metallurgy (UBM) is disposed over and in contact with a center portion of the conductive feature. A polymer contacts a sidewall of the substrate. A second dielectric pattern is disposed over and aligned to the polymer. The first and the second dielectric patterns are formed of a same dielectric material, and are disposed at substantially a same level.

Abstract: An apparatus for generating a pulse train with an adjustable time interval is provided. The apparatus, being an annular optical cavity structure, includes a seed source receiving end, a pump source receiving end, an optical coupler, an optical combiner, a gain fiber, an optical path time regulator and a beam splitter. Thus, the apparatus is capable of generating a pulse train with an adjustable time interval to increase material processing quality and speed.

Abstract: Packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes a redistribution layer (RDL) and a plurality of through package vias (TPV's) coupled to the RDL. Each of the plurality of TPV's comprises a first region proximate the RDL and a second region opposite the first region. The first region comprises a first width, and the second region comprises a second width. The second width is greater than the first width.

Abstract: A package component includes a substrate, wherein the substrate has a front surface and a back surface over the front surface. A through-via penetrates through the substrate. A conductive feature is disposed over the back surface of the substrate and electrically coupled to the through-via. A first dielectric pattern forms a ring covering edge portions of the conductive feature. An Under-Bump-Metallurgy (UBM) is disposed over and in contact with a center portion of the conductive feature. A polymer contacts a sidewall of the substrate. A second dielectric pattern is disposed over and aligned to the polymer. The first and the second dielectric patterns are formed of a same dielectric material, and are disposed at substantially a same level.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and forming a support structure on the top surface of the first substrate, the support structure being physically separated from the die with a top surface of the support structure being coplanar with a top surface of the die. The method further includes performing a sawing process on the first substrate, the sawing process sawing through the support structure.

Abstract: A reading circuit of a gyroscope is provided. The reading circuit includes a driving unit, a high pass filter, a signal processing unit, and a low pass filter. The driving unit generates a resonance signal for a resonator of the gyroscope and generates a demodulation signal for the signal processing unit. The signal processing unit provides a modulation signal to a Coriolis accelerometer of the gyroscope. An input terminal of the high pass filter receives an output signal of the Coriolis accelerometer. The signal processing unit processes and demodulates an output of the high pass filter according to the demodulation signal and outputs a demodulation result to the low pass filter.

Abstract: Flexible structures and method of providing a flexible structure are disclosed. In some embodiments, a method of providing a flexible structure includes: providing a flex substrate having a device bonded to a first side of the flex substrate; and attaching a rigid layer to a second side of the flex substrate opposite the first side using an adhesive layer.

Abstract: A polarization modulation device for wideband laser comprises a first polarization maintaining optical fiber, a second polarization maintaining optical fiber, and a non-polarization maintaining optical fiber. The non-polarization maintaining optical fiber includes a first polarization controller coupled with the first polarization maintaining optical fiber, and a second polarization controller coupled with the second polarization maintaining optical fiber.

Abstract: An apparatus for generating a short-pulse laser using a temporally modulated sideband gain is provided. The apparatus includes a laser diode and an external reflector. By use of a time difference resulted by a nanosecond laser pulse signal at the external reflector, a sideband gain is obtained for generating a short-pulse picosecond laser output.

Abstract: One embodiment discloses an apparatus integrating a microelectromechanical system device with a circuit chip which includes a circuit chip, a microelectromechanical system device, a sealing ring, and a lid. The circuit chip comprises a substrate and a plurality of metal bonding areas. The substrate has an active surface with electrical circuit area, and the metal bonding areas are disposed on the active surface and electrically connected to the electrical circuits. The microelectromechanical system device comprises a plurality of bases and at least one sensing element. The bases are connected to at least one of the metal bonding areas. The at least one sensing element is elastically connected to the bases. The sealing ring surrounds the bases, and is connected to at least one of the metal bonding areas. The lid is opposite to the active surface of the circuit chip, and is connected to the sealing ring to have a hermetic chamber which seals the sensing element and the active surface of the circuit chip.

Abstract: One embodiment discloses an apparatus integrating a microelectromechanical system device with a circuit chip which comprises a circuit chip, a microelectromechanical system device, a sealing ring, and a lid. The circuit chip comprises a substrate and a plurality of metal bonding areas. The substrate has an active surface with electrical circuit area, and the metal bonding areas are disposed on the active surface and electrically connected to the electrical circuits. The microelectromechanical system device comprises a plurality of bases and at least one sensing element. The bases are connected to at least one of the metal bonding areas. The at least one sensing element is elastically connected to the bases. The sealing ring surrounds the bases, and is connected to at least one of the metal bonding areas. The lid is opposite to the active surface of the circuit chip, and is connected to the sealing ring to have a hermetic chamber which seals the sensing element and the active surface of the circuit chip.

Abstract: An ultrafast laser generating system comprises a laser signal generator, a laser signal amplifier and a beam splitting element. The laser signal generator is configured to generate a first nanosecond pulse laser. The laser amplifier is configured to amplify the first nanosecond pulse laser from the laser signal generator so as to generate a second nanosecond pulse laser, which includes a picosecond pulse laser. The beam splitting element is configured to receive the second nanosecond pulse laser and split the picosecond pulse laser from the second nanosecond pulse laser.

Abstract: The disclosure relates to a micro-electromechanical system (MEMS) device having an electrical insulating structure. The MEMS device includes at least one moving part, at least one anchor, at least one spring and an insulating layer. The spring is connected to the anchor and to the moving part. The insulating layer is disposed in the moving part and the anchor. Each of the moving part and the anchor is divided into two conductive portions by the insulating layer. Whereby, the electrical signals of different moving parts are transmitted through the insulated electrical paths which are not electrically connected.

Abstract: An apparatus for generating a short-pulse laser using a temporally modulated sideband gain is provided. The apparatus includes a laser diode and an external reflector. By use of a time difference resulted by a nanosecond laser pulse signal at the external reflector, a sideband gain is obtained for generating a short-pulse picosecond laser output.

Abstract: A package component includes a substrate, wherein the substrate has a front surface and a back surface over the front surface. A through-via penetrates through the substrate. A conductive feature is disposed over the back surface of the substrate and electrically coupled to the through-via. A first dielectric pattern forms a ring covering edge portions of the conductive feature. An Under-Bump-Metallurgy (UBM) is disposed over and in contact with a center portion of the conductive feature. A polymer contacts a sidewall of the substrate. A second dielectric pattern is disposed over and aligned to the polymer. The first and the second dielectric patterns are formed of a same dielectric material, and are disposed at substantially a same level.

Abstract: A laser device including a laser crystal, a first lens, an induced light source, a third light source and a second lens and a method for generating a laser light are disclosed. The laser crystal includes a gain medium, a first cross section and a second cross section. The first lens is located on the first cross section of the laser crystal. The induced light source is adapted to generate an induced light entering into the laser crystal through the first lens. The third light source is adapted to generate a third light which is adapted for emitting the laser crystal. The third light and the induced light are adapted to induce the liquid crystal to make the liquid crystal generate a first light and a second light.